WO2013112803A3 - Multiple energization elements in stacked integrated component devices - Google Patents

Multiple energization elements in stacked integrated component devices Download PDF

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Publication number
WO2013112803A3
WO2013112803A3 PCT/US2013/023097 US2013023097W WO2013112803A3 WO 2013112803 A3 WO2013112803 A3 WO 2013112803A3 US 2013023097 W US2013023097 W US 2013023097W WO 2013112803 A3 WO2013112803 A3 WO 2013112803A3
Authority
WO
WIPO (PCT)
Prior art keywords
energization elements
integrated component
stacked integrated
component devices
electrical
Prior art date
Application number
PCT/US2013/023097
Other languages
French (fr)
Other versions
WO2013112803A2 (en
Inventor
Randall B. Pugh
Frederick A. Flitsch
Daniel B. Otts
James Daniel Riall
Adam Toner
Original Assignee
Johnson & Johnson Vision Care, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BR112014018454A priority Critical patent/BR112014018454A8/en
Priority to EP13705292.4A priority patent/EP2807672A2/en
Priority to SG11201404171YA priority patent/SG11201404171YA/en
Priority to RU2014134724/28A priority patent/RU2596629C2/en
Priority to KR1020147023516A priority patent/KR20140116539A/en
Priority to AU2013212002A priority patent/AU2013212002B2/en
Application filed by Johnson & Johnson Vision Care, Inc. filed Critical Johnson & Johnson Vision Care, Inc.
Priority to CA2862640A priority patent/CA2862640A1/en
Priority to CN201380017230.2A priority patent/CN104205329B/en
Priority to JP2014554844A priority patent/JP6158227B2/en
Publication of WO2013112803A2 publication Critical patent/WO2013112803A2/en
Publication of WO2013112803A3 publication Critical patent/WO2013112803A3/en
Priority to HK15105054.5A priority patent/HK1204508A1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C11/00—Non-optical adjuncts; Attachment thereof
    • G02C11/10—Electronic devices other than hearing aids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • B29D11/00807—Producing lenses combined with electronics, e.g. chips
    • B29D11/00817—Producing electro-active lenses or lenses with energy receptors, e.g. batteries or antennas
    • B29D11/00826—Producing electro-active lenses or lenses with energy receptors, e.g. batteries or antennas with energy receptors for wireless energy transmission
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00038—Production of contact lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C7/00—Optical parts
    • G02C7/02—Lenses; Lens systems ; Methods of designing lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C7/00—Optical parts
    • G02C7/02—Lenses; Lens systems ; Methods of designing lenses
    • G02C7/04—Contact lenses for the eyes
    • G—PHYSICS
    • G02—OPTICS
    • G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C7/00—Optical parts
    • G02C7/02—Lenses; Lens systems ; Methods of designing lenses
    • G02C7/08—Auxiliary lenses; Arrangements for varying focal length
    • G02C7/081—Ophthalmic lenses with variable focal length
    • G02C7/083—Electrooptic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
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    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • G—PHYSICS
    • G02—OPTICS
    • G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C2202/00—Generic optical aspects applicable to one or more of the subgroups of G02C7/00
    • G02C2202/16—Laminated or compound lenses
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    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06506—Wire or wire-like electrical connections between devices
    • H—ELECTRICITY
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    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
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    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
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    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01047—Silver [Ag]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings, jackets or wrappings of a single cell or a single battery
    • H01M50/102—Primary casings, jackets or wrappings of a single cell or a single battery characterised by their shape or physical structure
    • H01M50/107—Primary casings, jackets or wrappings of a single cell or a single battery characterised by their shape or physical structure having curved cross-section, e.g. round or elliptic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Abstract

This invention provides a stacked integrated component device with multiple energization elements comprising: a first layer comprising a first surface, and a second layer comprising a second surface, wherein at least a portion of the first surface lays above at least a portion of the second surface; at least one electrical connection between an electrical contact on the first surface and an electrical contact on the second surface; at least one electrical transistor, wherein the electrical transistor(s) are comprised in the stacked integrated component device; at least a first and a second discrete energization elements, wherein the discrete energization elements are comprised in either or both of the first and second layers; and self-test circuitry comprising a sensing element configured to detect current flowing through the energization elements, the self-test circuitry being configured to determine if one of the energization elements is causing an excessive current draw condition.
PCT/US2013/023097 2012-01-26 2013-01-25 Multiple energization elements in stacked integrated component devices WO2013112803A2 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
EP13705292.4A EP2807672A2 (en) 2012-01-26 2013-01-25 Multiple energization elements in stacked integrated component devices
SG11201404171YA SG11201404171YA (en) 2012-01-26 2013-01-25 Multiple energization elements in stacked integrated component devices
RU2014134724/28A RU2596629C2 (en) 2012-01-26 2013-01-25 Multiple energization elements in stacked integrated component devices
KR1020147023516A KR20140116539A (en) 2012-01-26 2013-01-25 Multiple energization elements in stacked integrated component devices
AU2013212002A AU2013212002B2 (en) 2012-01-26 2013-01-25 Multiple energization elements in stacked integrated component devices
BR112014018454A BR112014018454A8 (en) 2012-01-26 2013-01-25 MULTIPLE POWER ELEMENTS IN STACKED INTEGRATED COMPONENT DEVICES
CA2862640A CA2862640A1 (en) 2012-01-26 2013-01-25 Multiple energization elements in stacked integrated component devices
CN201380017230.2A CN104205329B (en) 2012-01-26 2013-01-25 Multiple energization elements in the integrated component device of stacking
JP2014554844A JP6158227B2 (en) 2012-01-26 2013-01-25 Multiple energy application elements in a stacked monolithic component device
HK15105054.5A HK1204508A1 (en) 2012-01-26 2015-05-28 Multiple energization elements in stacked integrated component devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/358,916 2012-01-26
US13/358,916 US9110310B2 (en) 2011-03-18 2012-01-26 Multiple energization elements in stacked integrated component devices

Publications (2)

Publication Number Publication Date
WO2013112803A2 WO2013112803A2 (en) 2013-08-01
WO2013112803A3 true WO2013112803A3 (en) 2013-10-10

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PCT/US2013/023097 WO2013112803A2 (en) 2012-01-26 2013-01-25 Multiple energization elements in stacked integrated component devices

Country Status (13)

Country Link
US (2) US9110310B2 (en)
EP (1) EP2807672A2 (en)
JP (2) JP6158227B2 (en)
KR (1) KR20140116539A (en)
CN (1) CN104205329B (en)
AU (1) AU2013212002B2 (en)
BR (1) BR112014018454A8 (en)
CA (1) CA2862640A1 (en)
HK (1) HK1204508A1 (en)
RU (1) RU2596629C2 (en)
SG (1) SG11201404171YA (en)
TW (1) TWI593080B (en)
WO (1) WO2013112803A2 (en)

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Publication number Priority date Publication date Assignee Title
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