US20020071169A1 - Micro-electro-mechanical-system (MEMS) mirror device - Google Patents
Micro-electro-mechanical-system (MEMS) mirror device Download PDFInfo
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- US20020071169A1 US20020071169A1 US09/497,270 US49727000A US2002071169A1 US 20020071169 A1 US20020071169 A1 US 20020071169A1 US 49727000 A US49727000 A US 49727000A US 2002071169 A1 US2002071169 A1 US 2002071169A1
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/004—Angular deflection
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/042—Micromirrors, not used as optical switches
Definitions
- the present invention pertains to the field of micro-electro-mechanical-system (MEMS) devices. More particularly, the present invention relates to a MEMS mirror devices and methods for fabricating the same.
- MEMS micro-electro-mechanical-system
- a MEMS device is a micro-sized mechanical structure having electrical circuitry fabricated using conventional integrated circuit (IC) fabrication methods.
- a well-known MEMS device is a microscopic gimbaled mirror mounted on a substrate.
- a gimbaled mirror is a device that may pivot on a hinge about an axis. By pivoting about an axis, a gimbaled mirror can redirect light beams to varying positions.
- MEMS gimbaled mirrors are arranged in an array on single silicon wafer substrate.
- a prior process for fabricating MEMS gimbaled mirrors on a substrate is a surface micro-machining process.
- a surface micro-machining process utilizes thin layers to mount the MEMS mirrors off the substrate.
- a disadvantage with using the micro-machining process is that the gimbaled mirrors are mounted by only at a few ⁇ m (“micro-meters”) off the substrate. At such a small height, the gimbaled mirror is inhibited from pivoting at large angles with respect to an axis thereby limiting the number of positions for redirecting light.
- the stress curling method applies a stress gradient on a thin cantilever layer.
- the stress gradient causes the end of the cantilever layer to curl that is used to lift a gimbaled mirror off the substrate.
- a disadvantage with using the stress curling method is that it is process dependent and it is difficult to control the stress gradient.
- Another disadvantage with the stress curling method is that cantilever layer requires a large area on the substrate that reduces the number of gimbaled mirrors that can be arranged on the substrate.
- a scratch motor uses electrostatic force to move a mass that raises a gimbaled mirror off the substrate by rotating the mass around a hinge.
- a disadvantage with using scratch motors and hinges is that it requires a large area of space on the substrate to make the scratch motors and hinges thereby limiting the number of gimbaled mirrors to be arranged on the substrate. Furthermore, scratch motors are difficult to make at a microscopic level.
- a micro-electro-mechanical-system (MEMS) mirror device includes a substrate. Electrodes are formed supported by the substrate. A support structure is formed adjacent to the electrodes. A hinge pattern and a mirror pattern having a center mirror component are formed such that support structure supports the hinge pattern and mirror pattern. The support structure also supports the hinge pattern and mirror pattern such that a bottom surface of the center mirror component in a stationary non-rotating position is capable of exceeding a height of 50 ⁇ m above the electrodes.
- MEMS micro-electro-mechanical-system
- a MEMS mirror device fabrication method is disclosed.
- a substrate is exposed selectively to form exposed regions and unexposed regions in the substrate. Electrodes are formed supported by the substrate.
- a mirror pattern having a center mirror component and a hinge pattern are formed supported by the substrate. Portions of the substrate are removed in the exposed regions to form a support structure from the unexposed regions such that the support structure supports the mirror pattern and hinge pattern.
- a release layer is formed on a first substrate.
- a mirror pattern having a center mirror component and a hinge pattern are formed supported by the release layer.
- Electrodes are formed supported by a second substrate.
- a support structure is formed. The first substrate is attached with the second substrate using the support structure. The first substrate and the release layer are removed such that the support structure supports the mirror pattern and hinge pattern.
- a release layer is formed on a first substrate.
- a mirror pattern having a center mirror component and a hinge pattern are formed supported by the release layer.
- Electrodes are formed supported by a second substrate.
- a support structure is formed using a third substrate. The first substrate is attached with the second substrate using the support structure. The first substrate and release layer are removed.
- Electrodes are formed supported by a first substrate. Portions of a second substrate on a bottom side are removed selectively. Portions of the second substrate on a topside are removed selectively to form a mirror, frame pattern, and hinge pattern. The first substrate is attached with the second substrate.
- FIG. 1 is a top view of a MEMS mirror device according to one embodiment without electrodes and a wiring pattern
- FIG. 2 is a top view of a MEMS mirror device according to one embodiment illustrating electrodes and a wiring pattern
- FIG. 3 is a cross-sectional side view of one embodiment along the line A-A′ such as that shown in FIG. 2;
- FIGS. 4 a through 4 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a first embodiment
- FIGS. 5 a through 5 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a second embodiment
- FIGS. 6 a through 6 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a third embodiment
- FIG. 7 a is a top view of a MEMS mirror device according to another embodiment without electrodes and a wiring pattern
- FIG. 7 b is an illustration showing the cross-sectional side views along the lines B-B′, C-C′, D-D′, and E-E′ such as that shown in FIG. 7 a to show the thickness and width for the hinge pattern, frame pattern, mirror, and support structure;
- FIGS. 8 a - 8 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a fourth embodiment.
- a micro-electro-mechanical-system (MEMS) mirror device that includes a substrate. Electrodes are formed supported by the substrate. A support structure is formed adjacent to the electrodes. A hinge pattern is formed on the support structure. A hinge pattern and a mirror pattern having a center mirror component are formed such that support structure supports the hinge pattern and mirror pattern. The support structure also supports the hinge pattern and mirror pattern such that a bottom surface of the center mirror component in a stationary non-rotating position is capable of exceeding a height of 50 ⁇ m above the electrodes. For example, the support structure may support the hinge pattern and mirror pattern such that the bottom surface of the center mirror component in a stationary non-rotating position has a height of about 100 ⁇ m above the electrodes.
- MEMS micro-electro-mechanical-system
- the center mirror component may have a larger angular range of motion that can pivot about an axis.
- the center mirror component is capable of having an angular range of motion exceeding 20 degrees with respect to an axis. Because the center mirror component may have such a large range of angular motion, the center mirror component may redirect light beams at a larger number of positions.
- such a MEMS mirror device having a large angular motion can provide increased flexibility for optical switching systems, scanning systems, printing systems, and display systems that require redirecting beams of light.
- the methods for fabricating a MEMS mirror device as described herein allow for a large number of mirror devices to be arranged on a single substrate.
- the methods for fabricating a MEMS mirror device also allow the center mirror component to be at a desired height above the electrodes or substrate dictated simply by a thickness of a substrate or a thickness of a formed support structure.
- a MEMS mirror device fabrication method exposes selectively a substrate to form exposed regions and unexposed regions. Electrodes are formed supported by the substrate. A mirror pattern having a center mirror component and a hinge pattern are formed supported by the substrate. Portions of the substrate are removed in the exposed regions to form a support structure from the unexposed regions such that the support structure supports the mirror pattern and hinge pattern.
- a single substrate is used to fabricate a MEMS mirror device.
- the single substrate is used to form the electrodes, mirror pattern, hinge pattern, and support structure.
- the height at which a center mirror component is above the electrodes is dictated by the thickness of the substrate.
- a MEMS mirror device fabrication method forms a release layer on a first substrate.
- a mirror pattern having a center mirror component and a hinge pattern are formed supported by the release layer.
- Electrodes are formed supported by a second substrate.
- a support structure is formed. The first substrate and the second substrate are attached using the support structure. The first substrate and the release layer are removed such that the support structure supports the mirror pattern and hinge pattern.
- two substrates are used to fabricate a MEMS mirror device.
- the height at which the center mirror component is above the electrodes is dictated by a thickness of the formed support structure.
- a thickness of the formed support structure is formed.
- the thickness of the support structure formed dictates the height at which a center component is above the electrodes.
- a MEMS mirror device fabrication method forms a release layer on a first substrate.
- a mirror pattern having a center mirror component and a hinge pattern are formed supported by the release layer.
- Electrodes are formed supported by a second substrate.
- a support structure is formed using a third substrate. The first substrate is attached with the second substrate using the support structure. The first substrate and release layer are removed.
- three substrates are used to fabricate a MEMS mirror device.
- a first substrate is used to form the hinge pattern and mirror pattern.
- a second substrate is used to form the electrodes.
- a third substrate is used to form the support structure.
- the thickness of the third substrate used dictates the thickness of the support structure.
- the height at which the center mirror component is above the electrodes is simply dictated by the thickness of the third substrate.
- a thicker third substrate is simply used.
- a MEMS mirror device fabrication method forms electrodes supported by a first substrate. Portions of a second substrate are removed selectively on a bottom side. Portions of the second substrate are removed selectively on a topside to form a mirror pattern, frame pattern, hinge pattern, and support structure. The first substrate is attached with the second substrate.
- the fourth embodiment two substrates are used to fabricate a MEMS mirror device.
- the height at which the center mirror component is above the electrodes is dictated by the thickness of the second substrate used.
- the mirror pattern, frame pattern, hinge pattern, and support structure can be formed from a single substrate.
- a layer can be selectively patterned on a substrate using any combination of a photolithography and dry or wet etching process or a liftoff process.
- a liftoff process involves depositing a photosensitive film over a substrate that is then exposed and developed to pattern the photosensitive film. Material is then deposited over the entire surface the substrate and on the patterned photosensitive film. After the material is deposited over the substrate and on the patterned photosensitive film, the patterned photosensitive film is dissolved and any material formed thereon is removed. As a result of this process, the material deposited is selectively patterned.
- a layer may also be removed or released by using oxygen plasma that reacts with the layer to release or remove the layer from an attached material.
- FIG. 1 is top view of one embodiment of a MEMS mirror device without electrodes and a wiring pattern illustrating a first mirror device 9 A and a second mirror device 9 B having a support structure 5 , hinge pattern 6 , and mirror pattern 7 .
- Mirror pattern 7 may include a center mirror component 7 a , frame pattern 7 b , and mirror component 7 c .
- Center mirror component 7 a is capable of having an angular range of motion with respect to an axis.
- Frame pattern 7 b provides support for center mirror component 7 a .
- Mirror component 7 c may be used for alignment or bonding purposes. Alternatively, mirror component 7 c may be omitted from mirror pattern 7 .
- FIG. 2 is a complete top view of one embodiment of a MEMS mirror device such as that shown in FIG. 1 further illustrating electrodes 4 and wiring pattern 2 for the first mirror device 9 A and second mirror device 9 B.
- FIG. 3 is a cross sectional side view showing the structure of one embodiment of a MEMS mirror device taken along the line A-A′ such as that shown in FIG. 2.
- a MEMS mirror device includes a substrate 1 having wiring pattern 2 formed thereon. Electrodes 4 are formed such that electrodes are coupled with wiring pattern 2 . An insulation layer 3 is formed to provide insulation for wiring pattern 2 and electrodes 4 .
- Support structure 5 is formed on insulation layer 3 adjacent from electrodes 4 .
- Support structure 5 may include a post structure to provide support for layers formed thereon or attached therewith.
- Support structure 5 may define a honeycombed shape.
- Support structure 5 may also define holes such that the holes are centered approximately below the center mirror component.
- Support structure 5 provides support for hinge pattern 6 and mirror pattern 7 .
- Mirror pattern 7 includes a center mirror component 7 a , frame pattern 7 b , and mirror component 7 c .
- mirror pattern may include center mirror component 7 a and frame pattern 7 b .
- Hinge pattern 6 is attached with mirror pattern 7 and support structure 5 .
- Hinge pattern 6 may be a thin and flexible material.
- Hinge pattern 6 provides support for mirror pattern 7 .
- Frame pattern 7 b provides support for center mirror component 7 a .
- Mirror component 7 c is supported by hinge pattern 6 and may be used for alignment or bonding purposes. Alternatively, mirror component 7 c may be omitted from mirror pattern 7 .
- the center mirror component 7 a is formed such that it is disposed above electrodes 4 .
- Center mirror component 7 a includes a reflective surface to reflect beams of light.
- Electrodes 4 are located below at opposing edges of center mirror component 7 a .
- Center mirror component 7 a may also be connected with a ground line (not shown) in substrate 1 for electrical shielding purposes.
- Electrodes 4 are coupled with a respective wiring pattern 2 located on substrate 1 .
- a ground line may be disposed between electrodes 4 and wiring pattern 2 for purposes of electrical shielding.
- Center mirror component 7 a may move about an axis to have an angular range of motion caused by electrostatic actuation from electrodes 4 .
- Electrostatic actuation is caused by a voltage being applied to electrodes 4 through wiring pattern 2 .
- a voltage applied to electrodes 4 creates an electric field between, for example, electrodes 4 and center mirror component 7 a .
- the electric field is created near the edges of center mirror component 7 a .
- the electric field causes center mirror component 7 a to have an angular range of motion with respect to an axis such as, for example, an axis parallel to hinge pattern 7 .
- the edges of center mirror component 7 a towards electrodes 4 at which the voltage is applied moves towards such electrodes 4 .
- center mirror component 7 a By increasing the angular range of motion for center mirror component 7 a , center mirror component 7 a can redirect beams of light to a larger number of positions thereby increasing flexibility for optical switching.
- Increasing the thickness for support structure 5 can increases the angular range of motion for center mirror component 7 a .
- Support structure 5 having an increased thickness provides a larger height for center mirror component 7 a to be off of substrate 1 . Because center mirror component 7 a may have a large height off substrate 1 , center mirror component 7 a is provided with a larger angular range of motion.
- the support structure can be fabricated to support the hinge pattern and mirror pattern such that a bottom surface of the center mirror component in a stationary non-rotating position is capable of exceeding a height of 50 ⁇ m above the electrodes.
- the support structure may support the hinge pattern and mirror pattern such that the bottom surface of the center mirror component in a stationary non-rotating position is capable of having a height about 100 ⁇ m above the electrodes.
- the following embodiments provide a center mirror component that is capable of having an angular range of motion exceeding 20 degrees with respect to an axis.
- FIGS. 4 a through 4 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a first embodiment.
- substrate 10 is exposed selectively on a first side to form exposed regions 11 a and unexposed regions 11 b in substrate 10 .
- a honeycombed mask may be used to expose selectively substrate 10 .
- other masks may be used to form exposed regions on a substrate such that mirror components are centered approximately over the exposed regions.
- the first side is a topside of substrate 10 .
- Substrate 10 is a substrate that can be etched more rapidly in the exposed regions than in the unexposed regions.
- substrate 10 may be a photosensitive glass substrate that can be exposed selectively and etched more rapidly in the exposed regions than in the unexposed regions. After being exposed selectively, substrate 10 may be polished to retain planarity and remove any materials that may have formed on substrate 10 during this process.
- a first metal layer is formed on a second side of substrate 10 and is selectively patterned and etched to form electrodes 14 .
- the second side is a bottom side of substrate 10 .
- the first metal layer may be a metallic layer such as, for example, an aluminum Al layer.
- an oxide layer is then formed over electrodes 14 and substrate 10 on the bottom side and selectively patterned to form insulation layer 13 , such that insulation layer 13 exposes portions of electrodes 14 .
- dielectric layers may be used such as, for example, silicon dioxide SiO 2 layer, silicon nitride Si x N y layer, or silicon oxynitride Si x O y N z layer, that can be selectively patterned and etched to form insulation layer 13 .
- a second metal layer is formed on insulation layer 13 and on exposed portions of electrodes 14 and is selectively patterned and etched to form wiring pattern 12 .
- the second metal layer may also be a metallic layer such as, for example, an Al layer.
- Wiring pattern 12 is formed such that it is coupled with electrodes 14 .
- Insulation layer 13 provides insulation for wiring pattern 12 and electrodes 14 .
- a polysilicon layer is formed on the topside of substrate 10 .
- the polysilicon layer is selectively patterned and etched to form hinge pattern 16 .
- a polymer layer, oxide layer, nitride layer, silicon nitride Si x N y layer, silicon dioxide SiO 2 , layer, or silicon oxynitride Si x O y N z layer may be used that is selectively patterned and etched to form hinge pattern 16 .
- Hinge pattern 16 is formed to be thin and flexible. Hinge pattern 16 is also formed such that portions of substrate 11 are exposed above an area near electrodes 14 .
- At least one layer having light reflective properties is formed on hinge pattern 16 and on the exposed portions of the topside of substrate 11 .
- a metal layer having light reflective properties may be formed on hinge pattern 16 and portions of the exposed substrate 11 and selectively pattern and etched to form mirror pattern 17 .
- the metal layer may be a gold Au metal layer, aluminum Al metal layer, or a copper Cu metal layer.
- Mirror pattern 17 includes a center mirror component 17 a , frame pattern 17 b , and mirror component 17 c .
- Frame pattern 17 b is supported by hinge pattern 16 .
- Frame pattern 17 b provides support for center mirror component 17 a .
- Mirror component 17 c is supported by hinge pattern 16 .
- mirror component 17 c may be omitted from mirror pattern 17 .
- mirror pattern 17 Multiple layers may also be used to form mirror pattern 17 .
- a first metal layer is formed on hinge pattern 17 and on portions of the exposed substrate 11 .
- a support layer is formed on the first metal layer.
- a second metal layer is formed on the support layer. The three layers are selectively patterned and etched to form mirror pattern 17 .
- the first and second metal layers are layers having light reflective properties.
- a gold Au metal layer, an aluminum Al metal layer, or a copper Cu metal layer may be used for the first and second metal layers.
- the support layer is a layer that provides a flat surface and structural support.
- a silicon dioxide SiO 2 layer, silicon nitride Si x N y layer, polysilicon layer, silicon oxynitride Si x O y N z layer, or a polymer layer may be used for the support layer.
- the support layer may include the same material as the first and second metal layers.
- a polymer layer is formed over mirror pattern 17 and hinge pattern 16 and is patterned selectively and etched to form protection layer 18 .
- a polysilicon layer, oxide layer, or nitride layer may be used to form protection layer 18 .
- Protection layer 18 is patterned to protect mirror pattern 17 and hinge pattern 16 .
- Protection layer 18 is also patterned such that an etching solution can reach substrate 11 .
- a hydrofluoric (HF) acid etching solution is used to etch substrate 11 .
- forming protection layer 18 may be optional if mirror pattern 17 and hinge pattern 16 are resistant to the etching solution. If, for example, HF acid is used and hinge pattern 16 is made from an oxide material, which etches easily in HF acid, protection layer 18 (not made of an oxide) is then required.
- the etching solution is deposited over substrate 11 to etch substrate 11 .
- HF acid is used that etches away the exposed regions 11 a more rapidly than the unexposed regions 11 b such that remaining portions of the unexposed regions 11 b of substrate 11 form support structure 15 .
- a protection layer is used, then the protection layer is removed using an oxygen plasma, wet, or dry etch process.
- the thusly-fabricated MEMS mirror device serves to provide a support structure using a single substrate.
- the single substrate is a photosensitive substrate.
- the photosensitive substrate is a photosensitive glass substrate that is exposed selectively. Because the photosensitive substrate is exposed selectively, the photosensitive substrate can be etched to form the support structure after forming the hinge pattern and mirror pattern. Thus, mounting a mirror pattern and a hinge pattern on a support structure is avoided. Furthermore, the thickness of the photosensitive substrate dictates the height at which a center mirror component is above the electrodes.
- FIGS. 5 a through 5 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a second embodiment.
- a polymer layer is formed on a first substrate 20 to form a release layer 21 .
- Release layer 21 may also be a layer that can be etched easily away or is removed easily from first substrate 20 .
- release layer 21 may be a polysilicon layer, oxide layer, or a nitride layer.
- First substrate 20 may be a silicon substrate, glass substrate, or a borosilicate glass substrate.
- At least one layer having light reflective properties is formed on release layer 21 .
- a metal layer having light reflective properties may be formed on release layer and selectively pattern and etched to form mirror pattern 27 .
- the metal layer may be a gold Au metal layer, aluminum Al metal layer, or a copper Cu metal layer.
- Mirror pattern 27 includes a center mirror component 27 a , frame pattern 27 b , and mirror component 27 c formed on release layer 21 .
- mirror component 27 c may be omitted from mirror pattern 27 .
- mirror pattern 27 Multiple layers may also be used to form mirror pattern 27 .
- a first metal layer is formed on release layer 21 .
- a support layer is formed on the first metal layer.
- a second metal layer is formed on the support layer. The three layers are selectively patterned and etched to form mirror pattern 27 .
- the first and second metal layers are layers having light reflective properties.
- a gold Au metal layer, an aluminum Al metal layer, or a copper Cu metal layer may be used for the first and second metal layers.
- the support layer is a layer that provides a flat surface and structural support.
- a silicon dioxide SiO 2 layer, silicon nitride Si x N y layer, polysilicon layer, silicon oxynitride Si x O y N z layer, or a polymer layer may be used for the support layer.
- the support layer may include the same material as the first and second metal layers.
- a polysilicon layer is formed over mirror pattern 27 and is selectively patterned and etched to form hinge pattern 26 .
- a polymer layer, oxide layer, nitride layer, silicon nitride Si x N y layer, silicon dioxide SiO 2 , layer, or silicon oxynitride Si x O y N z layer may be used that is selectively patterned and etched to form hinge pattern 26 .
- Hinge pattern 26 is formed on portions of mirror pattern 27 .
- Hinge pattern 26 is not formed on center mirror component 27 a .
- Hinge pattern 26 is formed to be thin and flexible.
- a first metal layer is formed on a second substrate 30 and is selectively patterned and etched to form wiring pattern 32 .
- Second substrate 30 may be may be a silicon substrate, glass substrate, or borosilicate glass substrate.
- the first metal layer may be a metallic layer such as, for example, an aluminum Al layer.
- an oxide layer is then formed over wiring pattern 32 and second substrate 30 and is selectively patterned and etched to form insulation layer 33 . Insulation 33 is formed such that portions of wiring pattern 32 are exposed.
- dielectric layers may be used such as, for example, silicon dioxide SiO 2 layer, silicon nitride Si x N y layer, or silicon oxynitride Si x O y N z layer, that can be selectively patterned and etched to form insulation layer 33 .
- a second metal layer is formed over insulation layer 33 and wiring pattern 32 and is selectively patterned and etched to form electrodes 34 .
- the second metal layer may also be a metallic layer such as, for example, an Al layer.
- Electrodes 34 are formed such that they are coupled with wiring pattern 32 .
- Insulation 33 provides insulation for wiring pattern 32 and electrodes 34 .
- a thick patterned film is used to form support structure 35 .
- a metal plating process is used with the thick patterned film to form support structure 35 .
- an electroless metal deposition process may be used to form support structure 25 .
- a thick photo resist film is formed on insulation layer 33 and selectively patterned to allow support structure 35 to be formed therein on insulation layer 33 .
- a thick photo resist film may be formed on hinge pattern 26 and selectively patterned to allow support structure 35 to be formed on hinge pattern 26 .
- an aqueous solution having nickel Ni is deposited over the patterned photo resist film such that nickel Ni is formed in the patterned thick photo resist film. After Ni is formed, the remaining photo resist film is removed to form support structure 35 made of Ni. Alternatively, an aqueous solution having copper Cu or gold Au may be used to form support structure 35 using the electroless metal deposition process. The remaining photo resist film is then removed.
- an electroplating process or a metal sputtering process may be used.
- a thick photo resist film is formed on insulation layer 33 and selectively patterned to allow support structure 35 to be formed therein on insulation layer 33 .
- a thick photo resist film is formed on hinge pattern 26 and selectively patterned to allow support structure 35 to be formed therein on hinge pattern 26 .
- an electroplating solution having nickel Ni is deposited over the patterned photo resist film and an electric current is passed through the solution such that Ni is formed in the patterned thick photo resist film.
- the remaining photo resist film is removed to form support structure 35 made of Ni.
- an electroplating solution having copper Cu or gold Au may be used to form support structure 35 using the electroplating process.
- a thin conductive layer (not shown) may be formed selectively on insulation layer 33 or hinge pattern 26 to assist in the electroplating process. The photo resist film is then removed.
- a thick photo resist film is formed on insulation layer 33 and selectively patterned to allow support structure 35 to be formed therein on insulation layer 33 .
- a thick photo resist film is formed on hinge pattern 26 and selectively patterned to allow support structure 35 to be formed therein on hinge pattern 26 .
- metal is sputtered on the patterned thick photo resist film such that the metal is formed therein.
- metal is sputtered on the patterned thick photo resist film such that metal is formed therein.
- nickel Ni, copper Cu, or gold Au may be sputtered on the patterned thick photo resist film such that metal is formed therein.
- the remaining patterned thick photo resist film and metal formed thereon are removed to form support structure 35 .
- the thick photo resist film is then removed.
- first substrate 20 is attached with second substrate 30 . If support structure 35 is formed on insulation layer 33 , first substrate 20 may be attached with second substrate 30 by flipping first substrate 20 and bonding hinge pattern 26 with a top side of support structure 35 . Alternatively, if support structure 35 is formed on hinge pattern 26 , first substrate 20 may be attached with second substrate 30 by flipping first substrate 20 and bonding support structure 35 with insulation layer 33 .
- Support structure 35 can be bonded to insulation layer 33 or hinge pattern 26 using a soldering bond technique that forms a bonding layer.
- a bonding layer 38 may be formed to bond support structure 35 with hinge pattern 26 .
- a bonding layer may be formed near insulation layer 33 to bond support structure 35 with hinge pattern 26 .
- the bonding layer may include a lead-tin PbSn mixture.
- a thin metal layer may be formed on hinge pattern 26 or insulation layer 33 to assist in the bonding process.
- first substrate 20 and release layer 21 are removed such that support structure 35 supports hinge pattern 26 .
- Hinge pattern 26 supports mirror pattern 27 .
- First substrate 20 may be removed using an etching or polishing process.
- first substrate 20 may be etched away using hydro-fluoric (HF) acid or first substrate 20 may be polished away.
- Release layer 21 may be removed using oxygen plasma, wet etch, or a dry etch process.
- the thusly fabricated MEMS mirror device serves to provide a support structure using a thick film process.
- the thickness of the thick photo resist film used dictates the thickness of support structure 35 .
- the thickness of support structure 35 dictates the height in which a center mirror component is above the electrodes that determines angular range of motion for the center mirror component.
- FIGS. 6 a through 6 e are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a third embodiment.
- the fabrication steps illustrated by FIG. 6 a to form release layer 41 , mirror pattern 47 , and hinge pattern 46 are identical to the fabrication steps illustrated by FIGS. 5 a and 5 b for a first substrate 40 and accordingly descriptions to FIG. 6 a will be omitted.
- the fabrication steps illustrated by FIG. 6 b to form wiring pattern 52 , electrodes 54 , and insulation layer 53 using a second substrate 50 are identical to the fabrication steps illustrated by FIG. 5 c and accordingly descriptions to FIG. 6 b will be omitted.
- a third substrate 60 is used to form support structure 65 .
- Third substrate 60 may be etched selectively to form support structure 65 .
- Third substrate may be a silicon substrate, glass substrate, or a borosilicate glass substrate.
- Third substrate 60 may be etched selectively in areas 61 a of third substrate 60 using a reactive ion etching (RIE) process.
- RIE reactive ion etching
- the RIE etching process forms deep holes in third substrate 60 such that areas 61 b of third substrate 60 remain to form support structure 65 .
- deep holes may be formed in third substrate 60 using a wet etch or a laser ablation process such that areas 61 a are removed from third substrate 60 .
- Third substrate 60 may also be a photosensitive substrate that is exposed selectively to form exposed regions 61 a and unexposed regions 61 b in third substrate 60 .
- Third substrate 60 is a substrate that can be etched more rapidly in the exposed regions than in the unexposed regions. After being exposed selectively, third substrate 60 may be polished to retain planarity and remove any materials that may have formed on third substrate 60 during this process.
- an etching solution is used to etch third substrate 60 .
- HF acid etching solution is deposited selectively over third substrate 60 to etch third substrate 60 .
- the HF acid etches away the exposed regions 61 a more rapidly than the unexposed regions 61 b such that the remaining portions of the unexposed regions 61 b of third substrate 60 form support structure 65 .
- Support structure 65 may define a honeycombed shape or define holes approximately centered with respect to center mirror components.
- first substrate 40 is attached with second substrate 50 using support structure 65 .
- support structure 65 is bonded with insulation layer 53 using a solder bond process thus forming a bonding layer 69 .
- hinge pattern 46 is bonded with support structure 65 using a solder bond process thus forming a bonding layer 68 .
- support structure 65 is bonded with hinge pattern 46 using a solder bond process thus forming a bonding layer 68 .
- insulation layer is bonded with support structure 65 thus forming bonding layer 69 .
- Bonding layers 68 and 69 may include a lead-tin PbSn mixture.
- a thin metal layer may also be formed on insulation layer 53 and hinge pattern 46 to assist in the bonding process.
- first substrate 40 is attached with second substrate 50 using support structure 65 .
- First substrate 40 and release layer 41 are removed such that support structure 65 supports hinge pattern 46 .
- Hinge pattern 46 supports mirror pattern 47 .
- First substrate 40 may be removed using an etching or polishing process. For example, first substrate 40 may be etched away using HF acid or first substrate 40 may be polished away. Release layer may be removed using an oxygen plasma, wet etch, or a dry etch process.
- the thusly fabricated MEMS mirror device uses three substrates.
- One substrate is used to form mirror pattern 47 and hinge pattern 46 .
- a second substrate is used to form electrodes 54
- a third substrate 50 is used to form a support structure 65 .
- the height at which the center mirror component is above the electrodes is simply dictated by the thickness of the third substrate used. Thus, to increase the height of the center mirror component above the electrodes, a thicker substrate may be used.
- FIG. 7 a is a top view of a MEMS mirror device according to another embodiment without electrodes and a wiring pattern.
- FIG. 7 a shows a first mirror device 101 a and a second mirror device 101 b having a support structure 95 , hinge pattern 96 , frame pattern 97 , and mirror 97 a.
- Support structure 95 , hinge pattern 96 , frame pattern 97 , and mirror 97 a are all formed from a single substrate.
- Hinge pattern 96 provides support for frame 97 b and mirror 97 a .
- Frame 97 b provides support for mirror 97 a .
- Support structure 95 provides support for hinge pattern 96 , frame pattern 97 b , and mirror 97 a .
- Mirror 97 a is capable of having an angular range of motion with respect to an axis.
- FIG. 7 b is an illustration showing the cross-sectional side views along the lines B-B′, C-C′, D-D′, and E-E′ such as that shown in FIG. 7 a to show the different thickness and width for the hinge pattern 96 , frame pattern 97 b , mirror 97 a , and support structure 95 , respectively, for first mirror 101 a and second mirror 101 b .
- hinge pattern 96 is formed to have a smaller thickness than frame pattern 97 b and mirror 97 a .
- hinge pattern 96 may be formed to have the same thickness as frame pattern 97 b and mirror 97 a .
- Frame pattern 97 b and mirror 97 a are formed to have the same thickness.
- FIGS. 8 a - 8 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to the fourth embodiment.
- FIG. 8 a illustrates the processing steps to form a wiring pattern, electrodes, insulation layer using a first substrate.
- the fabrication steps illustrated by FIG. 8 a to form wiring pattern 82 , electrodes 84 , insulation layer 83 using a first substrate 80 are identical to the fabrication steps illustrated by FIGS. 5 c and 6 b and accordingly descriptions to FIG. 8 a will be omitted.
- FIGS. 8 b , 8 c , and 8 d illustrate the processing steps to form the hinge pattern, frame pattern, mirror, and support structure individually from a single substrate such as that shown in FIG. 7 b .
- the processing steps are illustrated along the lines B-B′, C-C′, D-D′, E-E′ such as that shown in FIG. 7 a for mirror device 101 a and mirror device 101 b.
- a second substrate 90 is etched selectively on a first side to remove large portions of second substrate 90 to define open areas (“windows”) 100 such that the open areas 100 are located below where hinge pattern 96 , mirror 97 a , and frame pattern 97 b will be formed.
- the first side of second substrate 90 refers to a bottom side of second substrate 90 .
- a silicon etching process is used to etch selectively the bottom side of second substrate 90 .
- RIE reactive ion etching
- a wet etch or a laser ablation process may be used to etch the bottom side of second substrate 90 to form open areas 100 .
- An oxide layer is deposited on a second side of second substrate 90 to form a mask layer 91 .
- a polymer layer, silicon nitride Si x N y layer, silicon oxynitride Si x O y N z layer, or a metal layer may be used to form mask layer 91 .
- Mask layer 91 may also be formed prior to forming open areas 100 .
- the second side refers to the topside of second substrate 90 .
- Mask layer 91 is patterned to define hinge pattern 96 , frame pattern 97 b , mirror 97 a , and support structure 95 from second substrate 90 .
- FIGS. 8 c and 8 d illustrate the processing steps for forming hinge pattern 96 , frame pattern 97 b , mirror 97 a , and support structure 95 .
- the following process steps describe forming hinge pattern 96 such that it has a smaller thickness than frame pattern 97 b and mirror 97 a .
- the following processing steps may be modified to form hinge pattern 96 having the same thickness as frame pattern 97 b and mirror 97 a.
- mask layer 91 is patterned selectively on second substrate 90 to expose portions of second substrate 90 .
- the patterned mask layer 91 defines hinge pattern 96 , frame pattern 97 b , mirror 97 a , and support structure 95 .
- the exposed portions of second substrate 90 are etched using a silicon etching process.
- a RIE etching process may be used to etch exposed portions of second substrate 90 to a first depth such that a thin portion (“floor”) of second substrate 90 remains above open areas 100 .
- a wet etch or a laser ablation process may be used to etch the exposed portions of second substrate 90 to the first depth.
- an oxide layer is deposited over second substrate 90 and etched selectively to form sidewalls 94 .
- a polymer layer, silicon nitride Si x N y layer, silicon oxynitride Si x O y N z layer, or a metal layer may be used to form sidewalls 94 .
- Sidewalls 94 provide protection to selective portions of the topside of second substrate 90 that define hinge pattern 96 , frame pattern 97 b , mirror 97 a , and support structure 95 . Layers that have formed on the floor in making sidewalls 94 are the etched to expose the floor.
- exposed portions of the floor of second substrate 90 are etched using a silicon etching processes.
- a silicon etching process may be used to etch exposed portions of the floor such that the floor falls below the sidewalls.
- a wet etch process or a laser ablation process may be used to etch the exposed portions of the floor to fall below the sidewalls.
- a release process is performed to form hinge pattern 96 , frame pattern 97 b , and mirror 97 a .
- the release process is an etching process that undercuts selectively the exposed portions of topside of second substrate 90 that defines hinge pattern 96 , frame pattern 97 b , and mirror 97 a underneath sidewalls 94 such that the floor is separated. If hinge pattern 96 is to have the same thickness as frame pattern 97 b and mirror 97 a , hinge pattern 96 , frame 97 b , and mirror 97 a are released at the same time. Alternatively, if hinge pattern 96 is to have a smaller thickness than frame pattern 97 b and mirror 97 a , frame pattern 97 b and mirror 97 a are released after hinge pattern 96 at a lower depth.
- the following step describes the release process. To release frame pattern 97 b and mirror 97 a at a larger depth than hinge pattern 96 , the above steps are repeated such that exposed portions of the topside of second substrate 90 that define frame pattern 97 b and mirror 97 a underneath sidewalls 94 fall below hinge pattern 96 .
- a RIE etching process may be used to release the exposed portions of the topside of second substrate that defines hinge pattern 96 , frame pattern 97 b , and mirror 97 a underneath sidewalls 94 to form hinge pattern 96 , frame pattern 97 b , and mirror 97 a from second substrate 90 .
- a time controlled profile etching process may be used to release hinge pattern 96 , frame pattern 97 b , and mirror 97 a from second substrate 96 .
- the release process may undercut frame pattern 97 b and mirror 97 a underneath sidewalls 94 such that non-straight edge surfaces are formed.
- the release process may undercut hinge pattern 96 such that non-straight edge surfaces are also formed.
- Hinge pattern 96 , frame pattern 97 b , and mirror 97 a are thus formed after it has been released from second substrate 90 , and the remaining mask layer 91 and sidewalls 94 are removed.
- mask layer 91 and sidewalls 94 may remain in forming the MEMS mirror device.
- the next step in the process is to remove the floor (“clear the floor”).
- the floor is etched away to clear the floor such that hinge pattern 96 , frame pattern 97 b , and mirror 97 a are suspended about support structure 95 and second substrate 90 .
- the floor of second substrate 90 may be etched away using an RIE etching process.
- a wet etch or a laser ablation process may be used to etch the exposed portions of the floor to clear the floor.
- Second substrate 90 may also be flipped and the floor may be cleared from the back side using the same etching processes.
- support structure 95 is thusly formed.
- support structure 95 , hinge pattern 96 , frame pattern 97 b , and mirror 97 a are illustrated with straight surfaces, but may have non-straight edge surfaces.
- FIG. 8 e is a cross-sectional side of the thusly formed hinge pattern 96 , frame pattern 97 b , mirror 97 a , and support structure 95 taken along the line A-A′ such as that shown in FIG. 7 a with showing electrodes.
- support structure 95 provides support for hinge pattern 96 , frame pattern 97 b , and mirror 97 a .
- Hinge pattern 96 b provides support for frame pattern 97 b .
- Frame pattern 97 b provides support for mirror 97 a.
- a reflective material 97 a ′ may then be formed on a top surface of mirror 97 a .
- Reflective material 97 a ′ provides a reflective surface for mirror 97 a , which is used to redirect beams of light.
- reflective material 97 a ′ may be formed on frame pattern 97 b and hinge pattern 96 .
- Reflective material 97 a ′ includes at least one layer.
- reflective material 97 a ′ may include a metal layer such as, for example, a gold Au metal layer, an aluminum metal layer, or a copper Cu metal layer.
- reflective material 97 a ′ may be formed after the processing steps as illustrated in FIG. 8 e or after first substrate 80 is attached with second substrate 90 .
- FIG. 8 f illustrate attaching first substrate 80 with second substrate 90 to form the MEMS mirror device according to the fourth embodiment.
- first substrate 80 is attached with second substrate 90 using support structure 95 .
- support structure 95 is bonded with insulation layer 83 using a solder bond process thus forming a bonding layer 98 .
- Bonding layer 98 may include a lead-tin PbSn mixture.
- a thin metal layer may also be formed on insulation layer 83 and a bottom side of support structure 95 to assist in the bonding process.
- the MEMS mirror device includes first substrate 80 , wiring pattern 82 , insulation layer 83 , and electrodes 84 .
- First substrate 80 , wiring pattern 82 , insulation layer 83 , and electrodes 84 are constructed and operate in a similar manner as substrate 1 , wiring pattern 2 , insulation layer 3 , and electrodes 4 , respectively, of FIG. 3.
- the MEMS mirror device also includes a support structure 95 , hinge pattern 96 , frame pattern 97 b , and mirror 97 a .
- Support structure 95 , hinge pattern 96 , frame pattern 97 b , and mirror 97 a are made from a second substrate, which is separate from first substrate 80 .
- the substrate to form support structure 95 , hinge pattern 96 , frame pattern 97 b , and mirror 97 a may be a single crystal silicon (SCS) substrate or a substrate in which deep holes may be formed.
- Support structure 95 , hinge pattern 96 , frame pattern 97 b , and mirror 97 a are formed as a single unit.
- Support structure 95 , mirror 97 a , frame pattern 97 b , and hinge pattern 96 operate in a similar manner as support structure 5 , center mirror component 7 a , frame pattern 7 b , and hinge pattern 6 , respectively, of FIG. 3.
- the thusly fabricated MEMS mirror device uses two substrates.
- One substrate is used to form electrodes 84 , wiring pattern 82 , and insulation layer 83 .
- a second substrate is used to form support structure 95 , mirror 97 a , hinge pattern 96 , and frame pattern 97 b .
- the height at which the mirror is above the electrodes is simply dictated by the thickness of the second substrate used.
- a thicker second substrate may be used.
- the mirror, frame pattern, and hinge pattern are formed without using thin film layering, which reduces the number of processing steps.
Abstract
Description
- The present invention pertains to the field of micro-electro-mechanical-system (MEMS) devices. More particularly, the present invention relates to a MEMS mirror devices and methods for fabricating the same.
- A MEMS device is a micro-sized mechanical structure having electrical circuitry fabricated using conventional integrated circuit (IC) fabrication methods. A well-known MEMS device is a microscopic gimbaled mirror mounted on a substrate. A gimbaled mirror is a device that may pivot on a hinge about an axis. By pivoting about an axis, a gimbaled mirror can redirect light beams to varying positions. Typically, MEMS gimbaled mirrors are arranged in an array on single silicon wafer substrate.
- A prior process for fabricating MEMS gimbaled mirrors on a substrate is a surface micro-machining process. A surface micro-machining process utilizes thin layers to mount the MEMS mirrors off the substrate. A disadvantage with using the micro-machining process is that the gimbaled mirrors are mounted by only at a few μm (“micro-meters”) off the substrate. At such a small height, the gimbaled mirror is inhibited from pivoting at large angles with respect to an axis thereby limiting the number of positions for redirecting light.
- One kind of micro-machining process to make gimbaled mirrors is the stress curling method. The stress curling method applies a stress gradient on a thin cantilever layer. The stress gradient causes the end of the cantilever layer to curl that is used to lift a gimbaled mirror off the substrate. A disadvantage with using the stress curling method is that it is process dependent and it is difficult to control the stress gradient. Another disadvantage with the stress curling method is that cantilever layer requires a large area on the substrate that reduces the number of gimbaled mirrors that can be arranged on the substrate.
- Another kind of micro-machining process to make gimbaled mirrors utilizes hinges and scratch motors. A scratch motor uses electrostatic force to move a mass that raises a gimbaled mirror off the substrate by rotating the mass around a hinge. A disadvantage with using scratch motors and hinges is that it requires a large area of space on the substrate to make the scratch motors and hinges thereby limiting the number of gimbaled mirrors to be arranged on the substrate. Furthermore, scratch motors are difficult to make at a microscopic level.
- A micro-electro-mechanical-system (MEMS) mirror device is disclosed. The MEMS mirror device includes a substrate. Electrodes are formed supported by the substrate. A support structure is formed adjacent to the electrodes. A hinge pattern and a mirror pattern having a center mirror component are formed such that support structure supports the hinge pattern and mirror pattern. The support structure also supports the hinge pattern and mirror pattern such that a bottom surface of the center mirror component in a stationary non-rotating position is capable of exceeding a height of 50 μm above the electrodes.
- A MEMS mirror device fabrication method is disclosed. A substrate is exposed selectively to form exposed regions and unexposed regions in the substrate. Electrodes are formed supported by the substrate. A mirror pattern having a center mirror component and a hinge pattern are formed supported by the substrate. Portions of the substrate are removed in the exposed regions to form a support structure from the unexposed regions such that the support structure supports the mirror pattern and hinge pattern.
- Another method for fabricating a MEMS mirror device is disclosed. A release layer is formed on a first substrate. A mirror pattern having a center mirror component and a hinge pattern are formed supported by the release layer. Electrodes are formed supported by a second substrate. A support structure is formed. The first substrate is attached with the second substrate using the support structure. The first substrate and the release layer are removed such that the support structure supports the mirror pattern and hinge pattern.
- Another method for fabricating a MEMS mirror device is disclosed. A release layer is formed on a first substrate. A mirror pattern having a center mirror component and a hinge pattern are formed supported by the release layer. Electrodes are formed supported by a second substrate. A support structure is formed using a third substrate. The first substrate is attached with the second substrate using the support structure. The first substrate and release layer are removed.
- Another method for fabricating a MEM gimbaled mirror device is disclosed. Electrodes are formed supported by a first substrate. Portions of a second substrate on a bottom side are removed selectively. Portions of the second substrate on a topside are removed selectively to form a mirror, frame pattern, and hinge pattern. The first substrate is attached with the second substrate.
- Other features and advantages of the present invention will be apparent from the accompanying drawings, and from the detailed description, which follows below.
- The present invention is illustrated by way of example and not limited in the figures of the accompanying drawings in which like references indicate similar elements and in which:
- FIG. 1 is a top view of a MEMS mirror device according to one embodiment without electrodes and a wiring pattern;
- FIG. 2 is a top view of a MEMS mirror device according to one embodiment illustrating electrodes and a wiring pattern;
- FIG. 3 is a cross-sectional side view of one embodiment along the line A-A′ such as that shown in FIG. 2;
- FIGS. 4a through 4 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a first embodiment;
- FIGS. 5a through 5 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a second embodiment;
- FIGS. 6a through 6 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a third embodiment;
- FIG. 7a is a top view of a MEMS mirror device according to another embodiment without electrodes and a wiring pattern;
- FIG. 7b is an illustration showing the cross-sectional side views along the lines B-B′, C-C′, D-D′, and E-E′ such as that shown in FIG. 7a to show the thickness and width for the hinge pattern, frame pattern, mirror, and support structure; and
- FIGS. 8a-8 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a fourth embodiment.
- A micro-electro-mechanical-system (MEMS) mirror device is described that includes a substrate. Electrodes are formed supported by the substrate. A support structure is formed adjacent to the electrodes. A hinge pattern is formed on the support structure. A hinge pattern and a mirror pattern having a center mirror component are formed such that support structure supports the hinge pattern and mirror pattern. The support structure also supports the hinge pattern and mirror pattern such that a bottom surface of the center mirror component in a stationary non-rotating position is capable of exceeding a height of 50 μm above the electrodes. For example, the support structure may support the hinge pattern and mirror pattern such that the bottom surface of the center mirror component in a stationary non-rotating position has a height of about 100 μm above the electrodes.
- By having a center mirror component capable of exceeding a height of 50 μm above the electrodes, the center mirror component may have a larger angular range of motion that can pivot about an axis. For example, the center mirror component is capable of having an angular range of motion exceeding 20 degrees with respect to an axis. Because the center mirror component may have such a large range of angular motion, the center mirror component may redirect light beams at a larger number of positions. Thus, such a MEMS mirror device having a large angular motion can provide increased flexibility for optical switching systems, scanning systems, printing systems, and display systems that require redirecting beams of light.
- The methods for fabricating a MEMS mirror device as described herein allow for a large number of mirror devices to be arranged on a single substrate. The methods for fabricating a MEMS mirror device also allow the center mirror component to be at a desired height above the electrodes or substrate dictated simply by a thickness of a substrate or a thickness of a formed support structure.
- For a first embodiment, a MEMS mirror device fabrication method exposes selectively a substrate to form exposed regions and unexposed regions. Electrodes are formed supported by the substrate. A mirror pattern having a center mirror component and a hinge pattern are formed supported by the substrate. Portions of the substrate are removed in the exposed regions to form a support structure from the unexposed regions such that the support structure supports the mirror pattern and hinge pattern.
- For the first embodiment, a single substrate is used to fabricate a MEMS mirror device. The single substrate is used to form the electrodes, mirror pattern, hinge pattern, and support structure. The height at which a center mirror component is above the electrodes is dictated by the thickness of the substrate.
- For a second embodiment, a MEMS mirror device fabrication method forms a release layer on a first substrate. A mirror pattern having a center mirror component and a hinge pattern are formed supported by the release layer. Electrodes are formed supported by a second substrate. A support structure is formed. The first substrate and the second substrate are attached using the support structure. The first substrate and the release layer are removed such that the support structure supports the mirror pattern and hinge pattern.
- For the second embodiment, two substrates are used to fabricate a MEMS mirror device. The height at which the center mirror component is above the electrodes is dictated by a thickness of the formed support structure. Thus, to increase the height of the of the center mirror component above the electrodes, a thicker support structure is formed. As such, the thickness of the support structure formed dictates the height at which a center component is above the electrodes.
- For a third embodiment, a MEMS mirror device fabrication method forms a release layer on a first substrate. A mirror pattern having a center mirror component and a hinge pattern are formed supported by the release layer. Electrodes are formed supported by a second substrate. A support structure is formed using a third substrate. The first substrate is attached with the second substrate using the support structure. The first substrate and release layer are removed.
- For the third embodiment, three substrates are used to fabricate a MEMS mirror device. A first substrate is used to form the hinge pattern and mirror pattern. A second substrate is used to form the electrodes. A third substrate is used to form the support structure. The thickness of the third substrate used dictates the thickness of the support structure. Thus, the height at which the center mirror component is above the electrodes is simply dictated by the thickness of the third substrate. Thus, to increase the height of the of the center mirror component above the electrodes, a thicker third substrate is simply used.
- For a fourth embodiment, a MEMS mirror device fabrication method forms electrodes supported by a first substrate. Portions of a second substrate are removed selectively on a bottom side. Portions of the second substrate are removed selectively on a topside to form a mirror pattern, frame pattern, hinge pattern, and support structure. The first substrate is attached with the second substrate.
- For the fourth embodiment, two substrates are used to fabricate a MEMS mirror device. The height at which the center mirror component is above the electrodes is dictated by the thickness of the second substrate used. Furthermore, the mirror pattern, frame pattern, hinge pattern, and support structure can be formed from a single substrate.
- For all the embodiments, a layer can be selectively patterned on a substrate using any combination of a photolithography and dry or wet etching process or a liftoff process. A liftoff process involves depositing a photosensitive film over a substrate that is then exposed and developed to pattern the photosensitive film. Material is then deposited over the entire surface the substrate and on the patterned photosensitive film. After the material is deposited over the substrate and on the patterned photosensitive film, the patterned photosensitive film is dissolved and any material formed thereon is removed. As a result of this process, the material deposited is selectively patterned. Furthermore, a layer may also be removed or released by using oxygen plasma that reacts with the layer to release or remove the layer from an attached material.
- FIG. 1 is top view of one embodiment of a MEMS mirror device without electrodes and a wiring pattern illustrating a
first mirror device 9A and asecond mirror device 9B having a support structure 5, hingepattern 6, andmirror pattern 7.Mirror pattern 7 may include a center mirror component 7 a,frame pattern 7 b, andmirror component 7 c. Center mirror component 7 a is capable of having an angular range of motion with respect to an axis.Frame pattern 7 b provides support for center mirror component 7 a.Mirror component 7 c may be used for alignment or bonding purposes. Alternatively,mirror component 7 c may be omitted frommirror pattern 7. - FIG. 2 is a complete top view of one embodiment of a MEMS mirror device such as that shown in FIG. 1 further illustrating electrodes4 and
wiring pattern 2 for thefirst mirror device 9A andsecond mirror device 9B. - FIG. 3 is a cross sectional side view showing the structure of one embodiment of a MEMS mirror device taken along the line A-A′ such as that shown in FIG. 2. As shown in FIG. 3, a MEMS mirror device includes a
substrate 1 havingwiring pattern 2 formed thereon. Electrodes 4 are formed such that electrodes are coupled withwiring pattern 2. Aninsulation layer 3 is formed to provide insulation forwiring pattern 2 and electrodes 4. - Support structure5 is formed on
insulation layer 3 adjacent from electrodes 4. Support structure 5 may include a post structure to provide support for layers formed thereon or attached therewith. Support structure 5 may define a honeycombed shape. Support structure 5 may also define holes such that the holes are centered approximately below the center mirror component. Support structure 5 provides support forhinge pattern 6 andmirror pattern 7. -
Mirror pattern 7 includes a center mirror component 7 a,frame pattern 7 b, andmirror component 7 c. Alternatively, mirror pattern may include center mirror component 7 a andframe pattern 7 b.Hinge pattern 6 is attached withmirror pattern 7 and support structure 5.Hinge pattern 6 may be a thin and flexible material.Hinge pattern 6 provides support formirror pattern 7.Frame pattern 7 b provides support for center mirror component 7 a.Mirror component 7 c is supported byhinge pattern 6 and may be used for alignment or bonding purposes. Alternatively,mirror component 7 c may be omitted frommirror pattern 7. - The center mirror component7 a is formed such that it is disposed above electrodes 4. Center mirror component 7 a includes a reflective surface to reflect beams of light. Electrodes 4 are located below at opposing edges of center mirror component 7 a. Center mirror component 7 a may also be connected with a ground line (not shown) in
substrate 1 for electrical shielding purposes. Electrodes 4 are coupled with arespective wiring pattern 2 located onsubstrate 1. Alternatively, a ground line may be disposed between electrodes 4 andwiring pattern 2 for purposes of electrical shielding. - Center mirror component7 a may move about an axis to have an angular range of motion caused by electrostatic actuation from electrodes 4. Electrostatic actuation is caused by a voltage being applied to electrodes 4 through
wiring pattern 2. A voltage applied to electrodes 4 creates an electric field between, for example, electrodes 4 and center mirror component 7 a. Typically, the electric field is created near the edges of center mirror component 7 a. The electric field causes center mirror component 7 a to have an angular range of motion with respect to an axis such as, for example, an axis parallel to hingepattern 7. The edges of center mirror component 7 a towards electrodes 4 at which the voltage is applied moves towards such electrodes 4. - By increasing the angular range of motion for center mirror component7 a, center mirror component 7 a can redirect beams of light to a larger number of positions thereby increasing flexibility for optical switching. Increasing the thickness for support structure 5 can increases the angular range of motion for center mirror component 7 a. Support structure 5 having an increased thickness provides a larger height for center mirror component 7 a to be off of
substrate 1. Because center mirror component 7 a may have a large height offsubstrate 1, center mirror component 7 a is provided with a larger angular range of motion. - For the following embodiments, the support structure can be fabricated to support the hinge pattern and mirror pattern such that a bottom surface of the center mirror component in a stationary non-rotating position is capable of exceeding a height of 50 μm above the electrodes. Also, in the following embodiments, the support structure may support the hinge pattern and mirror pattern such that the bottom surface of the center mirror component in a stationary non-rotating position is capable of having a height about 100 μm above the electrodes. At such heights, the following embodiments provide a center mirror component that is capable of having an angular range of motion exceeding 20 degrees with respect to an axis.
- FIGS. 4a through 4 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a first embodiment.
- Referring to FIG. 4a,
substrate 10 is exposed selectively on a first side to form exposedregions 11 a andunexposed regions 11 b insubstrate 10. A honeycombed mask may be used to expose selectivelysubstrate 10. Alternatively, other masks may be used to form exposed regions on a substrate such that mirror components are centered approximately over the exposed regions. For purposes of illustration, the first side is a topside ofsubstrate 10. -
Substrate 10 is a substrate that can be etched more rapidly in the exposed regions than in the unexposed regions. For example,substrate 10 may be a photosensitive glass substrate that can be exposed selectively and etched more rapidly in the exposed regions than in the unexposed regions. After being exposed selectively,substrate 10 may be polished to retain planarity and remove any materials that may have formed onsubstrate 10 during this process. - Referring to FIG. 4b, a first metal layer is formed on a second side of
substrate 10 and is selectively patterned and etched to formelectrodes 14. For purposes of explanation, the second side is a bottom side ofsubstrate 10. The first metal layer may be a metallic layer such as, for example, an aluminum Al layer. After formingelectrodes 14, an oxide layer is then formed overelectrodes 14 andsubstrate 10 on the bottom side and selectively patterned to forminsulation layer 13, such thatinsulation layer 13 exposes portions ofelectrodes 14. Alternatively, other dielectric layers may be used such as, for example, silicon dioxide SiO2 layer, silicon nitride SixNy layer, or silicon oxynitride SixOyNz layer, that can be selectively patterned and etched to forminsulation layer 13. - After forming
insulation layer 13, a second metal layer is formed oninsulation layer 13 and on exposed portions ofelectrodes 14 and is selectively patterned and etched to formwiring pattern 12. The second metal layer may also be a metallic layer such as, for example, an Al layer.Wiring pattern 12 is formed such that it is coupled withelectrodes 14.Insulation layer 13 provides insulation forwiring pattern 12 andelectrodes 14. - Referring to FIG. 4c, a polysilicon layer is formed on the topside of
substrate 10. The polysilicon layer is selectively patterned and etched to formhinge pattern 16. Alternatively, a polymer layer, oxide layer, nitride layer, silicon nitride SixNy layer, silicon dioxide SiO2, layer, or silicon oxynitride SixOyNz layer may be used that is selectively patterned and etched to formhinge pattern 16.Hinge pattern 16 is formed to be thin and flexible.Hinge pattern 16 is also formed such that portions of substrate 11 are exposed above an area nearelectrodes 14. - Referring to FIG. 4d, at least one layer having light reflective properties is formed on
hinge pattern 16 and on the exposed portions of the topside of substrate 11. For example, a metal layer having light reflective properties may be formed onhinge pattern 16 and portions of the exposed substrate 11 and selectively pattern and etched to form mirror pattern 17. The metal layer may be a gold Au metal layer, aluminum Al metal layer, or a copper Cu metal layer. Mirror pattern 17 includes acenter mirror component 17 a, frame pattern 17 b, andmirror component 17 c. Frame pattern 17 b is supported byhinge pattern 16. Frame pattern 17 b provides support forcenter mirror component 17 a.Mirror component 17 c is supported byhinge pattern 16. Alternatively,mirror component 17 c may be omitted from mirror pattern 17. - Multiple layers may also be used to form mirror pattern17. For example, a first metal layer is formed on hinge pattern 17 and on portions of the exposed substrate 11. A support layer is formed on the first metal layer. A second metal layer is formed on the support layer. The three layers are selectively patterned and etched to form mirror pattern 17.
- The first and second metal layers are layers having light reflective properties. For example, a gold Au metal layer, an aluminum Al metal layer, or a copper Cu metal layer may be used for the first and second metal layers. The support layer is a layer that provides a flat surface and structural support. For example, a silicon dioxide SiO2 layer, silicon nitride SixNy layer, polysilicon layer, silicon oxynitride SixOyNz layer, or a polymer layer may be used for the support layer. Alternatively, the support layer may include the same material as the first and second metal layers.
- Referring to FIG. 4e, a polymer layer is formed over mirror pattern 17 and hinge
pattern 16 and is patterned selectively and etched to formprotection layer 18. Alternatively, a polysilicon layer, oxide layer, or nitride layer may be used to formprotection layer 18.Protection layer 18 is patterned to protect mirror pattern 17 and hingepattern 16.Protection layer 18 is also patterned such that an etching solution can reach substrate 11. For example, a hydrofluoric (HF) acid etching solution is used to etch substrate 11. Alternatively, formingprotection layer 18 may be optional if mirror pattern 17 and hingepattern 16 are resistant to the etching solution. If, for example, HF acid is used and hingepattern 16 is made from an oxide material, which etches easily in HF acid, protection layer 18 (not made of an oxide) is then required. - Referring to FIG. 4f, the etching solution is deposited over substrate 11 to etch substrate 11. For example, HF acid is used that etches away the exposed
regions 11 a more rapidly than theunexposed regions 11 b such that remaining portions of theunexposed regions 11 b of substrate 11 form support structure 15. If a protection layer is used, then the protection layer is removed using an oxygen plasma, wet, or dry etch process. - The thusly-fabricated MEMS mirror device serves to provide a support structure using a single substrate. The single substrate is a photosensitive substrate. For example, the photosensitive substrate is a photosensitive glass substrate that is exposed selectively. Because the photosensitive substrate is exposed selectively, the photosensitive substrate can be etched to form the support structure after forming the hinge pattern and mirror pattern. Thus, mounting a mirror pattern and a hinge pattern on a support structure is avoided. Furthermore, the thickness of the photosensitive substrate dictates the height at which a center mirror component is above the electrodes.
- FIGS. 5a through 5 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a second embodiment.
- Referring to FIG. 5a, a polymer layer is formed on a
first substrate 20 to form arelease layer 21.Release layer 21 may also be a layer that can be etched easily away or is removed easily fromfirst substrate 20. For example,release layer 21 may be a polysilicon layer, oxide layer, or a nitride layer.First substrate 20 may be a silicon substrate, glass substrate, or a borosilicate glass substrate. - Referring to FIG. 5b, at least one layer having light reflective properties is formed on
release layer 21. For example, a metal layer having light reflective properties may be formed on release layer and selectively pattern and etched to formmirror pattern 27. The metal layer may be a gold Au metal layer, aluminum Al metal layer, or a copper Cu metal layer.Mirror pattern 27 includes acenter mirror component 27 a, frame pattern 27 b, and mirror component 27 c formed onrelease layer 21. Alternatively, mirror component 27 c may be omitted frommirror pattern 27. - Multiple layers may also be used to form
mirror pattern 27. For example, a first metal layer is formed onrelease layer 21. A support layer is formed on the first metal layer. A second metal layer is formed on the support layer. The three layers are selectively patterned and etched to formmirror pattern 27. - The first and second metal layers are layers having light reflective properties. For example, a gold Au metal layer, an aluminum Al metal layer, or a copper Cu metal layer may be used for the first and second metal layers. The support layer is a layer that provides a flat surface and structural support. For example, a silicon dioxide SiO2 layer, silicon nitride SixNy layer, polysilicon layer, silicon oxynitride SixOyNz layer, or a polymer layer may be used for the support layer. Alternatively, the support layer may include the same material as the first and second metal layers.
- After
mirror pattern 27 is formed onrelease layer 21, a polysilicon layer is formed overmirror pattern 27 and is selectively patterned and etched to formhinge pattern 26. Alternatively, a polymer layer, oxide layer, nitride layer, silicon nitride SixNy layer, silicon dioxide SiO2, layer, or silicon oxynitride SixOyNz layer may be used that is selectively patterned and etched to formhinge pattern 26.Hinge pattern 26 is formed on portions ofmirror pattern 27.Hinge pattern 26, however, is not formed oncenter mirror component 27 a.Hinge pattern 26 is formed to be thin and flexible. - Referring to FIG. 5c, a first metal layer is formed on a
second substrate 30 and is selectively patterned and etched to formwiring pattern 32.Second substrate 30 may be may be a silicon substrate, glass substrate, or borosilicate glass substrate. The first metal layer may be a metallic layer such as, for example, an aluminum Al layer. After formingwiring pattern 32, an oxide layer is then formed overwiring pattern 32 andsecond substrate 30 and is selectively patterned and etched to forminsulation layer 33.Insulation 33 is formed such that portions ofwiring pattern 32 are exposed. Alternatively, other dielectric layers may be used such as, for example, silicon dioxide SiO2 layer, silicon nitride SixNy layer, or silicon oxynitride SixOyNz layer, that can be selectively patterned and etched to forminsulation layer 33. - After forming
insulation layer 33, a second metal layer is formed overinsulation layer 33 andwiring pattern 32 and is selectively patterned and etched to formelectrodes 34. The second metal layer may also be a metallic layer such as, for example, an Al layer.Electrodes 34 are formed such that they are coupled withwiring pattern 32.Insulation 33 provides insulation forwiring pattern 32 andelectrodes 34. - Referring to FIG. 5d, a thick patterned film is used to form
support structure 35. A metal plating process is used with the thick patterned film to formsupport structure 35. For example, an electroless metal deposition process may be used to form support structure 25. - Initially, for the electroless metal deposition process, a thick photo resist film is formed on
insulation layer 33 and selectively patterned to allowsupport structure 35 to be formed therein oninsulation layer 33. Alternatively, a thick photo resist film may be formed onhinge pattern 26 and selectively patterned to allowsupport structure 35 to be formed onhinge pattern 26. - Subsequently, an aqueous solution having nickel Ni is deposited over the patterned photo resist film such that nickel Ni is formed in the patterned thick photo resist film. After Ni is formed, the remaining photo resist film is removed to form
support structure 35 made of Ni. Alternatively, an aqueous solution having copper Cu or gold Au may be used to formsupport structure 35 using the electroless metal deposition process. The remaining photo resist film is then removed. - Alternatively, an electroplating process or a metal sputtering process may be used. For the electroplating process, a thick photo resist film is formed on
insulation layer 33 and selectively patterned to allowsupport structure 35 to be formed therein oninsulation layer 33. Alternatively, a thick photo resist film is formed onhinge pattern 26 and selectively patterned to allowsupport structure 35 to be formed therein onhinge pattern 26. - Subsequently, an electroplating solution having nickel Ni is deposited over the patterned photo resist film and an electric current is passed through the solution such that Ni is formed in the patterned thick photo resist film. After Ni is formed, the remaining photo resist film is removed to form
support structure 35 made of Ni. Alternatively, an electroplating solution having copper Cu or gold Au may be used to formsupport structure 35 using the electroplating process. Depending on where the patterned photo resist film is formed, a thin conductive layer (not shown) may be formed selectively oninsulation layer 33 or hingepattern 26 to assist in the electroplating process. The photo resist film is then removed. - For the sputtering process, a thick photo resist film is formed on
insulation layer 33 and selectively patterned to allowsupport structure 35 to be formed therein oninsulation layer 33. Alternatively, a thick photo resist film is formed onhinge pattern 26 and selectively patterned to allowsupport structure 35 to be formed therein onhinge pattern 26. - Subsequently, metal is sputtered on the patterned thick photo resist film such that the metal is formed therein. For example, nickel Ni, copper Cu, or gold Au may be sputtered on the patterned thick photo resist film such that metal is formed therein. Subsequently, the remaining patterned thick photo resist film and metal formed thereon are removed to form
support structure 35. The thick photo resist film is then removed. - Referring to FIG. 5e,
first substrate 20 is attached withsecond substrate 30. Ifsupport structure 35 is formed oninsulation layer 33,first substrate 20 may be attached withsecond substrate 30 by flippingfirst substrate 20 andbonding hinge pattern 26 with a top side ofsupport structure 35. Alternatively, ifsupport structure 35 is formed onhinge pattern 26,first substrate 20 may be attached withsecond substrate 30 by flippingfirst substrate 20 andbonding support structure 35 withinsulation layer 33. -
Support structure 35 can be bonded toinsulation layer 33 or hingepattern 26 using a soldering bond technique that forms a bonding layer. For example, ifsupport structure 35 is formed oninsulation layer 33, abonding layer 38 may be formed tobond support structure 35 withhinge pattern 26. Alternatively, ifsupport structure 35 is formed onhinge pattern 26, a bonding layer may be formed nearinsulation layer 33 tobond support structure 35 withhinge pattern 26. The bonding layer may include a lead-tin PbSn mixture. Alternatively, a thin metal layer may be formed onhinge pattern 26 orinsulation layer 33 to assist in the bonding process. - Referring to FIG. 5f, after
first substrate 20 is attached withsecond substrate 30,first substrate 20 andrelease layer 21 are removed such thatsupport structure 35 supports hingepattern 26.Hinge pattern 26 supportsmirror pattern 27.First substrate 20 may be removed using an etching or polishing process. For example,first substrate 20 may be etched away using hydro-fluoric (HF) acid orfirst substrate 20 may be polished away.Release layer 21 may be removed using oxygen plasma, wet etch, or a dry etch process. - The thusly fabricated MEMS mirror device serves to provide a support structure using a thick film process. In the above process, the thickness of the thick photo resist film used dictates the thickness of
support structure 35. Furthermore, the thickness ofsupport structure 35 dictates the height in which a center mirror component is above the electrodes that determines angular range of motion for the center mirror component. - FIGS. 6a through 6 e are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to a third embodiment. Initially, the fabrication steps illustrated by FIG. 6a to form
release layer 41,mirror pattern 47, and hingepattern 46 are identical to the fabrication steps illustrated by FIGS. 5a and 5 b for afirst substrate 40 and accordingly descriptions to FIG. 6a will be omitted. Also, the fabrication steps illustrated by FIG. 6b to formwiring pattern 52,electrodes 54, andinsulation layer 53 using asecond substrate 50 are identical to the fabrication steps illustrated by FIG. 5c and accordingly descriptions to FIG. 6b will be omitted. - Referring to FIGS. 6c and 6 d, a
third substrate 60 is used to formsupport structure 65.Third substrate 60 may be etched selectively to formsupport structure 65. Third substrate may be a silicon substrate, glass substrate, or a borosilicate glass substrate.Third substrate 60 may be etched selectively in areas 61 a ofthird substrate 60 using a reactive ion etching (RIE) process. The RIE etching process forms deep holes inthird substrate 60 such that areas 61 b ofthird substrate 60 remain to formsupport structure 65. Alternatively, deep holes may be formed inthird substrate 60 using a wet etch or a laser ablation process such that areas 61 a are removed fromthird substrate 60. -
Third substrate 60 may also be a photosensitive substrate that is exposed selectively to form exposed regions 61 a and unexposed regions 61 b inthird substrate 60.Third substrate 60 is a substrate that can be etched more rapidly in the exposed regions than in the unexposed regions. After being exposed selectively,third substrate 60 may be polished to retain planarity and remove any materials that may have formed onthird substrate 60 during this process. - Subsequently, an etching solution is used to etch
third substrate 60. For example, HF acid etching solution is deposited selectively overthird substrate 60 to etchthird substrate 60. The HF acid etches away the exposed regions 61 a more rapidly than the unexposed regions 61 b such that the remaining portions of the unexposed regions 61 b ofthird substrate 60form support structure 65.Support structure 65 may define a honeycombed shape or define holes approximately centered with respect to center mirror components. - Referring to FIG. 6e,
first substrate 40 is attached withsecond substrate 50 usingsupport structure 65. For example,support structure 65 is bonded withinsulation layer 53 using a solder bond process thus forming abonding layer 69. Subsequently, hingepattern 46 is bonded withsupport structure 65 using a solder bond process thus forming abonding layer 68. Alternatively,support structure 65 is bonded withhinge pattern 46 using a solder bond process thus forming abonding layer 68. Subsequently, insulation layer is bonded withsupport structure 65 thus formingbonding layer 69. Bonding layers 68 and 69 may include a lead-tin PbSn mixture. A thin metal layer may also be formed oninsulation layer 53 and hingepattern 46 to assist in the bonding process. - Referring to FIG. 6f, after
first substrate 40 is attached withsecond substrate 50 usingsupport structure 65.First substrate 40 andrelease layer 41 are removed such thatsupport structure 65 supports hingepattern 46.Hinge pattern 46 supportsmirror pattern 47.First substrate 40 may be removed using an etching or polishing process. For example,first substrate 40 may be etched away using HF acid orfirst substrate 40 may be polished away. Release layer may be removed using an oxygen plasma, wet etch, or a dry etch process. - The thusly fabricated MEMS mirror device uses three substrates. One substrate is used to form
mirror pattern 47 and hingepattern 46. A second substrate is used to formelectrodes 54, and athird substrate 50 is used to form asupport structure 65. The height at which the center mirror component is above the electrodes is simply dictated by the thickness of the third substrate used. Thus, to increase the height of the center mirror component above the electrodes, a thicker substrate may be used. - FIG. 7a is a top view of a MEMS mirror device according to another embodiment without electrodes and a wiring pattern. FIG. 7a shows a first mirror device 101 a and a second mirror device 101 b having a
support structure 95, hingepattern 96, frame pattern 97, and mirror 97 a. -
Support structure 95, hingepattern 96, frame pattern 97, and mirror 97 a are all formed from a single substrate.Hinge pattern 96 provides support forframe 97 b andmirror 97 a.Frame 97 b provides support formirror 97 a.Support structure 95 provides support forhinge pattern 96,frame pattern 97 b, and mirror 97 a.Mirror 97 a is capable of having an angular range of motion with respect to an axis. - FIG. 7b is an illustration showing the cross-sectional side views along the lines B-B′, C-C′, D-D′, and E-E′ such as that shown in FIG. 7a to show the different thickness and width for the
hinge pattern 96,frame pattern 97 b, mirror 97 a, andsupport structure 95, respectively, for first mirror 101 a and second mirror 101 b. Referring to FIG. 7b, along the lines B-B′, C-C′, and D-D′, hingepattern 96 is formed to have a smaller thickness thanframe pattern 97 b andmirror 97 a. Alternatively, hingepattern 96 may be formed to have the same thickness asframe pattern 97 b andmirror 97 a.Frame pattern 97 b andmirror 97 a are formed to have the same thickness. - FIGS. 8a-8 f are cross-sectional side views illustrating process steps of a method for fabricating the MEMS mirror device according to the fourth embodiment. FIG. 8a illustrates the processing steps to form a wiring pattern, electrodes, insulation layer using a first substrate. Referring to FIG. 8a, the fabrication steps illustrated by FIG. 8a to form
wiring pattern 82,electrodes 84,insulation layer 83 using afirst substrate 80 are identical to the fabrication steps illustrated by FIGS. 5c and 6 b and accordingly descriptions to FIG. 8a will be omitted. - FIGS. 8b, 8 c, and 8 d illustrate the processing steps to form the hinge pattern, frame pattern, mirror, and support structure individually from a single substrate such as that shown in FIG. 7b. The processing steps are illustrated along the lines B-B′, C-C′, D-D′, E-E′ such as that shown in FIG. 7a for mirror device 101 a and mirror device 101 b.
- Referring to FIG. 8b, a
second substrate 90 is etched selectively on a first side to remove large portions ofsecond substrate 90 to define open areas (“windows”) 100 such that theopen areas 100 are located below wherehinge pattern 96,mirror 97 a, andframe pattern 97 b will be formed. For purposes of illustration, the first side ofsecond substrate 90 refers to a bottom side ofsecond substrate 90. To formopen areas 100, a silicon etching process is used to etch selectively the bottom side ofsecond substrate 90. For example, a reactive ion etching (RIE) process may be used to etch selectively a bottom side ofsecond substrate 90 to formopen areas 100. Alternatively, a wet etch or a laser ablation process may be used to etch the bottom side ofsecond substrate 90 to formopen areas 100. - An oxide layer is deposited on a second side of
second substrate 90 to form a mask layer 91. Alternatively, a polymer layer, silicon nitride SixNy layer, silicon oxynitride SixOyNz layer, or a metal layer may be used to form mask layer 91. Mask layer 91 may also be formed prior to formingopen areas 100. For purposes of illustration, the second side refers to the topside ofsecond substrate 90. Mask layer 91 is patterned to definehinge pattern 96,frame pattern 97 b, mirror 97 a, andsupport structure 95 fromsecond substrate 90. - FIGS. 8c and 8 d illustrate the processing steps for forming
hinge pattern 96,frame pattern 97 b, mirror 97 a, andsupport structure 95. The following process steps describe forminghinge pattern 96 such that it has a smaller thickness thanframe pattern 97 b andmirror 97 a. Alternatively, the following processing steps may be modified to formhinge pattern 96 having the same thickness asframe pattern 97 b andmirror 97 a. - Referring to FIG. 8c, mask layer 91 is patterned selectively on
second substrate 90 to expose portions ofsecond substrate 90. The patterned mask layer 91 defineshinge pattern 96,frame pattern 97 b, mirror 97 a, andsupport structure 95. The exposed portions ofsecond substrate 90 are etched using a silicon etching process. For example, a RIE etching process may be used to etch exposed portions ofsecond substrate 90 to a first depth such that a thin portion (“floor”) ofsecond substrate 90 remains aboveopen areas 100. Alternatively, a wet etch or a laser ablation process may be used to etch the exposed portions ofsecond substrate 90 to the first depth. - At this depth, an oxide layer is deposited over
second substrate 90 and etched selectively to form sidewalls 94. Alternatively, a polymer layer, silicon nitride SixNy layer, silicon oxynitride SixOyNz layer, or a metal layer may be used to form sidewalls 94. Sidewalls 94 provide protection to selective portions of the topside ofsecond substrate 90 that definehinge pattern 96,frame pattern 97 b, mirror 97 a, andsupport structure 95. Layers that have formed on the floor in making sidewalls 94 are the etched to expose the floor. - Subsequently, exposed portions of the floor of
second substrate 90 are etched using a silicon etching processes. For example, a RIE etching process may be used to etch exposed portions of the floor such that the floor falls below the sidewalls. Alternatively, a wet etch process or a laser ablation process may be used to etch the exposed portions of the floor to fall below the sidewalls. Next, a release process is performed to formhinge pattern 96,frame pattern 97 b, and mirror 97 a. The release process is an etching process that undercuts selectively the exposed portions of topside ofsecond substrate 90 that defines hingepattern 96,frame pattern 97 b, and mirror 97 a underneath sidewalls 94 such that the floor is separated. Ifhinge pattern 96 is to have the same thickness asframe pattern 97 b andmirror 97 a,hinge pattern 96,frame 97 b, and mirror 97 a are released at the same time. Alternatively, ifhinge pattern 96 is to have a smaller thickness thanframe pattern 97 b andmirror 97 a,frame pattern 97 b andmirror 97 a are released afterhinge pattern 96 at a lower depth. - The following step describes the release process. To release
frame pattern 97 b andmirror 97 a at a larger depth thanhinge pattern 96, the above steps are repeated such that exposed portions of the topside ofsecond substrate 90 that defineframe pattern 97 b andmirror 97 a underneath sidewalls 94 fall belowhinge pattern 96. - A RIE etching process may be used to release the exposed portions of the topside of second substrate that defines hinge
pattern 96,frame pattern 97 b, and mirror 97 a underneath sidewalls 94 to formhinge pattern 96,frame pattern 97 b, and mirror 97 a fromsecond substrate 90. Alternatively, a time controlled profile etching process may be used to releasehinge pattern 96,frame pattern 97 b, and mirror 97 a fromsecond substrate 96. The release process may undercutframe pattern 97 b andmirror 97 a underneath sidewalls 94 such that non-straight edge surfaces are formed. Alternatively, the release process may undercut hingepattern 96 such that non-straight edge surfaces are also formed.Hinge pattern 96,frame pattern 97 b, and mirror 97 a are thus formed after it has been released fromsecond substrate 90, and the remaining mask layer 91 and sidewalls 94 are removed. Alternatively, mask layer 91 and sidewalls 94 may remain in forming the MEMS mirror device. - Referring to FIG. 8d, the next step in the process is to remove the floor (“clear the floor”). The floor is etched away to clear the floor such that
hinge pattern 96,frame pattern 97 b, and mirror 97 a are suspended aboutsupport structure 95 andsecond substrate 90. For example, the floor ofsecond substrate 90 may be etched away using an RIE etching process. Alternatively, a wet etch or a laser ablation process may be used to etch the exposed portions of the floor to clear the floor.Second substrate 90 may also be flipped and the floor may be cleared from the back side using the same etching processes. After the floor has been cleared,support structure 95 is thusly formed. For purposes of illustration,support structure 95, hingepattern 96,frame pattern 97 b, and mirror 97 a are illustrated with straight surfaces, but may have non-straight edge surfaces. - FIG. 8e is a cross-sectional side of the thusly formed
hinge pattern 96,frame pattern 97 b, mirror 97 a, andsupport structure 95 taken along the line A-A′ such as that shown in FIG. 7a with showing electrodes. Referring to FIG. 8e,support structure 95 provides support forhinge pattern 96,frame pattern 97 b, and mirror 97 a. Hinge pattern 96 b provides support forframe pattern 97 b.Frame pattern 97 b provides support formirror 97 a. - A
reflective material 97 a′ may then be formed on a top surface ofmirror 97 a.Reflective material 97 a′ provides a reflective surface formirror 97 a, which is used to redirect beams of light. Alternatively,reflective material 97 a′ may be formed onframe pattern 97 b and hingepattern 96.Reflective material 97 a′ includes at least one layer. For example,reflective material 97 a′ may include a metal layer such as, for example, a gold Au metal layer, an aluminum metal layer, or a copper Cu metal layer. Alternatively,reflective material 97 a′ may be formed after the processing steps as illustrated in FIG. 8e or afterfirst substrate 80 is attached withsecond substrate 90. - FIG. 8f illustrate attaching
first substrate 80 withsecond substrate 90 to form the MEMS mirror device according to the fourth embodiment. Referring to FIG. 8f,first substrate 80 is attached withsecond substrate 90 usingsupport structure 95. For example,support structure 95 is bonded withinsulation layer 83 using a solder bond process thus forming abonding layer 98.Bonding layer 98 may include a lead-tin PbSn mixture. A thin metal layer may also be formed oninsulation layer 83 and a bottom side ofsupport structure 95 to assist in the bonding process. - Referring to FIG. 8f, the MEMS mirror device according to the fourth embodiment includes
first substrate 80,wiring pattern 82,insulation layer 83, andelectrodes 84.First substrate 80,wiring pattern 82,insulation layer 83, andelectrodes 84 are constructed and operate in a similar manner assubstrate 1,wiring pattern 2,insulation layer 3, and electrodes 4, respectively, of FIG. 3. - The MEMS mirror device according to the fourth embodiment also includes a
support structure 95, hingepattern 96,frame pattern 97 b, and mirror 97 a.Support structure 95, hingepattern 96,frame pattern 97 b, and mirror 97 a are made from a second substrate, which is separate fromfirst substrate 80. The substrate to formsupport structure 95, hingepattern 96,frame pattern 97 b, and mirror 97 a may be a single crystal silicon (SCS) substrate or a substrate in which deep holes may be formed.Support structure 95, hingepattern 96,frame pattern 97 b, and mirror 97 a are formed as a single unit.Support structure 95,mirror 97 a,frame pattern 97 b, and hingepattern 96 operate in a similar manner as support structure 5, center mirror component 7 a,frame pattern 7 b, and hingepattern 6, respectively, of FIG. 3. - The thusly fabricated MEMS mirror device uses two substrates. One substrate is used to form
electrodes 84,wiring pattern 82, andinsulation layer 83. A second substrate is used to formsupport structure 95,mirror 97 a,hinge pattern 96, andframe pattern 97 b. The height at which the mirror is above the electrodes is simply dictated by the thickness of the second substrate used. Thus, to increase the height of the of the center mirror component above the electrodes, a thicker second substrate may be used. Also, the mirror, frame pattern, and hinge pattern are formed without using thin film layering, which reduces the number of processing steps. - In the foregoing specification, the invention has been described with reference to specific exemplary embodiments thereof. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit and scope of the invention as set forth in the appended claims. The specification and drawings are, accordingly, to be regarded in an illustrative rather than a restrictive sense.
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AU2001233228A AU2001233228A1 (en) | 2000-02-01 | 2001-02-01 | Micro-electro-mechanical-system (mems) mirror device and methods for fabricatingthe same |
PCT/US2001/003357 WO2001056919A2 (en) | 2000-02-01 | 2001-02-01 | Micro-electro-mechanical-system (mems) mirror device and methods for fabricating the same |
US09/929,900 US6563106B1 (en) | 2000-02-01 | 2001-08-14 | Micro-electro-mechanical-system (MEMS) mirror device and methods for fabricating the same |
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Cited By (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020141690A1 (en) * | 2001-04-03 | 2002-10-03 | Sungho Jin | Mirror for use with a micro-electro-mechanical system (MEMS) optical device and a method of manufacture therefor |
US6618184B2 (en) * | 2001-04-03 | 2003-09-09 | Agere Systems Inc. | Device for use with a micro-electro-mechanical system (MEMS) optical device and a method of manufacture therefor |
WO2004001717A1 (en) * | 2002-06-19 | 2003-12-31 | Miradia, Inc. | Architecture of a reflective spatial light modulator |
US20040006576A1 (en) * | 2002-07-03 | 2004-01-08 | Sean Colbath | Systems and methods for providing multimedia information management |
EP1400487A2 (en) * | 2002-09-19 | 2004-03-24 | Nippon Telegraph and Telephone Corporation | Semiconductor unit having MEMS |
EP1405821A2 (en) * | 2002-10-04 | 2004-04-07 | Dalsa Semiconductor Inc. | Wafer level packaging technique for microdevices |
US20040069742A1 (en) * | 2002-06-19 | 2004-04-15 | Pan Shaoher X. | Fabrication of a reflective spatial light modulator |
US20040145822A1 (en) * | 2002-06-19 | 2004-07-29 | Pan Shaoher X. | Reflective spatial light modulator |
US20050078348A1 (en) * | 2003-09-30 | 2005-04-14 | Wen-Jian Lin | Structure of a micro electro mechanical system and the manufacturing method thereof |
US20050104144A1 (en) * | 2003-11-19 | 2005-05-19 | Xhp Microsystems, Inc. | Method and apparatus to reduce parasitic forces in electro-mechanical systems |
US20050174628A1 (en) * | 2002-06-19 | 2005-08-11 | Miradia Inc. | Memory cell dual protection |
US20050255666A1 (en) * | 2004-05-11 | 2005-11-17 | Miradia Inc. | Method and structure for aligning mechanical based device to integrated circuits |
US6992810B2 (en) | 2002-06-19 | 2006-01-31 | Miradia Inc. | High fill ratio reflective spatial light modulator with hidden hinge |
US20060023286A1 (en) * | 2004-07-28 | 2006-02-02 | Miradia Inc. | Method and apparatus for a reflective spatial light modulator with a flexible pedestal |
US20060043918A1 (en) * | 2004-08-27 | 2006-03-02 | Sequence Controls Inc. | Apparatus for controlling heat generation and recovery in an induction motor |
US20060077519A1 (en) * | 2004-09-27 | 2006-04-13 | Floyd Philip D | System and method for providing thermal compensation for an interferometric modulator display |
US7034984B2 (en) | 2002-06-19 | 2006-04-25 | Miradia Inc. | Fabrication of a high fill ratio reflective spatial light modulator with hidden hinge |
US20060087717A1 (en) * | 2004-06-18 | 2006-04-27 | Miradia Inc. | Mirror structure with single crystal silicon cross-member |
US20060148121A1 (en) * | 2005-01-03 | 2006-07-06 | Miradia Inc. | Method and structure for forming an integrated spatial light modulator |
US20060152795A1 (en) * | 2005-01-07 | 2006-07-13 | Miradia Inc. | Electrical contact method and structure for deflection devices formed in an array configuration |
US20060152794A1 (en) * | 2005-01-07 | 2006-07-13 | Miradia Inc. | Method and structure for reducing parasitic influences of deflection devices on spatial light modulators |
US7095546B2 (en) | 2003-04-24 | 2006-08-22 | Metconnex Canada Inc. | Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays |
US20060222312A1 (en) * | 2005-02-16 | 2006-10-05 | Mohiuddin Mala | Articulated MEMs structures |
US20060268398A1 (en) * | 2005-05-27 | 2006-11-30 | The Regents Of The University Of California | MEMS tunable vertical-cavity semiconductor optical amplifier |
US20060274397A1 (en) * | 2005-06-01 | 2006-12-07 | Miradia Inc. | Co-planar surface and torsion device mirror structure and method of manufacture for optical displays |
US20070001247A1 (en) * | 2000-12-07 | 2007-01-04 | Patel Satyadev R | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
US20070042524A1 (en) * | 2005-08-19 | 2007-02-22 | Lior Kogut | MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same |
US7184195B2 (en) | 2005-06-15 | 2007-02-27 | Miradia Inc. | Method and structure reducing parasitic influences of deflection devices in an integrated spatial light modulator |
US20070047900A1 (en) * | 2005-07-22 | 2007-03-01 | Sampsell Jeffrey B | MEMS devices having support structures and methods of fabricating the same |
US7190508B2 (en) | 2005-06-15 | 2007-03-13 | Miradia Inc. | Method and structure of patterning landing pad structures for spatial light modulators |
US7202989B2 (en) | 2005-06-01 | 2007-04-10 | Miradia Inc. | Method and device for fabricating a release structure to facilitate bonding of mirror devices onto a substrate |
US7221495B2 (en) * | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
US20070134896A1 (en) * | 2005-12-14 | 2007-06-14 | Spatial Photonics, Inc. | Method for fabricating a micro structure |
US7295726B1 (en) | 2003-12-02 | 2007-11-13 | Adriatic Research Institute | Gimbal-less micro-electro-mechanical-system tip-tilt and tip-tilt-piston actuators and a method for forming the same |
US20070269748A1 (en) * | 2003-04-15 | 2007-11-22 | Idc, Llc. | Method for manufacturing an array of interferometric modulators |
US20080018974A1 (en) * | 2006-07-18 | 2008-01-24 | Samsung Electronics Co., Ltd. | Scanner |
US20080025849A1 (en) * | 2006-07-31 | 2008-01-31 | Hitachi, Ltd. | High-Pressure Fuel Pump Control Apparatus for an Internal Combustion Engine |
US20080049292A1 (en) * | 2006-08-24 | 2008-02-28 | Olympus Corporation | Micro-mirror array device |
US7428353B1 (en) | 2003-12-02 | 2008-09-23 | Adriatic Research Institute | MEMS device control with filtered voltage signal shaping |
US7449284B2 (en) | 2004-05-11 | 2008-11-11 | Miradia Inc. | Method and structure for fabricating mechanical mirror structures using backside alignment techniques |
US7502158B2 (en) | 2005-10-13 | 2009-03-10 | Miradia Inc. | Method and structure for high fill factor spatial light modulator with integrated spacer layer |
US20090233395A1 (en) * | 2006-06-14 | 2009-09-17 | Magnachip Semiconductor Ltd. | Package of MEMS device and method for fabricating the same |
US20100009514A1 (en) * | 2008-07-08 | 2010-01-14 | Electronics And Telecommunications Research Institute | Method of fabricating micro-vertical structure |
US20100046058A1 (en) * | 2005-10-28 | 2010-02-25 | Qualcomm Mems Technologies, Inc. | Diffusion barrier layer for mems devices |
US7679812B2 (en) | 2005-07-22 | 2010-03-16 | Qualcomm Mems Technologies Inc. | Support structure for MEMS device and methods therefor |
US7684104B2 (en) | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
US7706044B2 (en) | 2003-05-26 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | Optical interference display cell and method of making the same |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
US20100109102A1 (en) * | 2005-01-03 | 2010-05-06 | Miradia Inc. | Method and structure for forming a gyroscope and accelerometer |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
US7781850B2 (en) | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
US7830589B2 (en) | 2004-09-27 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
US8068268B2 (en) | 2007-07-03 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | MEMS devices having improved uniformity and methods for making them |
CN102496611A (en) * | 2011-12-31 | 2012-06-13 | 上海集成电路研发中心有限公司 | Structure used for integrated circuit (IC) metal interconnection reliability test or micro-electro-mechanical system (MEMS) electrode layer |
US8427657B2 (en) | 2008-08-08 | 2013-04-23 | Mirrorcle Technologies, Inc. | Device for optical imaging, tracking, and position measurement with a scanning MEMS mirror |
US20130207970A1 (en) * | 2012-02-15 | 2013-08-15 | Primesense Ltd. | Scanning depth engine |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
US20140153001A1 (en) * | 2012-03-22 | 2014-06-05 | Primesense Ltd. | Gimbaled scanning mirror array |
US9267787B2 (en) | 2013-03-15 | 2016-02-23 | Apple Inc. | Depth scanning with multiple emitters |
US9304316B2 (en) | 2004-11-15 | 2016-04-05 | Apple Inc. | Method and device for scanning light |
US9482863B2 (en) * | 2012-10-23 | 2016-11-01 | Apple Inc. | Production of micro-mechanical devices |
US20160320609A1 (en) * | 2013-12-20 | 2016-11-03 | Pioneer Corporation | Driving apparatus |
US9525863B2 (en) | 2015-04-29 | 2016-12-20 | Apple Inc. | Time-of-flight depth mapping with flexible scan pattern |
US9677878B2 (en) | 2010-08-11 | 2017-06-13 | Apple Inc. | Scanning projectors and image capture modules for 3D mapping |
US9703096B2 (en) | 2015-09-30 | 2017-07-11 | Apple Inc. | Asymmetric MEMS mirror assembly |
WO2017171854A1 (en) * | 2016-04-01 | 2017-10-05 | Intel Corporation | Process for creating piezo-electric mirrors in package |
US9784838B1 (en) | 2014-11-26 | 2017-10-10 | Apple Inc. | Compact scanner with gimbaled optics |
US9798135B2 (en) | 2015-02-16 | 2017-10-24 | Apple Inc. | Hybrid MEMS scanning module |
US9835853B1 (en) | 2014-11-26 | 2017-12-05 | Apple Inc. | MEMS scanner with mirrors of different sizes |
US9897801B2 (en) | 2015-09-30 | 2018-02-20 | Apple Inc. | Multi-hinge mirror assembly |
US20180086630A1 (en) * | 2016-09-27 | 2018-03-29 | Infineon Technologies Ag | Method for processing a monocrystalline substrate and micromechanical structure |
US10018723B2 (en) | 2012-07-26 | 2018-07-10 | Apple Inc. | Dual-axis scanning mirror |
US10101578B2 (en) | 2016-06-30 | 2018-10-16 | Stmicroelectronics S.R.L. | Micro-electro-mechanical device having a tiltable structure, with detection of the position of the tiltable structure |
US10298913B2 (en) | 2016-08-18 | 2019-05-21 | Apple Inc. | Standalone depth camera |
US10324171B2 (en) | 2015-12-20 | 2019-06-18 | Apple Inc. | Light detection and ranging sensor |
US10488652B2 (en) | 2016-09-21 | 2019-11-26 | Apple Inc. | Prism-based scanner |
US10739460B2 (en) | 2010-08-11 | 2020-08-11 | Apple Inc. | Time-of-flight detector with single-axis scan |
DE102008054784B4 (en) | 2008-12-17 | 2021-09-16 | Robert Bosch Gmbh | Micromirrors |
US11604347B2 (en) | 2019-08-18 | 2023-03-14 | Apple Inc. | Force-balanced micromirror with electromagnetic actuation |
US11726240B2 (en) | 2020-02-14 | 2023-08-15 | Google Llc | Variable mesh low mass MEMS mirrors |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180426B1 (en) | 1999-03-01 | 2001-01-30 | Mou-Shiung Lin | High performance sub-system design and assembly |
US6753638B2 (en) * | 2000-02-03 | 2004-06-22 | Calient Networks, Inc. | Electrostatic actuator for micromechanical systems |
US7190854B1 (en) * | 2000-05-24 | 2007-03-13 | Active Optical Networks, Inc. | Methods for forming an array of MEMS optical elements |
US6632373B1 (en) * | 2000-09-28 | 2003-10-14 | Xerox Corporation | Method for an optical switch on a substrate |
US6504643B1 (en) * | 2000-09-28 | 2003-01-07 | Xerox Corporation | Structure for an optical switch on a substrate |
US6632374B1 (en) * | 2000-09-28 | 2003-10-14 | Xerox Corporation | Method for an optical switch on a silicon on insulator substrate |
DE60116969T2 (en) * | 2000-09-28 | 2006-07-27 | Xerox Corp. | Production of a mirror structure |
TWI313507B (en) | 2002-10-25 | 2009-08-11 | Megica Corporatio | Method for assembling chips |
JP2003005101A (en) * | 2001-06-26 | 2003-01-08 | Seiko Epson Corp | Optical modulation device and method for manufacturing the same |
JP3775276B2 (en) * | 2001-10-24 | 2006-05-17 | 株式会社デンソー | Electrostatic actuator |
US20030122206A1 (en) * | 2001-11-09 | 2003-07-03 | Amal Bhattarai | Multi-chip module integrating MEMS mirror array with electronics |
EP1518822A3 (en) * | 2001-12-06 | 2007-02-28 | Microfabrica Inc. | Complex microdevices and apparatus and methods for fabricating such devices |
TW503496B (en) | 2001-12-31 | 2002-09-21 | Megic Corp | Chip packaging structure and manufacturing process of the same |
TW544882B (en) | 2001-12-31 | 2003-08-01 | Megic Corp | Chip package structure and process thereof |
US6673698B1 (en) | 2002-01-19 | 2004-01-06 | Megic Corporation | Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers |
TW584950B (en) * | 2001-12-31 | 2004-04-21 | Megic Corp | Chip packaging structure and process thereof |
US7027203B2 (en) * | 2002-03-19 | 2006-04-11 | Xanoptix Inc. | Combination micromachine and optical device array |
US7728339B1 (en) | 2002-05-03 | 2010-06-01 | Calient Networks, Inc. | Boundary isolation for microelectromechanical devices |
WO2004034126A1 (en) * | 2002-10-10 | 2004-04-22 | Fujitsu Limited | Micro moving element comprising torsion bar |
US7065736B1 (en) | 2003-09-24 | 2006-06-20 | Sandia Corporation | System for generating two-dimensional masks from a three-dimensional model using topological analysis |
US7091057B2 (en) * | 2003-12-19 | 2006-08-15 | Agency For Science, Technology And Research | Method of making a single-crystal-silicon 3D micromirror |
FR2864634B1 (en) * | 2003-12-26 | 2006-02-24 | Commissariat Energie Atomique | OPTICAL COMPONENTS AND METHOD FOR PRODUCING THE SAME |
TWI235735B (en) * | 2004-06-18 | 2005-07-11 | Walsin Lihwa Corp | Two-axis element and manufacturing method thereof |
US7616987B2 (en) * | 2004-10-05 | 2009-11-10 | Agency For Science, Technology And Research | Microprobe for 3D bio-imaging, method for fabricating the same and use thereof |
KR100624436B1 (en) * | 2004-10-19 | 2006-09-15 | 삼성전자주식회사 | 2-axis actuator and method of manufacturing the same |
KR100661347B1 (en) * | 2004-10-27 | 2006-12-27 | 삼성전자주식회사 | Micro thin film structure, micro electro mechanical system switch using the same and manufacturing method of them |
US7242515B2 (en) * | 2004-12-22 | 2007-07-10 | Texas Instruments Incorporated | Structure and method for reducing thermal stresses on a torsional hinged device |
US7410907B2 (en) * | 2005-03-31 | 2008-08-12 | Lucent Technologies Inc. | Fabricating integrated devices using embedded masks |
TWI269420B (en) | 2005-05-03 | 2006-12-21 | Megica Corp | Stacked chip package and process thereof |
US7372617B2 (en) * | 2005-07-06 | 2008-05-13 | Peter Enoksson | Hidden hinge MEMS device |
US7173426B1 (en) | 2005-11-29 | 2007-02-06 | General Electric Company | Optical link for transmitting data through air from a plurality of receiver coils in a magnetic resonance imaging system |
KR100650876B1 (en) * | 2005-12-26 | 2006-11-28 | 동부일렉트로닉스 주식회사 | Digital micromirror device and method of fabricating the same |
DE102006003718B4 (en) * | 2006-01-26 | 2008-07-17 | Atmel Germany Gmbh | Micro-electro-mechanical device and manufacturing process for integrated micro-electro-mechanical devices |
US9079762B2 (en) | 2006-09-22 | 2015-07-14 | Ethicon Endo-Surgery, Inc. | Micro-electromechanical device |
US7713265B2 (en) | 2006-12-22 | 2010-05-11 | Ethicon Endo-Surgery, Inc. | Apparatus and method for medically treating a tattoo |
US8801606B2 (en) | 2007-01-09 | 2014-08-12 | Ethicon Endo-Surgery, Inc. | Method of in vivo monitoring using an imaging system including scanned beam imaging unit |
US8273015B2 (en) | 2007-01-09 | 2012-09-25 | Ethicon Endo-Surgery, Inc. | Methods for imaging the anatomy with an anatomically secured scanner assembly |
US8216214B2 (en) | 2007-03-12 | 2012-07-10 | Ethicon Endo-Surgery, Inc. | Power modulation of a scanning beam for imaging, therapy, and/or diagnosis |
US8626271B2 (en) | 2007-04-13 | 2014-01-07 | Ethicon Endo-Surgery, Inc. | System and method using fluorescence to examine within a patient's anatomy |
US7995045B2 (en) | 2007-04-13 | 2011-08-09 | Ethicon Endo-Surgery, Inc. | Combined SBI and conventional image processor |
US8160678B2 (en) | 2007-06-18 | 2012-04-17 | Ethicon Endo-Surgery, Inc. | Methods and devices for repairing damaged or diseased tissue using a scanning beam assembly |
US7982776B2 (en) | 2007-07-13 | 2011-07-19 | Ethicon Endo-Surgery, Inc. | SBI motion artifact removal apparatus and method |
US9125552B2 (en) | 2007-07-31 | 2015-09-08 | Ethicon Endo-Surgery, Inc. | Optical scanning module and means for attaching the module to medical instruments for introducing the module into the anatomy |
US7983739B2 (en) | 2007-08-27 | 2011-07-19 | Ethicon Endo-Surgery, Inc. | Position tracking and control for a scanning assembly |
US7925333B2 (en) | 2007-08-28 | 2011-04-12 | Ethicon Endo-Surgery, Inc. | Medical device including scanned beam unit with operational control features |
WO2009079460A1 (en) * | 2007-12-14 | 2009-06-25 | University Of Florida Research Foundation, Inc. | Electrothermal microactuator for large vertical displacement without tilt or lateral shift |
US8050520B2 (en) | 2008-03-27 | 2011-11-01 | Ethicon Endo-Surgery, Inc. | Method for creating a pixel image from sampled data of a scanned beam imager |
US8332014B2 (en) | 2008-04-25 | 2012-12-11 | Ethicon Endo-Surgery, Inc. | Scanned beam device and method using same which measures the reflectance of patient tissue |
US7719754B2 (en) * | 2008-09-30 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Multi-thickness layers for MEMS and mask-saving sequence for same |
IT201600079455A1 (en) * | 2016-07-28 | 2018-01-28 | St Microelectronics Srl | PROCEDURE FOR MANUFACTURING A MEMS TYPE MICROSPECTOR DEVICE AND ITS DEVICE |
US10399179B2 (en) | 2016-12-14 | 2019-09-03 | General Electric Company | Additive manufacturing systems and methods |
DE102017120290B3 (en) | 2017-09-04 | 2018-11-08 | Infineon Technologies Ag | Method for processing a layer structure |
JP2020030067A (en) * | 2018-08-21 | 2020-02-27 | セイコーエプソン株式会社 | Physical quantity sensor, sensor device, electronic device, and movable body |
Family Cites Families (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3493820A (en) | 1966-12-01 | 1970-02-03 | Raytheon Co | Airgap isolated semiconductor device |
US4104086A (en) | 1977-08-15 | 1978-08-01 | International Business Machines Corporation | Method for forming isolated regions of silicon utilizing reactive ion etching |
FR2458195B1 (en) | 1979-05-30 | 1986-02-28 | Materiel Telephonique | VERY LARGE NUMBER OF CHANNELS OPTICAL SWITCH |
US4421381A (en) | 1980-04-04 | 1983-12-20 | Yokogawa Hokushin Electric Corp. | Mechanical vibrating element |
US4654663A (en) | 1981-11-16 | 1987-03-31 | Piezoelectric Technology Investors, Ltd. | Angular rate sensor system |
JPS5961045A (en) | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
US4553436A (en) | 1982-11-09 | 1985-11-19 | Texas Instruments Incorporated | Silicon accelerometer |
US4519128A (en) | 1983-10-05 | 1985-05-28 | International Business Machines Corporation | Method of making a trench isolated device |
US4598585A (en) | 1984-03-19 | 1986-07-08 | The Charles Stark Draper Laboratory, Inc. | Planar inertial sensor |
US4688069A (en) | 1984-03-22 | 1987-08-18 | International Business Machines Corporation | Isolation for high density integrated circuits |
JPS6197572A (en) | 1984-10-19 | 1986-05-16 | Nissan Motor Co Ltd | Manufacture of semiconductor acceleration sensor |
US4571819A (en) | 1984-11-01 | 1986-02-25 | Ncr Corporation | Method for forming trench isolation structures |
US4784720A (en) | 1985-05-03 | 1988-11-15 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
US4855017A (en) | 1985-05-03 | 1989-08-08 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
GB2175705B (en) | 1985-05-24 | 1989-04-19 | Stc Plc | Dirigible reflector and mounting made of crystal material |
US5172262A (en) | 1985-10-30 | 1992-12-15 | Texas Instruments Incorporated | Spatial light modulator and method |
US4670092A (en) | 1986-04-18 | 1987-06-02 | Rockwell International Corporation | Method of fabricating a cantilever beam for a monolithic accelerometer |
US4922756A (en) | 1988-06-20 | 1990-05-08 | Triton Technologies, Inc. | Micro-machined accelerometer |
US4838631A (en) | 1986-12-22 | 1989-06-13 | General Electric Company | Laser beam directing system |
US4851080A (en) | 1987-06-29 | 1989-07-25 | Massachusetts Institute Of Technology | Resonant accelerometer |
US5016072A (en) | 1988-01-13 | 1991-05-14 | The Charles Stark Draper Laboratory, Inc. | Semiconductor chip gyroscopic transducer |
US4876217A (en) | 1988-03-24 | 1989-10-24 | Motorola Inc. | Method of forming semiconductor structure isolation regions |
JPH0623782B2 (en) | 1988-11-15 | 1994-03-30 | 株式会社日立製作所 | Capacitance type acceleration sensor and semiconductor pressure sensor |
US4932745A (en) | 1989-07-25 | 1990-06-12 | At&T Bell Laboratories | Radiation switching arrangement with moving deflecting element |
US5097354A (en) | 1989-07-27 | 1992-03-17 | Omron Corporation | Beam scanner |
GB2239101B (en) * | 1989-11-17 | 1993-09-22 | Marconi Gec Ltd | Optical device |
US5428259A (en) | 1990-02-02 | 1995-06-27 | Nec Corporation | Micromotion mechanical structure and a process for the production thereof |
US5126812A (en) | 1990-02-14 | 1992-06-30 | The Charles Stark Draper Laboratory, Inc. | Monolithic micromechanical accelerometer |
DE69102590T2 (en) | 1990-05-18 | 1994-10-06 | British Aerospace | Inertial sensors. |
US5083857A (en) | 1990-06-29 | 1992-01-28 | Texas Instruments Incorporated | Multi-level deformable mirror device |
US5068203A (en) | 1990-09-04 | 1991-11-26 | Delco Electronics Corporation | Method for forming thin silicon membrane or beam |
US5203208A (en) | 1991-04-29 | 1993-04-20 | The Charles Stark Draper Laboratory | Symmetrical micromechanical gyroscope |
US5235187A (en) | 1991-05-14 | 1993-08-10 | Cornell Research Foundation | Methods of fabricating integrated, aligned tunneling tip pairs |
US5121180A (en) | 1991-06-21 | 1992-06-09 | Texas Instruments Incorporated | Accelerometer with central mass in support |
US5198390A (en) | 1992-01-16 | 1993-03-30 | Cornell Research Foundation, Inc. | RIE process for fabricating submicron, silicon electromechanical structures |
US5393375A (en) | 1992-02-03 | 1995-02-28 | Cornell Research Foundation, Inc. | Process for fabricating submicron single crystal electromechanical structures |
US5287082A (en) | 1992-07-02 | 1994-02-15 | Cornell Research Foundation, Inc. | Submicron isolated, released resistor structure |
US5397904A (en) | 1992-07-02 | 1995-03-14 | Cornell Research Foundation, Inc. | Transistor microstructure |
DE4224601A1 (en) | 1992-07-23 | 1994-01-27 | Somatel Sondermaschinenbau Tel | Electrostatic positioning system for optical beam deflection mirror, e.g. for colour image projection - produces component of force along plane of mirror using parallel fixed electrodes above and below plane of mirror |
DE4241045C1 (en) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Process for anisotropic etching of silicon |
DE69333551T2 (en) | 1993-02-04 | 2005-06-23 | Cornell Research Foundation, Inc. | Single mask process for making microstructures, single crystal fabrication process |
US5399415A (en) | 1993-02-05 | 1995-03-21 | Cornell Research Foundation, Inc. | Isolated tungsten microelectromechanical structures |
GB2275787A (en) * | 1993-03-05 | 1994-09-07 | British Aerospace | Silicon micro-mirror unit |
US5427975A (en) | 1993-05-10 | 1995-06-27 | Delco Electronics Corporation | Method of micromachining an integrated sensor on the surface of a silicon wafer |
US5563343A (en) | 1993-05-26 | 1996-10-08 | Cornell Research Foundation, Inc. | Microelectromechanical lateral accelerometer |
US5426070A (en) | 1993-05-26 | 1995-06-20 | Cornell Research Foundation, Inc. | Microstructures and high temperature isolation process for fabrication thereof |
US5610335A (en) | 1993-05-26 | 1997-03-11 | Cornell Research Foundation | Microelectromechanical lateral accelerometer |
US5536988A (en) | 1993-06-01 | 1996-07-16 | Cornell Research Foundation, Inc. | Compound stage MEM actuator suspended for multidimensional motion |
US5673139A (en) | 1993-07-19 | 1997-09-30 | Medcom, Inc. | Microelectromechanical television scanning device and method for making the same |
US5488862A (en) | 1993-10-18 | 1996-02-06 | Armand P. Neukermans | Monolithic silicon rate-gyro with integrated sensors |
US5629790A (en) | 1993-10-18 | 1997-05-13 | Neukermans; Armand P. | Micromachined torsional scanner |
US6044705A (en) | 1993-10-18 | 2000-04-04 | Xros, Inc. | Micromachined members coupled for relative rotation by torsion bars |
US5483158A (en) | 1993-10-21 | 1996-01-09 | The Regents Of The University Of California | Method and apparatus for tuning MRI RF coils |
US5645684A (en) | 1994-03-07 | 1997-07-08 | The Regents Of The University Of California | Multilayer high vertical aspect ratio thin film structures |
US5508231A (en) | 1994-03-07 | 1996-04-16 | National Semiconductor Corporation | Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits |
US5444566A (en) | 1994-03-07 | 1995-08-22 | Texas Instruments Incorporated | Optimized electronic operation of digital micromirror devices |
DE4414968A1 (en) | 1994-04-28 | 1995-11-02 | Siemens Ag | Microsystem with integrated circuit and micromechanical component and manufacturing process |
US5454906A (en) * | 1994-06-21 | 1995-10-03 | Texas Instruments Inc. | Method of providing sacrificial spacer for micro-mechanical devices |
US5703728A (en) * | 1994-11-02 | 1997-12-30 | Texas Instruments Incorporated | Support post architecture for micromechanical devices |
US5628917A (en) | 1995-02-03 | 1997-05-13 | Cornell Research Foundation, Inc. | Masking process for fabricating ultra-high aspect ratio, wafer-free micro-opto-electromechanical structures |
US5869916A (en) | 1995-05-26 | 1999-02-09 | Asmo Co., Ltd. | Electrostatic actuator with different electrode spacing |
US5770465A (en) | 1995-06-23 | 1998-06-23 | Cornell Research Foundation, Inc. | Trench-filling etch-masking microfabrication technique |
US6000280A (en) | 1995-07-20 | 1999-12-14 | Cornell Research Foundation, Inc. | Drive electrodes for microfabricated torsional cantilevers |
US5626716A (en) | 1995-09-29 | 1997-05-06 | Lam Research Corporation | Plasma etching of semiconductors |
US5907425A (en) | 1995-12-19 | 1999-05-25 | The Board Of Trustees Of The Leland Stanford Junior University | Miniature scanning confocal microscope |
US5670881A (en) | 1996-02-09 | 1997-09-23 | Toshiba America, Inc. | Discrete step remotely adjustable matching circuit for MRI RF coils |
US5933746A (en) | 1996-04-23 | 1999-08-03 | Harris Corporation | Process of forming trench isolation device |
US5759913A (en) | 1996-06-05 | 1998-06-02 | Advanced Micro Devices, Inc. | Method of formation of an air gap within a semiconductor dielectric by solvent desorption |
US5637189A (en) | 1996-06-25 | 1997-06-10 | Xerox Corporation | Dry etch process control using electrically biased stop junctions |
US5872880A (en) | 1996-08-12 | 1999-02-16 | Ronald S. Maynard | Hybrid-optical multi-axis beam steering apparatus |
US5798557A (en) | 1996-08-29 | 1998-08-25 | Harris Corporation | Lid wafer bond packaging and micromachining |
US5914801A (en) * | 1996-09-27 | 1999-06-22 | Mcnc | Microelectromechanical devices including rotating plates and related methods |
US5804084A (en) | 1996-10-11 | 1998-09-08 | Sandia Corporation | Use of chemical mechanical polishing in micromachining |
US6072617A (en) | 1996-11-26 | 2000-06-06 | Texas Instruments Incorporated | Micro mechanical device with memory metal component |
JP3301334B2 (en) | 1997-01-31 | 2002-07-15 | 三菱電機株式会社 | Sensor element and method of manufacturing the same |
US5999303A (en) * | 1997-03-24 | 1999-12-07 | Seagate Technology Inc. | Micro-machined mirror using tethered elements |
DE69806846T2 (en) | 1997-05-08 | 2002-12-12 | Texas Instruments Inc | Improvements for spatial light modulators |
US6121552A (en) | 1997-06-13 | 2000-09-19 | The Regents Of The University Of Caliofornia | Microfabricated high aspect ratio device with an electrical isolation trench |
US5969848A (en) | 1997-07-03 | 1999-10-19 | The Regents Of The University Of California | Micromachined electrostatic vertical actuator |
US6075639A (en) | 1997-10-22 | 2000-06-13 | The Board Of Trustees Of The Leland Stanford Junior University | Micromachined scanning torsion mirror and method |
US6028690A (en) | 1997-11-26 | 2000-02-22 | Texas Instruments Incorporated | Reduced micromirror mirror gaps for improved contrast ratio |
DE19757181A1 (en) | 1997-12-19 | 1999-07-01 | Bosch Gmbh Robert | Arrangement for coupling glass fibers |
DE19800745A1 (en) * | 1998-01-12 | 1999-07-15 | Bosch Gmbh Robert | Design and manufacturing process for a micromechanical device |
US5998906A (en) | 1998-01-13 | 1999-12-07 | Seagate Technology, Inc. | Electrostatic microactuator and method for use thereof |
DE69942486D1 (en) | 1998-01-15 | 2010-07-22 | Cornell Res Foundation Inc | TRACK INSULATION FOR MICROMECHANICAL COMPONENTS |
US6147790A (en) * | 1998-06-02 | 2000-11-14 | Texas Instruments Incorporated | Spring-ring micromechanical device |
US6097860A (en) | 1998-06-05 | 2000-08-01 | Astarte Fiber Networks, Inc. | Compact optical matrix switch with fixed location fibers |
US6101299A (en) | 1998-06-05 | 2000-08-08 | Astarte Fiber Networks, Inc. | Optical switch targeting system |
US6020272A (en) | 1998-10-08 | 2000-02-01 | Sandia Corporation | Method for forming suspended micromechanical structures |
JP3993343B2 (en) | 1999-06-29 | 2007-10-17 | 富士通株式会社 | Galvano micro mirror |
US6229640B1 (en) * | 1999-08-11 | 2001-05-08 | Adc Telecommunications, Inc. | Microelectromechanical optical switch and method of manufacture thereof |
US6201631B1 (en) | 1999-10-08 | 2001-03-13 | Lucent Technologies Inc. | Process for fabricating an optical mirror array |
US6253001B1 (en) | 2000-01-20 | 2001-06-26 | Agilent Technologies, Inc. | Optical switches using dual axis micromirrors |
US6396975B1 (en) | 2000-01-21 | 2002-05-28 | Jds Uniphase Corporation | MEMS optical cross-connect switch |
-
2000
- 2000-02-01 US US09/497,270 patent/US20020071169A1/en not_active Abandoned
-
2001
- 2001-02-01 WO PCT/US2001/003357 patent/WO2001056919A2/en active Application Filing
- 2001-02-01 AU AU2001233228A patent/AU2001233228A1/en not_active Abandoned
- 2001-08-14 US US09/929,900 patent/US6563106B1/en not_active Expired - Lifetime
Cited By (150)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070001247A1 (en) * | 2000-12-07 | 2007-01-04 | Patel Satyadev R | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
US7573111B2 (en) * | 2000-12-07 | 2009-08-11 | Texas Instruments Incorporated | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
US6618184B2 (en) * | 2001-04-03 | 2003-09-09 | Agere Systems Inc. | Device for use with a micro-electro-mechanical system (MEMS) optical device and a method of manufacture therefor |
US20020141690A1 (en) * | 2001-04-03 | 2002-10-03 | Sungho Jin | Mirror for use with a micro-electro-mechanical system (MEMS) optical device and a method of manufacture therefor |
US6704475B2 (en) | 2001-04-03 | 2004-03-09 | Agere Systems Inc. | Mirror for use with a micro-electro-mechanical system (MEMS) optical device and a method of manufacture therefor |
US20040063325A1 (en) * | 2002-01-11 | 2004-04-01 | Masami Urano | Semiconductor device having MEMS |
US7092140B2 (en) | 2002-06-19 | 2006-08-15 | Miradia Inc. | Architecture of a reflective spatial light modulator |
US20060131262A1 (en) * | 2002-06-19 | 2006-06-22 | Miradia Inc. | Fabrication of a reflective spatial light modulator |
US7428094B2 (en) | 2002-06-19 | 2008-09-23 | Miradia Inc. | Fabrication of a high fill ratio reflective spatial light modulator with hidden hinge |
US20040004753A1 (en) * | 2002-06-19 | 2004-01-08 | Pan Shaoher X. | Architecture of a reflective spatial light modulator |
US20040069742A1 (en) * | 2002-06-19 | 2004-04-15 | Pan Shaoher X. | Fabrication of a reflective spatial light modulator |
US20040145822A1 (en) * | 2002-06-19 | 2004-07-29 | Pan Shaoher X. | Reflective spatial light modulator |
US20040145795A1 (en) * | 2002-06-19 | 2004-07-29 | Pan Shaoher X. | Architecture of a reflective spatial light modulator |
US20040159631A1 (en) * | 2002-06-19 | 2004-08-19 | Pan Shaoher X. | Fabrication of a reflective spatial light modulator |
US7206110B2 (en) | 2002-06-19 | 2007-04-17 | Miradia Inc. | Memory cell dual protection |
US7118234B2 (en) | 2002-06-19 | 2006-10-10 | Miradia Inc. | Reflective spatial light modulator |
US7022245B2 (en) | 2002-06-19 | 2006-04-04 | Miradia Inc. | Fabrication of a reflective spatial light modulator |
WO2004001717A1 (en) * | 2002-06-19 | 2003-12-31 | Miradia, Inc. | Architecture of a reflective spatial light modulator |
US20050174628A1 (en) * | 2002-06-19 | 2005-08-11 | Miradia Inc. | Memory cell dual protection |
US20080062503A1 (en) * | 2002-06-19 | 2008-03-13 | Miradia Inc. | Fabrication of a high fill ratio reflective spatial light modulator with hidden hinge |
US6992810B2 (en) | 2002-06-19 | 2006-01-31 | Miradia Inc. | High fill ratio reflective spatial light modulator with hidden hinge |
US7034984B2 (en) | 2002-06-19 | 2006-04-25 | Miradia Inc. | Fabrication of a high fill ratio reflective spatial light modulator with hidden hinge |
US20060082862A1 (en) * | 2002-06-19 | 2006-04-20 | Miradia Inc. | High fill ratio reflective spatial light modulator with hidden hinge |
US20040006576A1 (en) * | 2002-07-03 | 2004-01-08 | Sean Colbath | Systems and methods for providing multimedia information management |
EP1400487A3 (en) * | 2002-09-19 | 2004-11-17 | Nippon Telegraph and Telephone Corporation | Semiconductor unit having MEMS |
US7208809B2 (en) | 2002-09-19 | 2007-04-24 | Nippon Telegraph And Telephone Corporation | Semiconductor device having MEMS |
US20060115920A1 (en) * | 2002-09-19 | 2006-06-01 | Masami Urano | Semiconductor device having MEMS |
US7482196B2 (en) | 2002-09-19 | 2009-01-27 | Nippon Telegraph And Telephone Corporation | Method of manufacturing a semiconductor device having MEMS |
EP1400487A2 (en) * | 2002-09-19 | 2004-03-24 | Nippon Telegraph and Telephone Corporation | Semiconductor unit having MEMS |
US7781850B2 (en) | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
US7138293B2 (en) | 2002-10-04 | 2006-11-21 | Dalsa Semiconductor Inc. | Wafer level packaging technique for microdevices |
EP1405821A3 (en) * | 2002-10-04 | 2004-12-22 | Dalsa Semiconductor Inc. | Wafer level packaging technique for microdevices |
US20040067604A1 (en) * | 2002-10-04 | 2004-04-08 | Luc Ouellet | Wafer level packaging technique for microdevices |
EP1405821A2 (en) * | 2002-10-04 | 2004-04-07 | Dalsa Semiconductor Inc. | Wafer level packaging technique for microdevices |
US7723015B2 (en) | 2003-04-15 | 2010-05-25 | Qualcomm Mems Technologies, Inc. | Method for manufacturing an array of interferometeric modulators |
US20070269748A1 (en) * | 2003-04-15 | 2007-11-22 | Idc, Llc. | Method for manufacturing an array of interferometric modulators |
US7095546B2 (en) | 2003-04-24 | 2006-08-22 | Metconnex Canada Inc. | Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays |
US7706044B2 (en) | 2003-05-26 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | Optical interference display cell and method of making the same |
US7221495B2 (en) * | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
US7709964B2 (en) | 2003-09-30 | 2010-05-04 | Qualcomm, Inc. | Structure of a micro electro mechanical system and the manufacturing method thereof |
US20080055699A1 (en) * | 2003-09-30 | 2008-03-06 | Qualcomm Mems Technologies, Inc | Structure of a micro electro mechanical system and the manufacturing method thereof |
US20080041817A1 (en) * | 2003-09-30 | 2008-02-21 | Qualcomm Mems Technologies, Inc. | Structure of a micro electro mechanical system and the manufacturing method thereof |
US20050078348A1 (en) * | 2003-09-30 | 2005-04-14 | Wen-Jian Lin | Structure of a micro electro mechanical system and the manufacturing method thereof |
US7026695B2 (en) | 2003-11-19 | 2006-04-11 | Miradia Inc. | Method and apparatus to reduce parasitic forces in electro-mechanical systems |
US20050104144A1 (en) * | 2003-11-19 | 2005-05-19 | Xhp Microsystems, Inc. | Method and apparatus to reduce parasitic forces in electro-mechanical systems |
US7428353B1 (en) | 2003-12-02 | 2008-09-23 | Adriatic Research Institute | MEMS device control with filtered voltage signal shaping |
US20080061026A1 (en) * | 2003-12-02 | 2008-03-13 | Adriatic Research Institute | Gimbal-less micro-electro-mechanical-system tip-tilt and tip-tilt-piston actuators and a method for forming the same |
US8043513B2 (en) | 2003-12-02 | 2011-10-25 | Adriatic Research Institute | Gimbal-less micro-electro-mechanical-system tip-tilt and tip-tilt-piston actuators and a method for forming the same |
US7295726B1 (en) | 2003-12-02 | 2007-11-13 | Adriatic Research Institute | Gimbal-less micro-electro-mechanical-system tip-tilt and tip-tilt-piston actuators and a method for forming the same |
US7449284B2 (en) | 2004-05-11 | 2008-11-11 | Miradia Inc. | Method and structure for fabricating mechanical mirror structures using backside alignment techniques |
US20050255666A1 (en) * | 2004-05-11 | 2005-11-17 | Miradia Inc. | Method and structure for aligning mechanical based device to integrated circuits |
US7042619B1 (en) | 2004-06-18 | 2006-05-09 | Miradia Inc. | Mirror structure with single crystal silicon cross-member |
US7369297B2 (en) | 2004-06-18 | 2008-05-06 | Miradia Inc. | Mirror structure with single crystal silicon cross-member |
US20060087717A1 (en) * | 2004-06-18 | 2006-04-27 | Miradia Inc. | Mirror structure with single crystal silicon cross-member |
US7068417B2 (en) | 2004-07-28 | 2006-06-27 | Miradia Inc. | Method and apparatus for a reflective spatial light modulator with a flexible pedestal |
US7570416B2 (en) | 2004-07-28 | 2009-08-04 | Miradia Inc. | Method and apparatus for a reflective spatial light modulator with a flexible pedestal |
US7233428B2 (en) | 2004-07-28 | 2007-06-19 | Miradia Inc. | Method and apparatus for a reflective spatial light modulator with a flexible pedestal |
US20080055709A1 (en) * | 2004-07-28 | 2008-03-06 | Miradia Inc. | Method and apparatus for a reflective spatial light modulator with a flexible pedestal |
US20060023286A1 (en) * | 2004-07-28 | 2006-02-02 | Miradia Inc. | Method and apparatus for a reflective spatial light modulator with a flexible pedestal |
US20060187525A1 (en) * | 2004-07-28 | 2006-08-24 | Miradia Inc. | Method and apparatus for a reflective spatial light modulator with a flexible pedestal |
US20060043918A1 (en) * | 2004-08-27 | 2006-03-02 | Sequence Controls Inc. | Apparatus for controlling heat generation and recovery in an induction motor |
US20060077519A1 (en) * | 2004-09-27 | 2006-04-13 | Floyd Philip D | System and method for providing thermal compensation for an interferometric modulator display |
US7684104B2 (en) | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
US7830589B2 (en) | 2004-09-27 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
US9304316B2 (en) | 2004-11-15 | 2016-04-05 | Apple Inc. | Method and device for scanning light |
US7172921B2 (en) | 2005-01-03 | 2007-02-06 | Miradia Inc. | Method and structure for forming an integrated spatial light modulator |
US20060148121A1 (en) * | 2005-01-03 | 2006-07-06 | Miradia Inc. | Method and structure for forming an integrated spatial light modulator |
US20100109102A1 (en) * | 2005-01-03 | 2010-05-06 | Miradia Inc. | Method and structure for forming a gyroscope and accelerometer |
US8530259B2 (en) | 2005-01-03 | 2013-09-10 | Miradia Inc. | Method and structure for forming a gyroscope and accelerometer |
US8207004B2 (en) | 2005-01-03 | 2012-06-26 | Miradia Inc. | Method and structure for forming a gyroscope and accelerometer |
US7670880B2 (en) | 2005-01-03 | 2010-03-02 | Miradia Inc. | Method and structure for forming an integrated spatial light modulator |
US7199918B2 (en) | 2005-01-07 | 2007-04-03 | Miradia Inc. | Electrical contact method and structure for deflection devices formed in an array configuration |
US20060152794A1 (en) * | 2005-01-07 | 2006-07-13 | Miradia Inc. | Method and structure for reducing parasitic influences of deflection devices on spatial light modulators |
US20060152795A1 (en) * | 2005-01-07 | 2006-07-13 | Miradia Inc. | Electrical contact method and structure for deflection devices formed in an array configuration |
US7142349B2 (en) | 2005-01-07 | 2006-11-28 | Miradia Inc. | Method and structure for reducing parasitic influences of deflection devices on spatial light modulators |
US7432629B2 (en) | 2005-02-16 | 2008-10-07 | Jds Uniphase Corporation | Articulated MEMs structures |
US20060222312A1 (en) * | 2005-02-16 | 2006-10-05 | Mohiuddin Mala | Articulated MEMs structures |
US7457033B2 (en) * | 2005-05-27 | 2008-11-25 | The Regents Of The University Of California | MEMS tunable vertical-cavity semiconductor optical amplifier |
US20060268398A1 (en) * | 2005-05-27 | 2006-11-30 | The Regents Of The University Of California | MEMS tunable vertical-cavity semiconductor optical amplifier |
US7298539B2 (en) | 2005-06-01 | 2007-11-20 | Miradia Inc. | Co-planar surface and torsion device mirror structure and method of manufacture for optical displays |
US20060274397A1 (en) * | 2005-06-01 | 2006-12-07 | Miradia Inc. | Co-planar surface and torsion device mirror structure and method of manufacture for optical displays |
US7382519B2 (en) | 2005-06-01 | 2008-06-03 | Miradia, Inc. | Method and device for fabricating a release structure to facilitate bonding of mirror devices onto a substrate |
US7202989B2 (en) | 2005-06-01 | 2007-04-10 | Miradia Inc. | Method and device for fabricating a release structure to facilitate bonding of mirror devices onto a substrate |
US7190508B2 (en) | 2005-06-15 | 2007-03-13 | Miradia Inc. | Method and structure of patterning landing pad structures for spatial light modulators |
US7184195B2 (en) | 2005-06-15 | 2007-02-27 | Miradia Inc. | Method and structure reducing parasitic influences of deflection devices in an integrated spatial light modulator |
US7875485B2 (en) | 2005-07-22 | 2011-01-25 | Qualcomm Mems Technologies, Inc. | Methods of fabricating MEMS devices having overlying support structures |
US7936031B2 (en) | 2005-07-22 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS devices having support structures |
US7679812B2 (en) | 2005-07-22 | 2010-03-16 | Qualcomm Mems Technologies Inc. | Support structure for MEMS device and methods therefor |
US20100019336A1 (en) * | 2005-07-22 | 2010-01-28 | Qualcomm Mems Technologies, Inc. | Mems devices having overlying support structures and methods of fabricating the same |
US8218229B2 (en) | 2005-07-22 | 2012-07-10 | Qualcomm Mems Technologies, Inc. | Support structure for MEMS device and methods therefor |
US8149497B2 (en) | 2005-07-22 | 2012-04-03 | Qualcomm Mems Technologies, Inc. | Support structure for MEMS device and methods therefor |
US20070047900A1 (en) * | 2005-07-22 | 2007-03-01 | Sampsell Jeffrey B | MEMS devices having support structures and methods of fabricating the same |
US7704773B2 (en) | 2005-08-19 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same |
US20070042524A1 (en) * | 2005-08-19 | 2007-02-22 | Lior Kogut | MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same |
US8298847B2 (en) | 2005-08-19 | 2012-10-30 | Qualcomm Mems Technologies, Inc. | MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same |
US7747109B2 (en) | 2005-08-19 | 2010-06-29 | Qualcomm Mems Technologies, Inc. | MEMS device having support structures configured to minimize stress-related deformation and methods for fabricating same |
US7502158B2 (en) | 2005-10-13 | 2009-03-10 | Miradia Inc. | Method and structure for high fill factor spatial light modulator with integrated spacer layer |
US8085458B2 (en) | 2005-10-28 | 2011-12-27 | Qualcomm Mems Technologies, Inc. | Diffusion barrier layer for MEMS devices |
US20100046058A1 (en) * | 2005-10-28 | 2010-02-25 | Qualcomm Mems Technologies, Inc. | Diffusion barrier layer for mems devices |
US7416908B2 (en) * | 2005-12-14 | 2008-08-26 | Spatial Photonics, Inc. | Method for fabricating a micro structure |
US20070134896A1 (en) * | 2005-12-14 | 2007-06-14 | Spatial Photonics, Inc. | Method for fabricating a micro structure |
US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
US8394656B2 (en) | 2005-12-29 | 2013-03-12 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
US20090233395A1 (en) * | 2006-06-14 | 2009-09-17 | Magnachip Semiconductor Ltd. | Package of MEMS device and method for fabricating the same |
US8357560B2 (en) * | 2006-06-14 | 2013-01-22 | Magnachip Semiconductor Ltd. | Package of MEMS device and method for fabricating the same |
US20080018974A1 (en) * | 2006-07-18 | 2008-01-24 | Samsung Electronics Co., Ltd. | Scanner |
US20080025849A1 (en) * | 2006-07-31 | 2008-01-31 | Hitachi, Ltd. | High-Pressure Fuel Pump Control Apparatus for an Internal Combustion Engine |
US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
US20080049292A1 (en) * | 2006-08-24 | 2008-02-28 | Olympus Corporation | Micro-mirror array device |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US8830557B2 (en) | 2007-05-11 | 2014-09-09 | Qualcomm Mems Technologies, Inc. | Methods of fabricating MEMS with spacers between plates and devices formed by same |
US8284475B2 (en) | 2007-05-11 | 2012-10-09 | Qualcomm Mems Technologies, Inc. | Methods of fabricating MEMS with spacers between plates and devices formed by same |
US8068268B2 (en) | 2007-07-03 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | MEMS devices having improved uniformity and methods for making them |
US7745308B2 (en) * | 2008-07-08 | 2010-06-29 | Electronics And Telecommunications Research Institute | Method of fabricating micro-vertical structure |
US20100009514A1 (en) * | 2008-07-08 | 2010-01-14 | Electronics And Telecommunications Research Institute | Method of fabricating micro-vertical structure |
US8427657B2 (en) | 2008-08-08 | 2013-04-23 | Mirrorcle Technologies, Inc. | Device for optical imaging, tracking, and position measurement with a scanning MEMS mirror |
DE102008054784B4 (en) | 2008-12-17 | 2021-09-16 | Robert Bosch Gmbh | Micromirrors |
US10739460B2 (en) | 2010-08-11 | 2020-08-11 | Apple Inc. | Time-of-flight detector with single-axis scan |
US9677878B2 (en) | 2010-08-11 | 2017-06-13 | Apple Inc. | Scanning projectors and image capture modules for 3D mapping |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
CN102496611A (en) * | 2011-12-31 | 2012-06-13 | 上海集成电路研发中心有限公司 | Structure used for integrated circuit (IC) metal interconnection reliability test or micro-electro-mechanical system (MEMS) electrode layer |
US9651417B2 (en) * | 2012-02-15 | 2017-05-16 | Apple Inc. | Scanning depth engine |
US20130207970A1 (en) * | 2012-02-15 | 2013-08-15 | Primesense Ltd. | Scanning depth engine |
AU2013237061B2 (en) * | 2012-03-22 | 2015-11-26 | Apple Inc. | Gimbaled scanning mirror array |
US9435638B2 (en) * | 2012-03-22 | 2016-09-06 | Apple Inc. | Gimbaled scanning mirror array |
AU2016201128B2 (en) * | 2012-03-22 | 2017-05-04 | Apple Inc. | Gimbaled scanning mirror array |
US20140153001A1 (en) * | 2012-03-22 | 2014-06-05 | Primesense Ltd. | Gimbaled scanning mirror array |
US10018723B2 (en) | 2012-07-26 | 2018-07-10 | Apple Inc. | Dual-axis scanning mirror |
US9482863B2 (en) * | 2012-10-23 | 2016-11-01 | Apple Inc. | Production of micro-mechanical devices |
TWI618134B (en) * | 2012-10-23 | 2018-03-11 | 蘋果公司 | Production of micro-mechanical devices |
US9267787B2 (en) | 2013-03-15 | 2016-02-23 | Apple Inc. | Depth scanning with multiple emitters |
US20160320609A1 (en) * | 2013-12-20 | 2016-11-03 | Pioneer Corporation | Driving apparatus |
US9835853B1 (en) | 2014-11-26 | 2017-12-05 | Apple Inc. | MEMS scanner with mirrors of different sizes |
US9784838B1 (en) | 2014-11-26 | 2017-10-10 | Apple Inc. | Compact scanner with gimbaled optics |
US9798135B2 (en) | 2015-02-16 | 2017-10-24 | Apple Inc. | Hybrid MEMS scanning module |
US9525863B2 (en) | 2015-04-29 | 2016-12-20 | Apple Inc. | Time-of-flight depth mapping with flexible scan pattern |
US9897801B2 (en) | 2015-09-30 | 2018-02-20 | Apple Inc. | Multi-hinge mirror assembly |
US9703096B2 (en) | 2015-09-30 | 2017-07-11 | Apple Inc. | Asymmetric MEMS mirror assembly |
US10324171B2 (en) | 2015-12-20 | 2019-06-18 | Apple Inc. | Light detection and ranging sensor |
WO2017171854A1 (en) * | 2016-04-01 | 2017-10-05 | Intel Corporation | Process for creating piezo-electric mirrors in package |
US10969574B2 (en) | 2016-04-01 | 2021-04-06 | Intel Corporation | Process for creating piezo-electric mirrors in package |
US10101578B2 (en) | 2016-06-30 | 2018-10-16 | Stmicroelectronics S.R.L. | Micro-electro-mechanical device having a tiltable structure, with detection of the position of the tiltable structure |
US10725286B2 (en) | 2016-06-30 | 2020-07-28 | Stmicroelectronics S.R.L. | Micro-electro-mechanical device having tiltable structure, with detection of the position of the tiltable structure |
US10298913B2 (en) | 2016-08-18 | 2019-05-21 | Apple Inc. | Standalone depth camera |
US10488652B2 (en) | 2016-09-21 | 2019-11-26 | Apple Inc. | Prism-based scanner |
US20180086630A1 (en) * | 2016-09-27 | 2018-03-29 | Infineon Technologies Ag | Method for processing a monocrystalline substrate and micromechanical structure |
US10611630B2 (en) * | 2016-09-27 | 2020-04-07 | Infineon Technologies Ag | Method for processing a monocrystalline substrate and micromechanical structure |
US11604347B2 (en) | 2019-08-18 | 2023-03-14 | Apple Inc. | Force-balanced micromirror with electromagnetic actuation |
US11726240B2 (en) | 2020-02-14 | 2023-08-15 | Google Llc | Variable mesh low mass MEMS mirrors |
Also Published As
Publication number | Publication date |
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US6563106B1 (en) | 2003-05-13 |
WO2001056919A2 (en) | 2001-08-09 |
AU2001233228A1 (en) | 2001-08-14 |
WO2001056919A3 (en) | 2002-03-28 |
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