US20080196834A1 - Liquid phase etching method and liquid phase etching apparatus - Google Patents
Liquid phase etching method and liquid phase etching apparatus Download PDFInfo
- Publication number
- US20080196834A1 US20080196834A1 US12/109,623 US10962308A US2008196834A1 US 20080196834 A1 US20080196834 A1 US 20080196834A1 US 10962308 A US10962308 A US 10962308A US 2008196834 A1 US2008196834 A1 US 2008196834A1
- Authority
- US
- United States
- Prior art keywords
- liquid
- etching
- processing object
- liquid phase
- phase etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Definitions
- the present invention relates to a technical field of processing the surface of solid materials or other processing objects, in particular a field of forming fine pattern on them.
- the field includes, for example, a liquid phase etching method and a liquid phase etching apparatus for use in manufacture of semiconductor device or MEMS (micro-electro-mechanical system) device.
- MEMS micro-electro-mechanical system
- the semiconductor surface is irradiated with reactive gas in plasma state, and the semiconductor is processed into desired shape.
- a vacuum chamber 1 is coupled to a vacuum pump 2 for creating vacuum.
- a processing object like silicon wafer 3 is placed in the vacuum chamber 1 , and desired gas is introduced, and plasma 4 is generated to cause interaction with the surface of the processing object, and the processing object is processed.
- the processing object is etched.
- etching in the liquid is sufficiently fast in etching processing speed, but is not suited to fine patterning because etching tends to be isotropic.
- the reason of using plasma in etching is to make etching anisotropic in order to meet the demand for higher precision in fine patterning.
- the etching method of the invention is etching a processing object which may be either solid, solid assembly or gel material, by spraying a chemically reactive liquid at a specified speed.
- the etching method of the invention is spraying a chemically reactive liquid to a processing object placed in a vacuum chamber, by using a nozzle mechanism.
- the degree of vacuum in the vacuum chamber while processing the processing object may be a sufficient degree of vacuum for preventing generation of impulse wave when surpassing the sonic speed at the time of jet injection of liquid.
- the etching method of the invention is further characterized by impinging the liquid particles charged on the surface to the processing object, which is either solid, solid assembly or gel material, with induced acceleration and induced deceleration in electric field or magnetic field, by applying an electric charge to injected liquid particles.
- the processing object which is either solid, solid assembly or gel material
- the etching method of the invention is further characterized by processing the solid or solid assembly selectively by spraying chemically reactive liquid to the portion exposed from the mask, by covering part of the surface of solid or solid assembly with a resin material and using as mask.
- the etching apparatus of the invention is comprising a mechanism for holding a processing object and a nozzle structure for spraying chemically reactive liquid to the held processing object.
- the etching speed can be enhanced substantially.
- FIG. 1 is a schematic sectional view of liquid phase etching apparatus in an embodiment of the invention.
- FIGS. 2A to 2D are process charts showing other processing process in the embodiment of the invention.
- FIGS. 3A to 3C are process charts showing other processing process in the embodiment of the invention.
- FIG. 4 is a schematic sectional view of liquid phase etching apparatus in the embodiment of the invention.
- FIG. 5 is a schematic sectional view of another liquid phase etching apparatus in the embodiment of the invention.
- FIG. 6 is a schematic sectional view of another liquid phase etching apparatus in the embodiment of the invention.
- FIG. 7 is a schematic sectional view of a different liquid phase etching apparatus in the embodiment of the invention.
- FIG. 8 is a schematic sectional view of a further liquid phase etching apparatus in the embodiment of the invention.
- FIG. 9 is a schematic sectional view of plasma etching apparatus in a prior art.
- the invention is intended to realize both characteristics of (1) high speed etching by using liquid and (2) anisotropic etching by using plasma, simultaneously by spraying liquid to the processing object at an extremely high speed, and hence presents a processing technology capable of processing at high speed and having an extremely sharp anisotropy.
- the system capable of impinging liquid drops at super high speed also has an effect of generating plasma on the top surface of the processing object when the liquid drops impinge, so that the features of the invention may be exhibited more outstandingly.
- the invention enables to transfer the existing “etching process” using plasma to processing in liquid, which is high in processing capability, and hence the productivity is improved from several times to one digit higher.
- the semiconductor industry requires a tremendous investment for manufacturing equipment. It is extremely difficult to realize the chip unit price worthy of investment, and it is very difficult to adapt to so-called silicon cycle. Therefore, if the etching process time can be improved by one digit, the productivity is enhanced and it is expected to change the industrial structure dramatically.
- FIG. 1 is an explanatory diagram of liquid phase etching apparatus used in the preferred embodiment. Referring now to FIG. 1 , the outline of the etching apparatus of embodiment 1 is explained.
- a vacuum chamber 10 is coupled to a vacuum pump 20 for creating vacuum.
- a stage 40 and plural nozzles 50 are placed in the vacuum chamber 10 .
- the stage 40 holds a processing object 30 which is either solid, solid assembly or gel material.
- the nozzles 50 are connected to a liquid feed device 60 for feeding specified liquid, and particles of chemically reactive liquid 70 can be sprayed to the processing object 30 . From a variety of liquid 70 capable of etching the processing object 30 , a solvent suited to the processing object is selected and used.
- the liquid 70 is sprayed from the nozzles 50 at a speed of over 1000 km/hour.
- the sprayed liquid 70 wets the processing object surface 31 , which is etched simultaneously.
- a surface active agent is sprayed to the processing object surface from a spray outlet 81 of a surface active agent feed device 80 .
- the surface active agent may be sprayed before spraying of liquid 70 , simultaneously with spraying, or right after spraying of liquid 70 .
- the liquid 70 permeates into all parts of the processing object surface 31 , and it is etched uniformly.
- part of liquid components may be transformed into plasma by gaining a high energy.
- the generated plasma is effective to activate the processing object surface 31 , and further accelerate the etching process speed.
- Nozzles are not always made of materials excellent in corrosion resistance. If nozzles are made of materials not so high in corrosion resistance, the nozzle basic shape is formed by using a material suited to nozzle processing, and the surface directly contacting with the etching liquid must be coated with an anticorrosive substance. This coating process is either irradiation of nozzle surface directly with plasma mainly composed of desired anticorrosive substance, or irradiation of nozzle surface with plasma for generating an anticorrosive substance by reacting with the material forming the basic shape. Coating the nozzle surface with an anticorrosive substance enables the corrosion resistance of the nozzle to the etching liquid to improve remarkably.
- FIGS. 2A to 2D are process charts of embodiment 2 showing the process in the case of using the photo resist as mask and semiconductor as processing object.
- FIGS. 3A to 3D are process charts of embodiment 2 showing the process in the case of using the coating substance as mask and semiconductor as processing object.
- FIG. 4 is an explanatory diagram of etching apparatus of embodiment 2 in the case of using semiconductor as processing object.
- the semiconductor is processed more finely than 0.25 ⁇ m. Accordingly, the size of fine particles of liquid 70 for processing it should be smaller than 0.2 ⁇ m. The size of fine particles may be small enough for the factor determining the size of the object of processing (critical dimension). If the required processing precision is large, the size of a corresponding particle may be selected from sizes smaller than the required processing precision.
- the etching apparatus includes nozzles 50 for forming fine particles smaller than 0.2 ⁇ m, or supersonic nozzles 51 for forming liquid fine particles at higher speed. In the invention, the supersonic nozzles spray liquid fine particles at a speed of no less than 1000 km/hour, or more preferably spray liquid fine particles by accelerating to a speed of no less than 3,000 km/hour.
- the semiconductor substrate to be processed is explained.
- a silicon wafer 90 forming a thin film 100 of a substance necessary for forming a semiconductor element thereon is used.
- the semiconductor substrate to be processed is silicon substrate, or silicon substrate forming silicon oxide film, silicon nitride film, oxide film of rare earth elements, or metal film of aluminum or copper, thereon.
- a solvent suitable for the material of the semiconductor substrate to be processed is selected and used.
- the degree of vacuum of vacuum chamber 10 is kept higher than about 1E-3 Torr, and the liquid 70 is sprayed from the nozzles 50 at a speed of no less than about 1000 km/hour.
- the sprayed liquid reaches and wets the processing object surface 31 , it is etched at the same time.
- a surface active agent is used for the liquid permeating into all parts of the processing object surface 31 , and for obtaining a homogeneous etching effect. If wetting of liquid 70 on the processing object surface 31 is poor, by spraying the surface active agent to the processing object surface, the liquid 70 is distributed in all parts of the processing object surface 31 , so that uniform etching is attained.
- part of liquid components may be transformed into plasma by receiving high energy.
- the generated plasma activates the processing object surface, and may further accelerate the etching speed.
- a photo resist 110 is formed on the thin film 100 , using it as mask, it may be processed in desired pattern and size by using the so-called lithography.
- An appropriate plasma 120 may be determined in consideration of: plasma of rare gases; interaction with substance for composing the photo resist 110 ; interaction with etching liquid 70 such as solvents, acid or alkali to be used.
- etching liquid 70 such as solvents, acid or alkali to be used
- sufficient corrosion resistance may not be achieved in the photo resist 110 mainly composed of organic materials.
- a coating substance 130 made of material having enough corrosion resistance is applied on the surface of the processing object 100 , and liquid phase etching is executed by using the coating substance 130 as mask.
- the processing object corresponds to the thin film 100 formed on the surface of silicon substrate 90 .
- the coating substance 130 is etched by using etching liquid 70 , such as solvent, acid or alkali, capable of etching the coating substance 130 .
- etching liquid 70 such as solvent, acid or alkali, capable of etching the coating substance 130 .
- the processing object 100 is etched in liquid phase and processed as desired by spraying the solvent and acidic or alkaline etching liquid 70 for etching the processing object 100 from the supersonic nozzles 51 .
- the vacuum degree in the vacuum chamber 10 is kept at degree of vacuum higher than 1E-3 Torr (that is, lower pressure), and the liquid 70 is sprayed from nozzles 51 at a speed of higher than 1,000 km/hour. The degree of vacuum is thus maintained in order to prevent generation of impulse waves or the like by surpassing the sonic speed at the time of jet injection of the chemically reactive liquid.
- the semiconductor substrate or other thin film to be processed can be processed very finely according to the mask pattern.
- Embodiment 3 by referring to FIG. 5 and FIG. 6 , explains an etching method of digging groove in the vertical direction by making use of electric field or magnetic field at the time of etching process.
- FIG. 5 is an explanatory diagram of etching apparatus for accelerating the liquid 70 by applying an electric field to the processing object in embodiment 3 of the invention
- FIG. 6 is an explanatory diagram of etching apparatus for accelerating the liquid 70 in rotating direction by applying a magnetic field to the vacuum chamber in embodiment 3 of the invention.
- a charging mechanism 140 is provided at the outlet or near the outlet of the nozzles 50 , and an electric charge is applied to the ejecting pulverized liquid (that is, liquid particles) 70 .
- the ejecting pulverized liquid 70 is provided with freedom in directivity.
- a voltage application mechanism 150 is provided for applying a voltage to the stage holding the semiconductor solid.
- the liquid 70 sprayed out from the nozzles 50 is first provided with an electric charge by the charging mechanism 140 , and is accelerated by the voltage application mechanism 150 and reaches the processing object 30 .
- the applicable voltage is limited by electric discharge or leak varying with the structure of the apparatus or electrical characteristic of the liquid to be used. This problem will be further discussed in embodiment 5. By applying the voltage intermittently by combining with a system of promoting vaporization of the liquid used in the etching, effects of current leak or the like may be prevented.
- the liquid 71 can be accelerated in the rotating direction, and the motion trajectory can be varied, and the direction can be controlled freely.
- Reference numeral 71 refers to the liquid rotated in its trajectory.
- FIG. 7 shows an etching apparatus in embodiment 4 of the invention, in which nozzles are provided at every individual semiconductor chip.
- FIG. 8 shows an etching apparatus having numerous fine nozzles by making use of MEMS in embodiment 4 of the invention.
- plural chips 170 are formed at intervals of about 1 cm.
- nozzles 50 are installed immediately above the individual chips 170 , and the angle variation of liquid 70 may be minimized. Besides, by installing the plural nozzles in every chip, effects of angle changes may be minimized.
- nozzles may be disposed at intervals of several microns.
- etching may be carried out using nozzles densely installed in an area corresponding to the entire surface of the processing object.
- nozzles densely installed in an area corresponding to the entire surface of the processing object.
- FIG. 8 each nozzle is shown in magnified view for the sake of explanation.
- the liquid feed device 60 includes an intermittent spray circuit or intermittent spray device (not shown), and the liquid is sprayed from the nozzles intermittently, and it is preferred to set a necessary time interval for allowing the etching liquid to be evaporated after being sprayed out.
- the speed may be enough as far as part or most of liquid components can be transformed into plasma.
- the invention presents a liquid phase etching method capable of spraying an etching liquid to the processing object at a high speed, and is intended to enhance the etching speed substantially while maintaining anisotropy or other fine patterning performance of dry etching.
Abstract
A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.
Description
- This application is a divisional of U.S. patent application Ser. No. 10/546,015, filed Aug. 18, 2005, which is a National Phase of PCT/JP2004/002073, filed on Feb. 23, 2004, all of which are incorporated herein by reference.
- The present invention relates to a technical field of processing the surface of solid materials or other processing objects, in particular a field of forming fine pattern on them. The field includes, for example, a liquid phase etching method and a liquid phase etching apparatus for use in manufacture of semiconductor device or MEMS (micro-electro-mechanical system) device.
- In processing (etching) process of semiconductor as a typical example of fine patterning, the semiconductor surface is irradiated with reactive gas in plasma state, and the semiconductor is processed into desired shape.
- Explaining briefly by referring to
FIG. 9 , avacuum chamber 1 is coupled to avacuum pump 2 for creating vacuum. A processing object likesilicon wafer 3 is placed in thevacuum chamber 1, and desired gas is introduced, andplasma 4 is generated to cause interaction with the surface of the processing object, and the processing object is processed. InFIG. 9 , the processing object is etched. - Meanwhile, as disclosed in Japanese Patent Unexamined Publication No. H9-27654, the conventional etching was often processed by immersing the solid processing object in liquid. However, etching in the liquid is sufficiently fast in etching processing speed, but is not suited to fine patterning because etching tends to be isotropic.
- The reason of using plasma in etching is to make etching anisotropic in order to meet the demand for higher precision in fine patterning.
- However, when plasma is used in etching, the processing speed is sacrificed. As a result, in the semiconductor industrial field, typically, it took about 10 minutes to process one wafer.
- The etching method of the invention is etching a processing object which may be either solid, solid assembly or gel material, by spraying a chemically reactive liquid at a specified speed.
- Also, the etching method of the invention is spraying a chemically reactive liquid to a processing object placed in a vacuum chamber, by using a nozzle mechanism. The degree of vacuum in the vacuum chamber while processing the processing object may be a sufficient degree of vacuum for preventing generation of impulse wave when surpassing the sonic speed at the time of jet injection of liquid.
- Also, the etching method of the invention is further characterized by impinging the liquid particles charged on the surface to the processing object, which is either solid, solid assembly or gel material, with induced acceleration and induced deceleration in electric field or magnetic field, by applying an electric charge to injected liquid particles.
- Also, the etching method of the invention is further characterized by processing the solid or solid assembly selectively by spraying chemically reactive liquid to the portion exposed from the mask, by covering part of the surface of solid or solid assembly with a resin material and using as mask.
- Also, the etching apparatus of the invention is comprising a mechanism for holding a processing object and a nozzle structure for spraying chemically reactive liquid to the held processing object.
- By using the liquid phase etching method and liquid phase etching apparatus of the invention, the etching speed can be enhanced substantially.
-
FIG. 1 is a schematic sectional view of liquid phase etching apparatus in an embodiment of the invention. -
FIGS. 2A to 2D are process charts showing other processing process in the embodiment of the invention. -
FIGS. 3A to 3C are process charts showing other processing process in the embodiment of the invention. -
FIG. 4 is a schematic sectional view of liquid phase etching apparatus in the embodiment of the invention. -
FIG. 5 is a schematic sectional view of another liquid phase etching apparatus in the embodiment of the invention. -
FIG. 6 is a schematic sectional view of another liquid phase etching apparatus in the embodiment of the invention. -
FIG. 7 is a schematic sectional view of a different liquid phase etching apparatus in the embodiment of the invention. -
FIG. 8 is a schematic sectional view of a further liquid phase etching apparatus in the embodiment of the invention. -
FIG. 9 is a schematic sectional view of plasma etching apparatus in a prior art. - The invention is intended to realize both characteristics of (1) high speed etching by using liquid and (2) anisotropic etching by using plasma, simultaneously by spraying liquid to the processing object at an extremely high speed, and hence presents a processing technology capable of processing at high speed and having an extremely sharp anisotropy.
- The system capable of impinging liquid drops at super high speed also has an effect of generating plasma on the top surface of the processing object when the liquid drops impinge, so that the features of the invention may be exhibited more outstandingly.
- The invention enables to transfer the existing “etching process” using plasma to processing in liquid, which is high in processing capability, and hence the productivity is improved from several times to one digit higher. The semiconductor industry requires a tremendous investment for manufacturing equipment. It is extremely difficult to realize the chip unit price worthy of investment, and it is very difficult to adapt to so-called silicon cycle. Therefore, if the etching process time can be improved by one digit, the productivity is enhanced and it is expected to change the industrial structure dramatically.
- A preferred embodiment of the invention is described below while referring to the accompanying drawings. In the drawings, the components having same basic function are identified with same reference numerals.
- A preferred embodiment of the invention is explained by referring to
embodiment 1.FIG. 1 is an explanatory diagram of liquid phase etching apparatus used in the preferred embodiment. Referring now toFIG. 1 , the outline of the etching apparatus ofembodiment 1 is explained. Avacuum chamber 10 is coupled to avacuum pump 20 for creating vacuum. Astage 40 andplural nozzles 50 are placed in thevacuum chamber 10. Thestage 40 holds aprocessing object 30 which is either solid, solid assembly or gel material. Thenozzles 50 are connected to aliquid feed device 60 for feeding specified liquid, and particles of chemicallyreactive liquid 70 can be sprayed to theprocessing object 30. From a variety ofliquid 70 capable of etching theprocessing object 30, a solvent suited to the processing object is selected and used. - Keeping the vacuum chamber at a higher degree of vacuum than about 1E-3 Torr (that is, at lower pressure), the
liquid 70 is sprayed from thenozzles 50 at a speed of over 1000 km/hour. The sprayed liquid 70 wets theprocessing object surface 31, which is etched simultaneously. - If wettability of
liquid 70 on theprocessing object surface 31 is poor, a surface active agent is sprayed to the processing object surface from aspray outlet 81 of a surface activeagent feed device 80. The surface active agent may be sprayed before spraying ofliquid 70, simultaneously with spraying, or right after spraying ofliquid 70. By the presence of surface active agent, theliquid 70 permeates into all parts of theprocessing object surface 31, and it is etched uniformly. - For example, when the
liquid 70 is sprayed to theprocessing object 30 by accelerating to a speed of more than 10,000 km/hour, part of liquid components may be transformed into plasma by gaining a high energy. The generated plasma is effective to activate theprocessing object surface 31, and further accelerate the etching process speed. - Anticorrosive processing of
nozzles 50 is explained. - Nozzles are not always made of materials excellent in corrosion resistance. If nozzles are made of materials not so high in corrosion resistance, the nozzle basic shape is formed by using a material suited to nozzle processing, and the surface directly contacting with the etching liquid must be coated with an anticorrosive substance. This coating process is either irradiation of nozzle surface directly with plasma mainly composed of desired anticorrosive substance, or irradiation of nozzle surface with plasma for generating an anticorrosive substance by reacting with the material forming the basic shape. Coating the nozzle surface with an anticorrosive substance enables the corrosion resistance of the nozzle to the etching liquid to improve remarkably.
- Other processing process of the preferred embodiment of the invention is explained by referring to
embodiment 2.FIGS. 2A to 2D ,FIGS. 3A to 3C andFIG. 4 explainembodiment 2.FIGS. 2A to 2D are process charts ofembodiment 2 showing the process in the case of using the photo resist as mask and semiconductor as processing object.FIGS. 3A to 3D are process charts ofembodiment 2 showing the process in the case of using the coating substance as mask and semiconductor as processing object. AndFIG. 4 is an explanatory diagram of etching apparatus ofembodiment 2 in the case of using semiconductor as processing object. - As an example of fine patterning of
processing object 30, the latest processing of fine patterning of semiconductor device is explained. - In 2002, generally, the semiconductor is processed more finely than 0.25 μm. Accordingly, the size of fine particles of
liquid 70 for processing it should be smaller than 0.2 μm. The size of fine particles may be small enough for the factor determining the size of the object of processing (critical dimension). If the required processing precision is large, the size of a corresponding particle may be selected from sizes smaller than the required processing precision. Inembodiment 2, the etching apparatus includesnozzles 50 for forming fine particles smaller than 0.2 μm, orsupersonic nozzles 51 for forming liquid fine particles at higher speed. In the invention, the supersonic nozzles spray liquid fine particles at a speed of no less than 1000 km/hour, or more preferably spray liquid fine particles by accelerating to a speed of no less than 3,000 km/hour. - Referring to
FIG. 2 , the semiconductor substrate to be processed is explained. As an example of semiconductor substrate, asilicon wafer 90 forming athin film 100 of a substance necessary for forming a semiconductor element thereon is used. The semiconductor substrate to be processed is silicon substrate, or silicon substrate forming silicon oxide film, silicon nitride film, oxide film of rare earth elements, or metal film of aluminum or copper, thereon. - Although there are various liquid for etching the
thin film 100 of processing object material, a solvent suitable for the material of the semiconductor substrate to be processed is selected and used. - The degree of vacuum of
vacuum chamber 10 is kept higher than about 1E-3 Torr, and the liquid 70 is sprayed from thenozzles 50 at a speed of no less than about 1000 km/hour. When the sprayed liquid reaches and wets theprocessing object surface 31, it is etched at the same time. Depending on a relation betweenprocessing object surface 31 andliquid 70, a surface active agent is used for the liquid permeating into all parts of theprocessing object surface 31, and for obtaining a homogeneous etching effect. If wetting ofliquid 70 on theprocessing object surface 31 is poor, by spraying the surface active agent to the processing object surface, the liquid 70 is distributed in all parts of theprocessing object surface 31, so that uniform etching is attained. - For example, if the liquid 70 reaches the processing object at a high speed exceeding about 10,000 km/hour, part of liquid components may be transformed into plasma by receiving high energy. The generated plasma activates the processing object surface, and may further accelerate the etching speed.
- When manufacturing a semiconductor device, it may be required to process in a very fine size of 0.1 μm smaller than 0.25 μm. In such a case, as shown in
FIG. 2B , a photo resist 110 is formed on thethin film 100, using it as mask, it may be processed in desired pattern and size by using the so-called lithography. At this time, in order to provide the photo resist with corrosion resistance to withstand liquid phase etching, it is preferred to process the surface of photo resist 110 preliminarily byplasma 120 as shown inFIG. 2B . - By plasma processing of the surface of the photo resist composed of organic materials, polymerization reaction of organic materials takes place on the surface. By this reaction, cross linking of organic materials on the surface is promoted, so that an anticorrosive photo resist 111 obtained as shown in
FIG. 2C . Anappropriate plasma 120 may be determined in consideration of: plasma of rare gases; interaction with substance for composing the photo resist 110; interaction withetching liquid 70 such as solvents, acid or alkali to be used. - Depending on the combination of etching
liquid 70 such as solvents, acid or alkali to be used, sufficient corrosion resistance may not be achieved in the photo resist 110 mainly composed of organic materials. - In such a case, as shown in
FIG. 3 , acoating substance 130 made of material having enough corrosion resistance is applied on the surface of theprocessing object 100, and liquid phase etching is executed by using thecoating substance 130 as mask. Inembodiment 2, the processing object corresponds to thethin film 100 formed on the surface ofsilicon substrate 90. - At first, using the photo resist 110 as mask, the
coating substance 130 is etched by usingetching liquid 70, such as solvent, acid or alkali, capable of etching thecoating substance 130. - Further, using the patterned
coating substance 131 as mask, as shown inFIG. 4 , in thevacuum chamber 10, theprocessing object 100 is etched in liquid phase and processed as desired by spraying the solvent and acidic oralkaline etching liquid 70 for etching theprocessing object 100 from thesupersonic nozzles 51. The vacuum degree in thevacuum chamber 10 is kept at degree of vacuum higher than 1E-3 Torr (that is, lower pressure), and the liquid 70 is sprayed fromnozzles 51 at a speed of higher than 1,000 km/hour. The degree of vacuum is thus maintained in order to prevent generation of impulse waves or the like by surpassing the sonic speed at the time of jet injection of the chemically reactive liquid. - By the method explained above, the semiconductor substrate or other thin film to be processed can be processed very finely according to the mask pattern.
- Other processing process of the preferred embodiment of the invention is explained below by referring to
embodiment 3. In manufacture of semiconductor device in which precision processing is required, overhang of etching groove or forming of taper may cause to worsen the processing precision. Hence, there is a strong demand for an etching method of digging groove in the vertical direction from the surface of flat solid body. -
Embodiment 3, by referring toFIG. 5 andFIG. 6 , explains an etching method of digging groove in the vertical direction by making use of electric field or magnetic field at the time of etching process. -
FIG. 5 is an explanatory diagram of etching apparatus for accelerating the liquid 70 by applying an electric field to the processing object inembodiment 3 of the invention, andFIG. 6 is an explanatory diagram of etching apparatus for accelerating the liquid 70 in rotating direction by applying a magnetic field to the vacuum chamber inembodiment 3 of the invention. - As shown in
FIG. 5 , acharging mechanism 140 is provided at the outlet or near the outlet of thenozzles 50, and an electric charge is applied to the ejecting pulverized liquid (that is, liquid particles) 70. By making use of this electric charge, the ejecting pulverizedliquid 70 is provided with freedom in directivity. For this purpose, avoltage application mechanism 150 is provided for applying a voltage to the stage holding the semiconductor solid. - The liquid 70 sprayed out from the
nozzles 50 is first provided with an electric charge by thecharging mechanism 140, and is accelerated by thevoltage application mechanism 150 and reaches theprocessing object 30. The applicable voltage is limited by electric discharge or leak varying with the structure of the apparatus or electrical characteristic of the liquid to be used. This problem will be further discussed in embodiment 5. By applying the voltage intermittently by combining with a system of promoting vaporization of the liquid used in the etching, effects of current leak or the like may be prevented. - Further, as shown in
FIG. 6 , by using a magneticfield application mechanism 160 for applying a magnetic field, the liquid 71 can be accelerated in the rotating direction, and the motion trajectory can be varied, and the direction can be controlled freely.Reference numeral 71 refers to the liquid rotated in its trajectory. - Another processing process of the preferred embodiment of the invention is explained below by referring to
embodiment 4. Only onenozzle 50 for injecting liquid may be used in etching process, but when the processing object such as a solid has a certain area, if only one nozzle is used then, the incident angle to the surface of the pulverized liquid particles varies depending on the location of the processing. This is the same phenomenon as a flat surface illuminated by a spot light source varies in luminance depending on the location. Therefore, to process uniformly on the entire surface of the processing object, it is effective to use plural nozzles. Inembodiment 4, a case of using the plural nozzles is explained. -
FIG. 7 shows an etching apparatus inembodiment 4 of the invention, in which nozzles are provided at every individual semiconductor chip.FIG. 8 shows an etching apparatus having numerous fine nozzles by making use of MEMS inembodiment 4 of the invention. - For example, in the manufacturing process of silicon semiconductor,
plural chips 170 are formed at intervals of about 1 cm. As shown inFIG. 7 ,nozzles 50 are installed immediately above theindividual chips 170, and the angle variation ofliquid 70 may be minimized. Besides, by installing the plural nozzles in every chip, effects of angle changes may be minimized. - Further, as shown in
FIG. 8 , for example, by usingmicro nozzles 52 making use of MEMS or micro machining, nozzles may be disposed at intervals of several microns. At this time, etching may be carried out using nozzles densely installed in an area corresponding to the entire surface of the processing object. Or by installing nozzles in a specific area, and by moving the nozzles or the processing object, the entire surface of the processing object may be etched. InFIG. 8 , each nozzle is shown in magnified view for the sake of explanation. - A further processing process of the preferred embodiment of the invention is explained below by referring to embodiment 5. Depending on the characteristic of the etching liquid, such as solvent, acid or alkali, used in liquid phase etching, the time of vaporization of the liquid used in the etching in the
vacuum chamber 10 varies. - When the vaporization speed is sufficiently fast, the sprayed liquid is soon vaporized after a specified etching time and there is no problem. If the vaporization speed is slow, the liquid remains after necessary etching time, which may lead to etching defects. Accordingly, when the vaporization speed is slow, it is required to prevent excessive supply of liquid by controlling the spraying amount of the etching liquid. To solve this problem, the
liquid feed device 60 includes an intermittent spray circuit or intermittent spray device (not shown), and the liquid is sprayed from the nozzles intermittently, and it is preferred to set a necessary time interval for allowing the etching liquid to be evaporated after being sprayed out. - In the foregoing preferred embodiment, it is desired to spray the chemically reactive liquid at super high speed, but if not so high, the speed may be enough as far as part or most of liquid components can be transformed into plasma.
- As explained herein, the invention presents a liquid phase etching method capable of spraying an etching liquid to the processing object at a high speed, and is intended to enhance the etching speed substantially while maintaining anisotropy or other fine patterning performance of dry etching.
Claims (6)
1. A liquid phase etching apparatus comprising:
a vacuum chamber; and
a nozzle mechanism provided in the vacuum chamber for spraying a chemical reactive liquid to a processing object in vacuum atmosphere,
wherein at least the nozzle mechanism is protected by anticorrosive treatment, the anticorrosive treatment is a process of forming a thin film of substance having corrosion resistance to the liquid in the exposed part of the nozzle mechanism, and the treatment is a surface treatment by using plasma.
2. The liquid phase etching apparatus of claim 1 , further comprising:
a stage for holding the processing object,
a charging mechanism provided at the exit of the nozzle mechanism, and
a voltage application mechanism for applying a voltage to the stage,
wherein the charging mechanism applies an electric charge to particles of the sprayed liquid, and
the voltage application mechanism can accelerate the charged particles of the liquid.
3. The liquid phase etching apparatus of claim 1 , further comprising a magnetic field application mechanism, wherein the magnetic field application mechanism controls the trajectory of liquid particles.
4. The liquid phase etching apparatus of claim 1 , further comprising a liquid feed device, wherein the liquid feed device feeds the liquid continuously or intermittently to the nozzle mechanism.
5. The liquid phase etching apparatus of claim 1 , further comprising a surface active agent feed mechanism, wherein the surface active agent feed mechanism includes:
a spraying section for spraying the surface active agent to the processing object, and
a feed device for feeding the surface active agent to the spraying section.
6. The liquid phase etching apparatus of claim 1 , wherein the vacuum atmosphere has higher degree of vacuum than 1E-3 Torr.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/109,623 US20080196834A1 (en) | 2003-02-21 | 2008-04-25 | Liquid phase etching method and liquid phase etching apparatus |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003044550 | 2003-02-21 | ||
JP2003-044550 | 2003-02-21 | ||
PCT/JP2004/002073 WO2004075278A1 (en) | 2003-02-21 | 2004-02-23 | Method and apparatus for liquid etching |
US10/546,015 US7378031B2 (en) | 2003-02-21 | 2004-02-23 | Liquid phase etching method and liquid phase etching apparatus |
US12/109,623 US20080196834A1 (en) | 2003-02-21 | 2008-04-25 | Liquid phase etching method and liquid phase etching apparatus |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/002073 Division WO2004075278A1 (en) | 2003-02-21 | 2004-02-23 | Method and apparatus for liquid etching |
US10/546,015 Division US7378031B2 (en) | 2003-02-21 | 2004-02-23 | Liquid phase etching method and liquid phase etching apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080196834A1 true US20080196834A1 (en) | 2008-08-21 |
Family
ID=32905455
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/546,015 Expired - Fee Related US7378031B2 (en) | 2003-02-21 | 2004-02-23 | Liquid phase etching method and liquid phase etching apparatus |
US12/109,623 Abandoned US20080196834A1 (en) | 2003-02-21 | 2008-04-25 | Liquid phase etching method and liquid phase etching apparatus |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/546,015 Expired - Fee Related US7378031B2 (en) | 2003-02-21 | 2004-02-23 | Liquid phase etching method and liquid phase etching apparatus |
Country Status (5)
Country | Link |
---|---|
US (2) | US7378031B2 (en) |
JP (2) | JP4680058B2 (en) |
CN (1) | CN100370588C (en) |
TW (1) | TW200425327A (en) |
WO (1) | WO2004075278A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8860424B1 (en) * | 2011-03-10 | 2014-10-14 | Solar Junction Corporation | Apparatus and method for highly accelerated life testing of solar cells |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8177993B2 (en) * | 2006-11-05 | 2012-05-15 | Globalfoundries Singapore Pte Ltd | Apparatus and methods for cleaning and drying of wafers |
JP5592083B2 (en) * | 2009-06-12 | 2014-09-17 | アイメック | Substrate processing method and semiconductor device manufacturing method using the same |
CN104064638B (en) * | 2014-06-26 | 2017-12-15 | 圆融光电科技有限公司 | The method of roughening and vacuum equipment of LED transparency conducting layers |
CN105063922B (en) * | 2015-07-15 | 2017-03-29 | 苏州市丹纺纺织研发有限公司 | A kind of turbulent flow type ironing device |
JP2017059654A (en) * | 2015-09-16 | 2017-03-23 | 富士通株式会社 | Circuit board, manufacturing method of circuit board and manufacturing method of electronic device package |
JP2020155614A (en) * | 2019-03-20 | 2020-09-24 | 株式会社Screenホールディングス | Substrate processing apparatus, substrate processing method, and semiconductor manufacturing method |
JP6623349B1 (en) * | 2019-03-29 | 2019-12-25 | 国立研究開発法人産業技術総合研究所 | Manufacturing method of electronic components |
KR102619877B1 (en) | 2019-09-11 | 2024-01-03 | 삼성전자주식회사 | Substrate treatment apparatus |
CN111031691B (en) * | 2019-12-24 | 2022-11-22 | 前海益科电子(深圳)有限公司 | Device for etching circuit board by using vacuum phenomenon |
CN111704364B (en) * | 2020-06-30 | 2022-11-25 | 福建省卓成环保科技有限公司 | Corrosion device and corrosion method for producing local ground glass by chemical method |
CN115724591A (en) * | 2021-08-31 | 2023-03-03 | 广东艾檬电子科技有限公司 | Micropore machining method based on electric field control |
CN114574862B (en) * | 2022-03-03 | 2022-09-02 | 东莞赛诺高德蚀刻科技有限公司 | Wind-assisted etching device and method for non-equal-depth structure |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3578943A (en) * | 1969-03-19 | 1971-05-18 | Soudure Electr Autogene | Protective coating for plasma apparatus |
US4973379A (en) * | 1988-12-21 | 1990-11-27 | Board Of Regents, The University Of Texas System | Method of aerosol jet etching |
US5041229A (en) * | 1988-12-21 | 1991-08-20 | Board Of Regents, The University Of Texas System | Aerosol jet etching |
US5770273A (en) * | 1995-02-14 | 1998-06-23 | General Electric Company | Plasma coating process for improved bonding of coatings on substrates |
US6427621B1 (en) * | 1999-04-14 | 2002-08-06 | Hitachi, Ltd. | Plasma processing device and plasma processing method |
US6676757B2 (en) * | 1999-12-17 | 2004-01-13 | Tokyo Electron Limited | Coating film forming apparatus and coating unit |
US7393385B1 (en) * | 2007-02-28 | 2008-07-01 | Corning Incorporated | Apparatus and method for electrostatically depositing aerosol particles |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57143477A (en) * | 1981-02-27 | 1982-09-04 | Sony Corp | Treating device |
JP2681988B2 (en) * | 1988-04-11 | 1997-11-26 | 富士通株式会社 | Etching method |
JP2926946B2 (en) * | 1990-09-20 | 1999-07-28 | 日立電線株式会社 | Spray nozzle for etching |
JPH05251421A (en) * | 1992-03-09 | 1993-09-28 | Nec Kyushu Ltd | Etching method |
JPH0729871A (en) * | 1993-06-25 | 1995-01-31 | Toshiba Corp | Method and apparatus for surface treatment |
JP3558372B2 (en) * | 1994-06-30 | 2004-08-25 | 株式会社荏原製作所 | Liquid atomizer for exhaust gas |
KR0148610B1 (en) * | 1994-07-28 | 1998-12-01 | 김주용 | Patterning method for semiconductor device |
KR0141057B1 (en) | 1994-11-19 | 1998-07-15 | 이헌조 | A method of manufacturing semiconductor laser |
JP3378774B2 (en) * | 1997-07-01 | 2003-02-17 | 三洋電機株式会社 | Film patterning method, method of manufacturing semiconductor device, thin film solar cell and method of manufacturing the same |
JP2001015477A (en) | 1999-06-28 | 2001-01-19 | Toshiba Corp | Substrate-treating method and apparatus thereof |
JP2002016031A (en) * | 2000-06-28 | 2002-01-18 | Sumitomo Precision Prod Co Ltd | Substrate treatment method |
JP2003037096A (en) * | 2001-07-26 | 2003-02-07 | Mitsubishi Electric Corp | Method for blasting semiconductor manufacturing apparatus |
-
2004
- 2004-02-18 TW TW093103973A patent/TW200425327A/en not_active IP Right Cessation
- 2004-02-23 CN CNB2004800041468A patent/CN100370588C/en not_active Expired - Fee Related
- 2004-02-23 WO PCT/JP2004/002073 patent/WO2004075278A1/en active Search and Examination
- 2004-02-23 US US10/546,015 patent/US7378031B2/en not_active Expired - Fee Related
- 2004-02-23 JP JP2005502805A patent/JP4680058B2/en not_active Expired - Fee Related
-
2008
- 2008-04-25 US US12/109,623 patent/US20080196834A1/en not_active Abandoned
- 2008-07-14 JP JP2008183012A patent/JP4845936B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3578943A (en) * | 1969-03-19 | 1971-05-18 | Soudure Electr Autogene | Protective coating for plasma apparatus |
US4973379A (en) * | 1988-12-21 | 1990-11-27 | Board Of Regents, The University Of Texas System | Method of aerosol jet etching |
US5041229A (en) * | 1988-12-21 | 1991-08-20 | Board Of Regents, The University Of Texas System | Aerosol jet etching |
US5770273A (en) * | 1995-02-14 | 1998-06-23 | General Electric Company | Plasma coating process for improved bonding of coatings on substrates |
US6427621B1 (en) * | 1999-04-14 | 2002-08-06 | Hitachi, Ltd. | Plasma processing device and plasma processing method |
US6676757B2 (en) * | 1999-12-17 | 2004-01-13 | Tokyo Electron Limited | Coating film forming apparatus and coating unit |
US7393385B1 (en) * | 2007-02-28 | 2008-07-01 | Corning Incorporated | Apparatus and method for electrostatically depositing aerosol particles |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8860424B1 (en) * | 2011-03-10 | 2014-10-14 | Solar Junction Corporation | Apparatus and method for highly accelerated life testing of solar cells |
Also Published As
Publication number | Publication date |
---|---|
WO2004075278A1 (en) | 2004-09-02 |
TWI315085B (en) | 2009-09-21 |
TW200425327A (en) | 2004-11-16 |
JP4845936B2 (en) | 2011-12-28 |
WO2004075278A9 (en) | 2005-05-26 |
JPWO2004075278A1 (en) | 2006-06-01 |
US7378031B2 (en) | 2008-05-27 |
JP2008294461A (en) | 2008-12-04 |
CN100370588C (en) | 2008-02-20 |
CN1751383A (en) | 2006-03-22 |
US20060049140A1 (en) | 2006-03-09 |
JP4680058B2 (en) | 2011-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20080196834A1 (en) | Liquid phase etching method and liquid phase etching apparatus | |
US5645897A (en) | Process and device for surface-modification by physico-chemical reactions of gases or vapors on surfaces, using highly-charged ions | |
US5403617A (en) | Hybrid pulsed valve for thin film coating and method | |
US5989779A (en) | Fabrication method employing and energy beam source | |
US6127273A (en) | Process for anisotropic plasma etching of different substrates | |
US4427516A (en) | Apparatus and method for plasma-assisted etching of wafers | |
US6780491B1 (en) | Microstructures including hydrophilic particles | |
US6139913A (en) | Kinetic spray coating method and apparatus | |
US20040209190A1 (en) | Pattern forming method and apparatus used for semiconductor device, electric circuit, display module, and light emitting device | |
US5345145A (en) | Method and apparatus for generating highly dense uniform plasma in a high frequency electric field | |
WO1996031291A1 (en) | Method of coating a thin film on a substrate | |
US7579050B2 (en) | Method for focusing patterning nano-sized structure | |
US20010007275A1 (en) | Wafer flattening process and system | |
WO1996032741A1 (en) | Method for water vapor enhanced charged-particle-beam machining | |
CA1157575A (en) | Reducing charging effects in charged-particle-beam lithography | |
JP2002510548A (en) | Energy release system for photolithography | |
WO2006089134A2 (en) | Apparatus and method for surface preparation using energetic and reactive cluster beams | |
US6837963B2 (en) | Semiconductor device, method of producing a semiconductor device, and semiconductor substrate cleaning apparatus used for the production method | |
WO2009036218A1 (en) | Apparatus and method for cleaning wafer edge using energetic particle beams | |
US5310621A (en) | Semiconductor photolithography with superficial plasma etch | |
KR960026090A (en) | Photoresist coating method and apparatus | |
Mahoney | Microcluster—surface interactions: a new method for surface cleaning | |
JPH01215986A (en) | Dry etching method | |
EP0768708A2 (en) | Method for forming bumps on substrates for electronic components | |
CN1154577A (en) | Method and apparatus for forming bumps on substrates |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |