CN1294652C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

Info

Publication number
CN1294652C
CN1294652C CNB031255965A CN03125596A CN1294652C CN 1294652 C CN1294652 C CN 1294652C CN B031255965 A CNB031255965 A CN B031255965A CN 03125596 A CN03125596 A CN 03125596A CN 1294652 C CN1294652 C CN 1294652C
Authority
CN
China
Prior art keywords
resin
semiconductor element
mentioned
insulative resin
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031255965A
Other languages
English (en)
Other versions
CN1497713A (zh
Inventor
濑古敏春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Tongrui Microelectronics Technology Co ltd
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of CN1497713A publication Critical patent/CN1497713A/zh
Application granted granted Critical
Publication of CN1294652C publication Critical patent/CN1294652C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894Materials of the insulating layers or coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175Flow barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985Flexible insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

一种半导体器件及其制造方法。半导体器件包括具有按图案形状形成的布线的绝缘性基板、经突起电极电连接该布线的半导体元件、固定该半导体元件的树脂包边。树脂包边至少由包含提高绝缘性树脂相对布线和绝缘性基板的润湿性的树脂防粘弹剂的绝缘性树脂构成;树脂防粘弹剂是界面活性剂。半导体器件的制造方法包括:在绝缘性基板上的布线上,留出装载半导体元件的部位地覆盖阻焊膜的阻焊膜覆盖工序;向包含装载半导体元件的部位的区域涂布绝缘性树脂的绝缘性树脂涂布工序;在涂布的绝缘性树脂上装载半导体元件,并将其突起电极压接到绝缘性基板上的布线上,从而进行电连接的半导体元件加压工序。在绝缘性树脂涂布工序中,至少使用包含提高绝缘性树脂的润湿性的树脂防粘弹剂的绝缘性树脂,通过半导体元件加压工序从半导体元件下方挤压出的绝缘性树脂和存在于半导体元件外周部的绝缘性树脂在半导体元件的侧面形成树脂包边。

Description

半导体器件及其制造方法
技术领域
本发明涉及包括半导体元件的半导体器件及其制造方法,尤其涉及在柔性布线基板上接合并装载半导体元件的叫作COF(Chip On Film)的半导体器件(下面称为COF)及其制造方法。
背景技术
近年来,以便携电话、便携信息终端开始,电子设备的小型化、薄型化、轻量化进展迅速。随之而来的是对于以向这些电子设备上装载的半导体器件开始的所有部件,进行同样的小型化、轻量化、高功能化、高性能化、高密度化。
上述状况中,在半导体器件中,通过在于薄膜的绝缘带上形成布线而构成的布线基板上安装半导体元件,谋求形状的高密度化,同时实现薄型化和轻量化。
作为上述半导体器件,已知有TCP(Tape Carrier Package)、COF。COF没有用于装载半导体元件的开口部,将半导体元件接合装载在薄膜的绝缘带上。COF中,由于其使用目的,可使用能够自由弯折的薄膜绝缘带。在该薄膜绝缘带的表面上按图案形状形成布线,成为柔性布线基板。图案形状的布线与半导体元件具有的突起电极电连接。外部连接用的连接器部连接于液晶屏、印刷基板等上。
制造过程中,按图案形状形成的布线的除上述半导体元件和外部连接用的连接器部以外的露出部通过涂布阻焊膜确保绝缘状态。
作为上述COF的制造方法之一,有通过使用MBB(Micro Bump Bonding)、近年来颇受关注的NCP(Non Conductive Paste)、或ACP(AnisotropicConductive Paste)的连接进行的树脂密封方法。这些是在多插脚、狭间距和边缘接触方面有效的技术,是在半导体元件和柔性布线基板之间插入绝缘性树脂、连接半导体元件的突起电极与柔性布线基板上的布线且进行树脂密封的方法。
作为已有的使用MBB技术的COF的制造方法,已知例如①日本专利公报特公平2-7180(1990年2月15日公告)、②日本专利公报特公平7-77227(1995年8月16日公告)中所公开的技术。
上述①的技术中,如图3(a)所示,首先,通过向在绝缘带1上形成图案形状的布线2而构成的布线基板20涂布阻焊膜5来覆盖布线2。但是,在连接半导体元件的部位(称为连接部4)和上述连接器部上不涂布阻焊膜5。
接着如图3(b)所示,在连接部4涂布绝缘性树脂14,如图3(c)所示,位置配合半导体元件3的突起电极(凸块)6和布线2的连接部4,如箭头A所示,从上方对半导体元件3加压。通过该加压,如箭头B所示,从半导体元件3的下部开始,绝缘性树脂14被压宽,突起电极6和布线2的连接部4电连接地进行接触,并且将绝缘性树脂14挤出到半导体元件3的周边。
之后如图3(d)所示,上述状态下,通过硬化绝缘性树脂14,将半导体元件3固定于布线基板20上。作为上述绝缘性树脂14,一般使用光硬化树脂或热硬化树脂,因此如箭头D所示,通过光照射或加热来硬化上述绝缘性树脂14。
接着上述②的技术中,如图4(a)~图4(c)所示,到位置配合半导体元件3的突起电极6和布线2的连接部4、从半导体元件3的上方进行加压之前,都与前述①的技术相同。但是如图4(d)所示,在对半导体元件3加压的状态下,又如箭头C所示,将电流通过脉冲加热工具,加热半导体元件3。由此,硬化绝缘性树脂14,在将半导体元件3的突起电极6电连接布线2的连接部4的状态下,将半导体元件3固定在布线基板20上。
但是,上述已有技术中,存在树脂密封的强度和可靠性降低的问题。由于绝缘性树脂堆积到加压或加热半导体元件的工具上而造成制造过程上的问题。因此,上述已有技术做为树脂密封技术并不充分。
具体说,上述①的技术和②的技术都如图3(c)或图4(c)所示,通过位置配合半导体元件3的突起电极6和布线2的连接部4并从半导体元件3的上方进行加压,将绝缘性树脂14压宽到半导体元件3的外围。
因此,在绝缘性树脂14的涂布量少的情况下,出现由于其润湿性小,即便对半导体元件3加压,绝缘性树脂14不会加宽,在半导体元件3附近滞留下来的如箭头E所示的树脂粘弹现象。其结果是位于半导体元件3的外侧的布线2容易在阻焊膜5的内侧露出。而且,在半导体元件3的侧面形成的用于固定半导体元件3的树脂包边减小。也就是,树脂密封的强度和可靠性降低。
另一方面,增多绝缘性树脂14的涂布量时,绝缘性树脂14容易到达阻焊膜5,因此解决了布线2露出等的问题。但是,由于如箭头E所示的树脂粘弹性,在压接半导体元件3的突起电极6和布线2的连接部4时,如箭头F所示,绝缘性树脂14堆积到半导体元件3的侧面。其结果是产生在对半导体元件3加热和加压的工具上附着绝缘性树脂14的问题。
尤其,近年来,谋求半导体器件的薄型化,对应此,半导体器件的厚度也减小,因此如上述箭头F所示的树脂堆积成为更大的一个问题。
发明内容
本发明考虑上述问题作出,其目的是提供一种谋求树脂密封的强度和可靠性提高的同时也能够避免绝缘性树脂堆积造成的制造过程中的问题产生的高性能高品质的半导体器件及其制造方法。
为达到上述目的,本发明提供一种半导体器件,包括具有按图案形状形成的布线的绝缘性基板、经突起电极电连接该布线的半导体元件、固定该半导体元件的树脂包边,其特征在于,上述树脂包边至少由包含提高绝缘性树脂相对布线和绝缘性基板的润湿性的树脂防粘弹剂的绝缘性树脂构成;上述树脂防粘弹剂是界面活性剂。
根据上述结构,使用包含树脂防粘弹剂的树脂形成绝缘性树脂,因此将半导体元件电接合布线时,可防止位于半导体元件外侧的布线在阻焊膜内侧露出来。与此同时,可增大从半导体元件的下方开始形成在周围的树脂包边的尺寸。即,可加强树脂包边对半导体元件和绝缘性基板的接合。
其结果是可提高树脂密封的强度和可靠性。制造过程中,对半导体元件加压并连接布线时,可防止绝缘性树脂堆积在半导体元件侧面并附着在对半导体元件加压加热的工具上。其结果是也可避免制造过程中产生问题。
为达到上述目的,本发明还提供一种半导体器件的制造方法,其特征在于,包括:在形成于绝缘性基板上的布线上,留出装载半导体元件的部位地覆盖阻焊膜的阻焊膜覆盖工序;在该阻焊膜覆盖工序后,向包含装载半导体元件的部位的区域涂布绝缘性树脂的绝缘性树脂涂布工序;通过在涂布的绝缘性树脂上装载半导体元件,并将该半导体元件具有的突起电极压接到绝缘性基板上的布线上,从而将上述突起电极和上述布线电连接的半导体元件加压工序;在上述绝缘性树脂涂布工序中,至少使用包含提高绝缘性树脂相对布线和绝缘性基板的润湿性的树脂防粘弹剂的绝缘性树脂,并且,如下地进行绝缘性树脂的涂布,即,通过上述半导体元件加压工序从半导体元件下方挤压出的绝缘性树脂和存在于半导体元件外周部的绝缘性树脂在半导体元件的侧面形成树脂包边;使用界面活性剂作为上述树脂防粘弹剂。
根据上述方法,在绝缘性树脂涂布工序中,通过涂布包含树脂防粘弹剂的树脂,在之后的半导体元件加压工序中,可防止位于半导体元件外侧的布线在阻焊膜内侧露出,同时可增大从半导体元件下方开始在周围形成的树脂包边的尺寸。即,可加强树脂包边(fillet)对半导体元件和绝缘性基板的接合。
其结果是可提高树脂密封的强度和可靠性。制造过程中,对半导体元件加压并连接布线时,可防止绝缘性树脂堆积在半导体元件侧面而附着在半导体元件的加压加热工具上。其结果是也可避免制造过程中产生问题地来制造半导体器件。
本发明的其他目的、特征和优点从下面所示记载变得非常明显。本发明的优点在参考附图的下面说明中变得明了。
附图说明
图1(a)是表示本发明的半导体器件的一个例子的简要截面图;
图1(b)是表示本发明的半导体器件的一个例子的简要截面图;
图1(c)是表示本发明的半导体器件的一个例子的简要截面图;
图1(d)是表示本发明的半导体器件的一个例子的简要截面图;
图1(e)是表示本发明的半导体器件的一个例子的简要截面图;
图2(a)是表示本发明的半导体器件的另一个例子的简要截面图;
图2(b)是表示本发明的半导体器件的另一个例子的简要截面图;
图2(c)是表示本发明的半导体器件的另一个例子的简要截面图;
图2(d)是表示本发明的半导体器件的另一个例子的简要截面图;
图2(e)是表示本发明的半导体器件的另一个例子的简要截面图;
图3(a)是表示原来的半导体器件的一个例子的简要截面图;
图3(b)是表示原来的半导体器件的一个例子的简要截面图;
图3(c)是表示原来的半导体器件的一个例子的简要截面图;
图3(d)是表示原来的半导体器件的一个例子的简要截面图;
图4(a)是表示原来的半导体器件的另一个例子的简要截面图;
图4(b)是表示原来的半导体器件的另一个例子的简要截面图;
图4(c)是表示原来的半导体器件的另一个例子的简要截面图;
图4(d)是表示原来的半导体器件的另一个例子的简要截面图。
具体实施方式
[实施例1]
根据图1(a)~图1(e)说明本发明的一个实施例,如下所示。本发明不限定于此。
本发明的半导体器件在绝缘性基板上具有按图案形状形成的布线,而且经突起电极将半导体元件电连接该布线,还在该半导体元件与绝缘性基板之间以及半导体元件的周围形成树脂层和树脂包边,在该半导体器件中,使用包含调节绝缘性树脂的润湿性的树脂防粘弹剂的绝缘性树脂来形成上述树脂包边。
更具体说,如图1(e)所示,本实施例的半导体器件包括布线基板20、半导体元件3、树脂包边11等。
布线基板20由作为绝缘性基板的绝缘带1、在其表面上形成的图案状的布线2以及阻焊膜5构成。上述绝缘带1具有绝缘性,只要在其表面上可形成图案状的布线2,就不对其特别限定,但最好是可自由弯折。具体说,最好使用聚酰亚胺、聚酰亚胺薄膜等的聚酰亚胺族绝缘带。聚酰亚胺族绝缘带的厚度不特别限定,但为确保高的柔软性,最好是薄的。具体说,最好在15~40μm的范围内,更具体说,例如最好采用15μm、20μm、25μm、38μm或40μm的厚度。
作为上述图案形状的布线2,对应半导体器件的构成和用途适当按图案形状形成,只要具有导电性,不特别限定,例如可举出金属薄膜构成的布线。该布线2中使用的金属不特别限定,最好使用铜。布线2最好是薄膜状,更好是使用铜箔,其厚度通常在5~18μm的范围内较好,更具体说,最好使用例如5μm、8μm、9μm、12μm、或18μm厚度的配线。
另外,上述布线2由铜箔形成的情况下,为防止布线2恶化,其表面最好进行镀覆。作为镀覆金属,不特别限定,但最好使用锡镀、金镀等。为方便说明,图1(a)~图1(e)中未记载镀覆。
上述绝缘带1上形成图案形状的布线2的方法和布线2的表面上实施镀覆的方法不特别限定,最好使用原来公知的方法。
如上所述,使用薄型的可自由弯折的布线基板20,则可制造COF型半导体器件。
上述COF、TCP等是在柔性布线基板上接合装载半导体元件的结构的半导体器件,尤其是更好地应用于液晶显示装置中。具体说,通过将液晶驱动器IC作为半导体元件装载,可将上述COF、TCP作为驱动液晶屏的液晶驱动器。通过将该液晶驱动器与液晶屏组合,形成液晶模块,可装载在各种电子设备上,作为显示部。
这里,TCP在绝缘带上的装载半导体元件的部分中预先设置叫作器件孔的贯通的开口部。并且,在叫作内引线的图案形状的布线的前端部从器件孔按悬臂梁状突出的状态下,电连接内引线和半导体元件。
与此相对,COF在绝缘带上没有用于搭载半导体元件的开口部,与半导体元件具有的电极连接的图案形状的布线成为配置在绝缘带的表面上的状态。
COF可实现比使用作为半导体组件之一的TCP的安装更高的密度化,在复杂空间安装时,是有利的装载方法。
这里,使用已有MBB技术的COF型半导体器件中,如上所述,树脂密封强度和可靠性降低或制造过程上的问题可能会更明显地产生。但是,如后所述,根据本发明,可确实回避这些问题的产生,制造高性能高品质的半导体器件。
本实施例中,使用上述绝缘带1形成布线基板20,但是,本发明当然不限于此,可通过在原来公知的各种绝缘性基板上形成图案形状的布线2而形成布线基板20。
即,本发明的适用范围并不仅仅限定于COF型的半导体器件,可广泛应用于在形成图案形状的布线的绝缘性基板上装载半导体元件的结构的半导体器件中。
上述半导体元件3只要是包含对应半导体器件的用途的各种集成电路的结构,不特别限定,可使用原来公知的半导体芯片或IC等。
这里,上述半导体元件3上形成突起电极6。该突起电极6电连接半导体元件3和布线2。作为上述突起电极6,最好使用例如凸块等,但不特别限定于此。作为突起电极(凸块)6的材质,只要是具有导电性并能与布线2良好连接的材质,不作特别限定。例如,最好使用金等。布线2中,下面将实现和突起电极6电连接的部位叫作连接部4。
布线基板20中,除连接部4和未示出的外部连接用的连接器部以外都涂布阻焊膜5。换言之,布线2中的连接部4和连接器部附近未被阻焊膜5覆盖而是露出的,使得在制造过程中,可将半导体元件3的突起电极6与外部的设备部分相连接。
该阻焊膜5通过在印刷布线板上的特定区域上实施的耐热性覆盖材料确保图案形状的布线2的绝缘状态。作为阻焊膜5的具体种类,并不特别限定,可适当地使用公知的种类。
上述树脂包边11由绝缘性树脂构成,将半导体元件3经突起电极6电连接于布线2的连接部4的状态下进行固定。本实施例中,该树脂包边11由包含树脂防粘弹剂的绝缘性树脂7构成。
作为包含上述树脂防粘弹剂的绝缘性树脂7使用的绝缘性树脂只要是可将半导体元件3的突起电极6以外的部分与布线2之间进行绝缘的树脂就不特别限定。本发明中,最好使用光硬化树脂或热硬化树脂。使用这些树脂的话,通过照射光或加热可容易地将包含树脂防粘弹剂的绝缘性树脂7硬化。
上述光硬化树脂或热硬化树脂的更具体例子不特别限定,但可适当地使用例如环氧树脂、丙烯酸树脂等。
上述树脂防粘弹剂是调节绝缘性树脂的润湿性的物质。关于树脂防粘弹剂,与后述的本发明的半导体器件的制造方法一起说明。
本实施例的半导体器件中,虽未示出,但布线2中的外部连接用的连接器部上连接液晶屏、印刷基板等的各种设备部分。该连接器部的构成也不特别限定,可对应连接的设备部件的种类选择适当结构。
本实施例的半导体器件的制造方法包含阻焊膜覆盖工序、绝缘性树脂涂布工序和半导体元件加压工序。
如图1(a)所示,上述阻焊膜覆盖工序是至少对绝缘带1的表面上形成的图案形状的布线2留出装载半导体元件3的部位、即布线2中的连接部4而覆盖阻焊膜5的工序。
形成上述阻焊膜(阻焊层)5时,关于按何种程度留出连接部4,并不作特别限定,只要按能确实连接半导体元件3的突起电极6和布线2的程度露出布线2就可以了。对覆盖布线2地形成阻焊膜5的方法和其条件不特别限定,最好使用原来公知的涂布方法。
如图1(b)所示,上述绝缘性树脂涂布工序是在上述阻焊膜覆盖工序后,向包含上述布线2中的连接部4的区域涂布包含树脂防粘弹剂的绝缘性树脂7的工序。对该工序中实施的包含树脂防粘弹剂的绝缘性树脂7的涂布方法不特别限定,只要涂布成在之后的半导体元件加压工序中,由从半导体元件3的下方挤压出的包含树脂防粘弹剂的绝缘性树脂7和在半导体原件外围部存在的包含树脂防粘弹剂的绝缘性树脂7在半导体元件3的侧面上形成树脂包边11就可以。具体说,可适当使用原来公知的涂布方法。
这里,对作为涂布包含树脂防粘弹剂的绝缘性树脂7的区域的“包含连接部4的区域”不特别具体限定。至少是使包含树脂防粘弹剂的绝缘性树脂7接触周围的阻焊膜5、或部分覆盖在阻焊膜5上、或通过涂布到阻焊膜5附近并渗透到阻焊膜5而覆盖在阻焊膜5上的那样区域。
如上所述,在接触阻焊膜5或覆盖其一部分地涂布包含树脂防粘弹剂的绝缘性树脂7时,可防止位于半导体元件3外侧的布线2在阻焊膜5的内侧,即未形成阻焊膜5的区域中露出。而且,如后所述,在半导体元件加压工序中,可确实形成树脂包边11。
如图1(c)所示,上述半导体元件加压工序是在涂布的包含树脂防粘弹剂的绝缘性树脂7上方装载半导体元件3、通过向布线基板20的表面侧加压(图中箭头A)电连接该半导体元件3的突起电极6和上述布线2的连接部4的工序。
关于对半导体元件3加压的装置(加压装置),不特别限定,可适当使用原来公知的加压工具。尤其,最好使用脉冲加热工具。关于加压条件,不特别限定,只要是通过加压不会损坏半导体元件3并且压出包含树脂防粘弹剂的绝缘性树脂7、可实现使突起电极6与连接部4充分接触的电连接的压力即可。
这里,本实施例中,上述绝缘性树脂涂布工序中,由于至少使用包含上述树脂防粘弹剂的绝缘性树脂7,所以可提高上述绝缘性树脂7的润湿性,可避免种种问题的产生。下面说明绝缘性树脂的润湿性的调节。
固体表面常常与空气接触,通过固体吸附气体,形成固体—气体界面。这里,由于液体直接接触固体,必须排除气体—固体的界面而形成固体—液体的界面。这样,固体—气体界面消失,新产生固体—液体的界面,这叫作润湿。
如上所述,上述树脂包边11通过在布线基板20上涂布包含树脂防粘弹剂的绝缘性树脂7后,从上方对半导体元件3加压,然后硬化包含该树脂防粘弹剂的绝缘性树脂7而形成。
但是,由于原来的绝缘性树脂14(参考图3(c)或图4(c))润湿性小,产生不会拓宽到布线2的表面或阻焊膜5附近的上述的树脂粘弹现象。也就是说,绝缘性树脂14涂布量少时,在未形成阻焊膜的区域中容易露出布线2,同时产生树脂包边11减小的问题。另一方面,涂布量多时,由于上述树脂粘弹,原来的绝缘性树脂14过剩堆积在半导体元件3的侧面,产生在加压和加热工具上附着原来的绝缘性树脂14的问题。
与此相对,本实施例中,由于使用包含上述树脂防粘弹剂的绝缘性树脂7,润湿性提高而难以产生树脂粘弹。所谓该润湿性,指的是绝缘性树脂对布线2、绝缘性基板1或阻焊膜5的润湿容易度。
其结果如图1(d)所示,在半导体元件加压工序中,通过半导体元件3的加压(箭头A)挤压出的包含树脂防粘弹剂的绝缘性树脂7良好地扩展到半导体元件3的周围(箭头B),可避免在未形成阻焊膜的区域中露出布线2。而且,由于难以产生树脂粘弹,可抑制上述堆积,其结果是在不接触加压和加热工具的程度下,在半导体元件3的侧面上适度堆积包含树脂防粘弹剂的绝缘性树脂7,可形成良好的树脂包边11。
对本实施例使用的树脂防粘弹剂只要是调节绝缘性树脂的润湿性的物质,就不特别限定,但具体说,最好使用界面活性剂。通过将界面活性剂用作树脂防粘弹剂,可避免产生绝缘性树脂的树脂粘弹。其结果是可提高树脂密封强度和可靠性,同时有效避免制造过程中的问题。
上述界面活性剂对应绝缘性树脂的种类适当选择,对其种类、含量等不特别限定。
本实施例的半导体器件的制造方法中,在半导体元件加压工序后,实施将形成树脂包边11的包含树脂防粘弹剂的绝缘性树脂7硬化的树脂硬化工序。对树脂硬化工序的树脂硬化条件不特别限定,可对应选择作为包含树脂防粘弹剂的绝缘性树脂7的树脂的种类而设定适当条件。本实施例中,用作包含上述树脂防粘弹剂的绝缘性树脂7的绝缘性树脂最好使用光硬化树脂或热硬化树脂,因此树脂硬化工序中,通过对由包含树脂防粘弹剂的绝缘性树脂7形成的树脂包边11照射光,或根据情况通过布线基板20将光照射到半导体元件3和布线基板20之间的绝缘性树脂7,或加热树脂即可。
例如,使用热硬化树脂的情况下,在对半导体元件3加压的状态下,如图1(e)所示,例如将环氧树脂用作热硬化树脂的情况下,用脉冲加热工具加热到230~250℃的范围内(图中箭头C)。由此,树脂硬化,可将半导体元件3在电连接的状态下固定在布线基板20的表面上。
这样,本发明中,使用包含树脂防粘弹剂的树脂形成树脂包边11,因此在将半导体元件电接合于布线时,可防止位于半导体元件外侧的布线在阻焊膜内侧露出,同时增大从半导体元件的下方开始形成在周围的树脂包边的尺寸。其结果是,可加强树脂密封强度和可靠性。
制造过程中,对半导体元件加压并连接布线时,可防止绝缘性树脂堆积在半导体元件侧面并附着在对半导体元件加压加热的工具上。其结果是也可避免制造过程中产生问题。
因此,本发明可适合用于制造COF型的半导体器件的领域,另外,可适合用于制造使用该COF型的半导体器件的各种电子仪器,例如便携电话、便携信息终端、液晶显示用屏等的领域中。
[实施例2]
根据图2(a)~(e)说明本发明的另一实施例,如下所述。本发明不限于此。为方便说明,将具有与上述实施例1中说明的构成要素相同功能的构成要素附加相同符号并省略其说明。
上述实施例1中,树脂包边11由包含树脂防粘弹剂的绝缘性树脂7构成,但本实施例中,如图2(e)所示,树脂包边11由包含树脂防粘弹剂并分散了导电性粒子21的绝缘性树脂12构成。
如果在形成树脂包边11的包含树脂防粘弹剂的绝缘性树脂12中分散导电性粒子21,则经导电性粒子21可连接半导体元件3的突起电极6和绝缘带1上的布线2的连接部4。其结果是可更确实电连接半导体元件3和布线2。
对作为本发明使用的上述导电性粒子21不特别限定,但具体说,最好使用金涂层树脂粒子、镍粒子等。
对包含树脂防粘弹剂的绝缘性树脂12中分散导电性粒子21的方法不特别限定,可在硬化前的包含树脂防粘弹剂的绝缘性树脂中添加导电性粒子21并用公知的方法混合。关于将导电性粒子21分散到包含树脂防粘弹剂的绝缘性树脂12中的状态不特别限定,对应导电性粒子21的种类、粒径等,向包含规定量的树脂防粘弹剂的绝缘性树脂中添加适量的导电性粒子21并进行充分混合即可。
接着说明本实施例的半导体器件的制造方法。如图2(a)~图2(e)所示,本实施例的制造方法中,与上述实施例1同样,具有阻焊膜覆盖工序、绝缘性树脂涂布工序、半导体元件加压工序、树脂硬化工序。并且,各工序中的操作也与上述实施例1同样。但是,如图2(b)~图2(e)所示,使用包含上述树脂防粘弹剂并且分散有导电性粒子21的绝缘性树脂12来制造半导体器件这一点不同。如果使用这种包含树脂防粘弹剂并且分散有导电性粒子21的绝缘性树脂12,则可如图2(e)所示,例如在部件序号13表示的连接部分中,经导电性粒子21使半导体元件3电连接布线2,制造半导体器件。
这样,本实施例的半导体器件及其制造方法中,至少使用包含树脂防粘弹剂的绝缘性树脂即可。另外,为了提高半导体元件3和布线2的连接可靠性,也可像上述导电性粒子21一样,在绝缘性树脂中包含其他材料。
以上实施例1和2所示的本发明的半导体器件除上述结构外,上述绝缘性基板还可以是可弯折的绝缘带。
原来的使用MBB技术的COF型的半导体器件中,可能更明显地产生树脂密封强度或可靠性降低或制造过程中的问题。但是,根据上述结构,可更确实避免这些问题的产生,提供高性能高品质的半导体器件。
另外,本发明的半导体器件除上述结构外,上述树脂防粘弹剂可以是界面活性剂。
根据上述结构,通过将界面活性剂用作树脂防粘弹剂,可避免绝缘性树脂的树脂粘弹的产生。其结果是可提高树脂密封强度和可靠性的同时,也可有效避免产生制造过程中的问题。
此外,本发明的半导体器件除上述结构外,上述绝缘性树脂可以是光硬化树脂或热硬化树脂。
根据上述结构,通过照射光或施加热量,容易硬化绝缘性树脂。因此,可用简单的制造过程提高树脂密封的强度和可靠性。
此外,本发明的半导体器件除上述结构外还可在上述绝缘性树脂中分散导电性粒子。
根据上述结构,由于在绝缘性树脂中分散有导电性粒子,经导电性粒子可连接半导体元件和绝缘性基板上的布线。其结果是可更确实电连接半导体元件和布线。
还有,本发明的半导体器件的制造方法除上述方法外,可以是将可弯折的绝缘带用作上述绝缘性基板的制造方法。
在原来的使用MBB技术的COF型的半导体器件中,可能更明显地产生树脂密封强度或可靠性降低或制造过程中的问题。但是,根据上述方法,可更确实避免这些问题的产生,制造高性能高品质的半导体器件。
此外,本发明的半导体器件的制造方法在上述绝缘性树脂涂布工序中,可将包含树脂防粘弹剂的绝缘性树脂涂布成与周围的阻焊膜接触或部分覆盖在阻焊膜上、或者也可通过将其涂布到阻焊膜附近并渗透到阻焊膜而覆盖在阻焊膜上。
根据上述方法,与阻焊膜接触、或覆盖其一部分地涂布绝缘性树脂、或通过涂布到阻焊膜附近并渗透到阻焊膜而覆盖在阻焊膜上地涂布绝缘性树脂。因此,可更确实防止位于半导体元件外侧的布线在阻焊膜内侧露出,同时,在半导体元件加压工序中,可确实形成树脂包边来制造半导体器件。
另外,本发明的半导体器件的制造方法除上述方法外,可将界面活性剂用作上述树脂防粘弹剂。
根据上述方法,通过将界面活性剂用作上述树脂防粘弹剂,可避免绝缘性树脂的树脂粘弹产生。其结果是可提高得到的半导体器件的树脂密封强度和可靠性,同时可有效避免在制造过程中产生问题地来制造半导体器件。
发明的说明书中作出说明的具体实施形式和实施例至多是为了使本发明的内容明了,不应狭义地解释为限定于这种具体例子,在本发明的精神和下面记载的权利要求的范围内,可进行种种变更来实施。

Claims (10)

1.一种半导体器件,包括具有按图案形状形成的布线(2)的绝缘性基板(1)、经突起电极(6)电连接该布线(2)的半导体元件(3)、固定该半导体元件(3)的树脂包边(11),其特征在于,
上述树脂包边(11)至少由包含提高绝缘性树脂(7)相对布线(2)和绝缘性基板(1)的润湿性的树脂防粘弹剂的绝缘性树脂(7)构成;
上述树脂防粘弹剂是界面活性剂。
2.根据权利要求1的半导体器件,其特征在于,上述绝缘性基板(1)是可弯折的绝缘带。
3.根据权利要求1的半导体器件,其特征在于,上述绝缘性树脂(7)是光硬化树脂或热硬化树脂。
4.根据权利要求1的半导体器件,其特征在于,上述绝缘性树脂(7)是分散有导电性粒子(21)的绝缘性树脂(12)。
5.根据权利要求1的半导体器件,其特征在于,上述树脂包边(11)将该半导体元件(3)固定在该绝缘性基板(1)上的。
6.一种半导体器件的制造方法,其特征在于,包括:
在形成于绝缘性基板(1)上的布线(2)上,留出装载半导体元件(3)的部位地覆盖阻焊膜(5)的阻焊膜覆盖工序;
在该阻焊膜覆盖工序后,向包含装载半导体元件(3)的部位的区域涂布绝缘性附脂(7)的绝缘性树脂涂布工序;
通过在涂布的绝缘性树脂(7)上装载半导体元件(3),并将该半导体元件(3)具有的突起电极(6)压接到绝缘性基板(1)上的布线(2)上,从而将上述突起电极(6)和上述布线(2)电连接的半导体元件加压工序;
在上述绝缘性树脂涂布工序中,至少使用包含提高绝缘性树脂(7)相对布线(2)和绝缘性基板(1)的润湿性的树脂防粘弹剂的绝缘性树脂(7),并且,如下地进行绝缘性树脂(7)的涂布,即,通过上述半导体元件加压工序从半导体元件(3)下方挤压出的绝缘性树脂(7)和存在于半导体元件(3)外周部的绝缘性树脂(7)在半导体元件(3)的侧面形成树脂包边(11);
使用界面活性剂作为上述树脂防粘弹剂。
7.根据权利要求6的半导体器件的制造方法,其特征在于,使用可弯折的绝缘带作为上述绝缘性基板(1)。
8.根据权利要求6的半导体器件的制造方法,其特征在于,上述绝缘性树脂涂布工序中,将包含树脂防粘弹剂的绝缘性树脂(7)涂布成与周围的阻焊膜(5)接触、或部分覆盖在阻焊膜(5)上、或通过将其涂布到阻焊膜(5)附近并使之渗透到阻焊膜(5)地覆盖在阻焊膜(5)上。
9.根据权利要求6的半导体器件的制造方法,其特征在于,上述绝缘性树脂(7)是光硬化树脂或热硬化树脂。
10.根据权利要求6的半导体器件,其特征在于,上述绝缘性树脂(7)是在绝缘性树脂中分散有导电性粒子(21)的绝缘性树脂(12)。
CNB031255965A 2002-09-30 2003-09-30 半导体器件及其制造方法 Expired - Fee Related CN1294652C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002287258A JP3847693B2 (ja) 2002-09-30 2002-09-30 半導体装置の製造方法
JP287258/02 2002-09-30
JP287258/2002 2002-09-30

Publications (2)

Publication Number Publication Date
CN1497713A CN1497713A (zh) 2004-05-19
CN1294652C true CN1294652C (zh) 2007-01-10

Family

ID=32025394

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031255965A Expired - Fee Related CN1294652C (zh) 2002-09-30 2003-09-30 半导体器件及其制造方法

Country Status (5)

Country Link
US (1) US7466030B2 (zh)
JP (1) JP3847693B2 (zh)
KR (1) KR100629663B1 (zh)
CN (1) CN1294652C (zh)
TW (1) TWI234831B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106960860A (zh) * 2016-01-11 2017-07-18 三星显示有限公司 柔性显示装置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6943678B2 (en) * 2000-01-24 2005-09-13 Nextreme, L.L.C. Thermoformed apparatus having a communications device
JP2004327920A (ja) * 2003-04-28 2004-11-18 Sharp Corp 半導体装置の製造方法、フレキシブル基板及び半導体装置
JP4024773B2 (ja) * 2004-03-30 2007-12-19 シャープ株式会社 配線基板、半導体装置およびその製造方法並びに半導体モジュール装置
JP4451214B2 (ja) * 2004-05-21 2010-04-14 シャープ株式会社 半導体装置
US11842972B2 (en) 2004-09-28 2023-12-12 Rohm Co., Ltd. Semiconductor device with a semiconductor chip connected in a flip chip manner
JP2006100385A (ja) 2004-09-28 2006-04-13 Rohm Co Ltd 半導体装置
JP4009872B2 (ja) * 2006-03-07 2007-11-21 セイコーエプソン株式会社 半導体装置の製造方法
US7742001B2 (en) * 2008-03-31 2010-06-22 Tdk Corporation Two-tier wide band antenna
JP5410387B2 (ja) * 2010-08-31 2014-02-05 デクセリアルズ株式会社 導電性粒子及びその製造方法、並びに異方性導電フィルム、接合体、及び接続方法
JP5274586B2 (ja) * 2011-01-17 2013-08-28 キヤノン・コンポーネンツ株式会社 フレキシブル回路基板
US9232634B2 (en) 2011-01-17 2016-01-05 Canon Components, Inc. Flexible circuit board for mounting light emitting element, illumination apparatus, and vehicle lighting apparatus
US10879211B2 (en) 2016-06-30 2020-12-29 R.S.M. Electron Power, Inc. Method of joining a surface-mount component to a substrate with solder that has been temporarily secured

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151480A (ja) * 1992-11-13 1994-05-31 Hitachi Chem Co Ltd 導電性樹脂ペーストおよび半導体装置
JPH11315222A (ja) * 1998-05-07 1999-11-16 Sumitomo Chem Co Ltd 水性塗料
GB2345803B (en) * 1997-08-19 2001-06-20 Taiyo Yuden Kk Wire wound electronic component

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1165148A (en) * 1915-03-09 1915-12-21 Francis K Shepherd Paint and varnish remover.
BE759288A (fr) * 1969-11-24 1971-05-24 Int Farm Systems Installation pour cantonner et elever des animaux en milieu ferme
US3734057A (en) * 1971-09-01 1973-05-22 G Lee Pet toilet
US3889881A (en) * 1974-05-29 1975-06-17 Lonnie C Cunningham Liquid dispersal apparatus
GB1571438A (en) * 1977-03-15 1980-07-16 Colgate Palmolive Co Cleaning compositions
US4175515A (en) * 1977-12-05 1979-11-27 Bradley Kenneth M Sanitary unit for confined environmental controlled feeding of hogs
US4424379A (en) * 1982-07-16 1984-01-03 International Flavors & Fragrances Inc. Cyclohexenyl-alpha-alkyl acrolein derivatives
US4834265A (en) * 1984-02-21 1989-05-30 Snyder Stuart D Automatic watering device for decorative plants
US4770878A (en) * 1984-05-02 1988-09-13 Thomas Richard D Mold and dust inhibiting product and method
US4639327A (en) * 1985-06-20 1987-01-27 Mcgaha Larry E Composition and method for cleaning painted surfaces
US4836144A (en) * 1986-09-05 1989-06-06 Cole John B Method and apparatus for washing and treating animals with a recirculating fluid system
US4700887A (en) * 1986-12-29 1987-10-20 Cornell Research Foundation, Inc. Environmental control system for poultry houses
US4773471A (en) * 1988-03-17 1988-09-27 Grant Ace A Integrated water misting heating and cooling system for poultry buildings or the like
JPH027180A (ja) 1988-06-27 1990-01-11 Hitachi Ltd 命令一斉発火方式
US5054434A (en) * 1989-09-27 1991-10-08 W. R. Grace & Co.-Conn. Suppression of ammonia odors from animal wastes
US5656862A (en) * 1990-03-14 1997-08-12 International Business Machines Corporation Solder interconnection structure
US5063880A (en) * 1990-12-03 1991-11-12 Bug Atomateck Inc. Automatic spraying device for farm animals
JPH0777227A (ja) 1991-04-05 1995-03-20 Voith Turbo Gmbh & Co Kg 流体式リターダ
US5233940A (en) * 1992-04-16 1993-08-10 Zonco, Inc. Piglet protection apparatus
US5865143A (en) * 1993-09-30 1999-02-02 Trustees Of University Of Arkansas And United States Of America High-rise laying hen rearing facility and method
US6015099A (en) * 1993-12-10 2000-01-18 Potomac Rain Room, Inc. Method and apparatus for spraying pressurized water
AUPM294993A0 (en) * 1993-12-13 1994-01-13 HADDON, Bruce Alexander A deodorizer
GB9403855D0 (en) * 1994-03-01 1994-04-20 Scotia Holdings Plc Fatty acid derivatives
JP3093621B2 (ja) 1995-01-30 2000-10-03 松下電器産業株式会社 半導体装置の実装方法
US5710071A (en) * 1995-12-04 1998-01-20 Motorola, Inc. Process for underfilling a flip-chip semiconductor device
US5630379A (en) * 1996-02-12 1997-05-20 Ssi Corporation Electrically controlled spraying device for cleaning and treating animals
US6197835B1 (en) * 1996-05-13 2001-03-06 Universidad De Sevilla Device and method for creating spherical particles of uniform size
US5890454A (en) * 1997-01-21 1999-04-06 Trustees Of The University Of Arkansas And The United States Of America Swine rearing facility and method for reducing ammonia and odors therein
DE69934153T2 (de) 1998-02-02 2007-09-20 Shin-Etsu Chemical Co., Ltd. Verfahren zur Montage von Flip-Chip-Halbleiterbauelementen
US5953814A (en) * 1998-02-27 1999-09-21 Delco Electronics Corp. Process for producing flip chip circuit board assembly exhibiting enhanced reliability
JP2000294894A (ja) 1998-12-21 2000-10-20 Seiko Epson Corp 回路基板およびその製造方法ならびに回路基板を用いた表示装置および電子機器
US6230660B1 (en) * 1999-06-23 2001-05-15 John Stuart Greeson Apparatus for controlling insects on an animal
US6194470B1 (en) * 1999-08-06 2001-02-27 Bath & Body Works, Inc. Sparkle linen spray
US6302161B1 (en) * 2000-01-11 2001-10-16 Larry D. Heller Process for mixing, diluting and dispensing water dilutable formulations of insecticides utilizing an injector system
JP3536023B2 (ja) * 2000-10-13 2004-06-07 シャープ株式会社 Cof用テープキャリアおよびこれを用いて製造されるcof構造の半導体装置
KR100928124B1 (ko) 2001-01-29 2009-11-24 우베 고산 가부시키가이샤 Cof 실장용 언더필재 및 전자부품
JP3696512B2 (ja) 2001-02-13 2005-09-21 シャープ株式会社 表示素子駆動装置およびそれを用いた表示装置
JP2002270652A (ja) 2001-03-09 2002-09-20 Hitachi Cable Ltd テープキャリア及びそれを用いた半導体装置
JP3716237B2 (ja) 2002-08-19 2005-11-16 ナミックス株式会社 封止剤樹脂組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151480A (ja) * 1992-11-13 1994-05-31 Hitachi Chem Co Ltd 導電性樹脂ペーストおよび半導体装置
GB2345803B (en) * 1997-08-19 2001-06-20 Taiyo Yuden Kk Wire wound electronic component
JPH11315222A (ja) * 1998-05-07 1999-11-16 Sumitomo Chem Co Ltd 水性塗料

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106960860A (zh) * 2016-01-11 2017-07-18 三星显示有限公司 柔性显示装置
CN106960860B (zh) * 2016-01-11 2022-03-04 三星显示有限公司 柔性显示装置

Also Published As

Publication number Publication date
US7466030B2 (en) 2008-12-16
TW200408025A (en) 2004-05-16
TWI234831B (en) 2005-06-21
KR20040028522A (ko) 2004-04-03
US20040061240A1 (en) 2004-04-01
KR100629663B1 (ko) 2006-09-29
JP3847693B2 (ja) 2006-11-22
JP2004128056A (ja) 2004-04-22
CN1497713A (zh) 2004-05-19

Similar Documents

Publication Publication Date Title
CN1143375C (zh) 半导体装置及其制造方法、电路基板和电子装置
CN1114946C (zh) 半导体装置及其制造方法和其测试方法
CN1207785C (zh) 半导体器件、电子装置的制造方法、电子装置和携带式信息终端
CN1265455C (zh) 半导体器件及其制造方法
CN100533701C (zh) 使用了导电性粒子的倒装片安装方法
KR100781827B1 (ko) 반도체 패키지 및 그 제조 방법
CN1294652C (zh) 半导体器件及其制造方法
CN1835661A (zh) 配线基板的制造方法
CN1340851A (zh) 电子器件及其制造方法
CN1185698C (zh) 半导体装置及其制造方法、电路板以及电子设备
CN1135610C (zh) 各向异性导电膜和半导体芯片的安装方法以及半导体装置
CN1338775A (zh) 半导体装置及其制造方法、电路基板以及电子装置
CN1835654A (zh) 配线基板及其制造方法
CN1767177A (zh) 半导体器件以及电子设备
CN1805657A (zh) 配线电路基板
CN1838859A (zh) 柔性印刷线路板及其制造方法、和半导体装置
CN1815733A (zh) 半导体装置及其制造方法
CN1702857A (zh) 半导体器件及其制造方法
CN1311528A (zh) 半导体器件及其制造方法、电路板和电子装置
CN1819133A (zh) 半导体装置的制造方法以及电连接部的处理方法
CN1320846C (zh) 电路基板及其制造方法
CN1674242A (zh) 半导体芯片、半导体装置、半导体装置的制造方法
CN1191619C (zh) 电路装置及其制造方法
CN1663328A (zh) 电路基板装置及基板间的连接方法
CN1254856C (zh) 电路装置的制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20200929

Address after: 1437, Hangdu building, 1006 Huafu Road, Huahang community, Huaqiang North Street, Futian District, Shenzhen City, Guangdong Province

Patentee after: Shenzhen Tongrui Microelectronics Technology Co.,Ltd.

Address before: Osaka, Japan

Patentee before: Sharp Corp.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070110

CF01 Termination of patent right due to non-payment of annual fee