US20040164383A1 - Heat transfer through covalent bonding of thermal interface material - Google Patents

Heat transfer through covalent bonding of thermal interface material Download PDF

Info

Publication number
US20040164383A1
US20040164383A1 US10/781,314 US78131404A US2004164383A1 US 20040164383 A1 US20040164383 A1 US 20040164383A1 US 78131404 A US78131404 A US 78131404A US 2004164383 A1 US2004164383 A1 US 2004164383A1
Authority
US
United States
Prior art keywords
thermal interface
heat
interface material
generating device
heat dissipating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/781,314
Inventor
Youzhi Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US10/781,314 priority Critical patent/US20040164383A1/en
Publication of US20040164383A1 publication Critical patent/US20040164383A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Definitions

  • the present invention relates to integrated circuit (IC) package technology and more particularly to improved heat dissipating from integrated circuit packages.
  • IC integrated circuit
  • An IC package typically includes an IC mounted on a package substrate.
  • a heat dissipating device such as an integrated heat spreader (IHS) or a thermal plate, may be coupled to a backside surface of the IC, in an effort to remove heat from the IC. Imperfections in the mating surfaces of the IC and the heat dissipating device may result in small gaps of air between the devices. Because air is a poor conductor of heat, these gaps may serve as a barrier to heat transfer.
  • a thermal interface material (TIM) with a higher thermal conductivity than air may be disposed between the IC and the heat dissipating device in an effort to fill these gaps and enhance heat transfer.
  • the TIM is typically made of a polymer material in combination with filler components made of a thermally conductive material, such as metal or ceramic.
  • the polymer material may promote adhesion with the IC and the heat dissipating device and may bind the filler components together. Because the polymer material typically has a low thermal conductivity, the thermally conductive filler components may provide the main path for heat transfer. Therefore, heat transfer may be dependent on physical contact between filler components and the surfaces of the IC and the heat dissipating device, as well as physical contact between adjacent filler components in the bulk TIM.
  • layers of polymer material may prevent direct physical contact between filler components and the surfaces of the IC and the heat dissipating device, which may increase contact thermal resistance at these interfaces. Further, layers of polymer material may also fill gaps between adjacent filler components which may prevent direct physical contact between the surfaces of the adjacent filler components and may increase bulk thermal resistance of the TIM.
  • FIG. 1 illustrates an exemplary thermal interface between an integrated circuit (IC) and a heat dissipating device according to one embodiment of the present invention.
  • IC integrated circuit
  • FIG. 2 illustrates a flow diagram according to one embodiment of the present invention.
  • FIG. 3 illustrates an exemplary hybrid polymer according to one embodiment of the present invention.
  • FIG. 4 illustrates an integrated circuit (IC) package according to one embodiment of the present invention.
  • FIG. 5 illustrates a flow diagram according to another embodiment of the present invention.
  • the present invention utilizes covalent bonding to reduce thermal resistance across an interface between a heat generating device, such as an integrated circuit (IC), and a heat dissipating device.
  • a heat generating device such as an integrated circuit (IC)
  • covalent bonds may be formed at an interface between a thermal interface material (TIM) and the heat generating device and/or the heat dissipating device.
  • TIM thermal interface material
  • Covalent bonding may result in stronger bonding between atoms and molecules which may result in more effective heat transfer than may be possible using traditional methods that rely on physical contact for heat transfer.
  • covalent bonding between thermally conductive filler components and a polymer-based material may also reduce bulk thermal resistance of the TIM.
  • FIG. 1 illustrates an exemplary thermal interface 100 between an IC 102 and a heat dissipating device 104 , according to one embodiment of the present invention.
  • the heat dissipating device may be any suitable heat dissipating device, such as an integrated heat spreader (IHS), a thermal plate, a heat pipe lid, or a heat sink.
  • the heat dissipating device may be made of any suitable thermally conductive material, such as a metal.
  • the heat dissipating device may be aluminum or copper.
  • a TIM 106 may be disposed between a backside surface of the IC and a bottom surface of the heat dissipating device to enhance heat flow from the IC to the heat dissipating device.
  • the TIM may be any suitable type TIM, such as a thermal grease, thermal adhesive, a thermal gel, an elastomer, a phase change material, or a thermal gap filler.
  • the TIM may comprise a polymer material 108 with thermally conductive filler components 110 dispersed therein. Intermediate interfaces 112 and 114 may be formed between the IC and the TIM, and between the TIM and the heat dissipating device, respectively.
  • the total thermal resistance ( ⁇ TOTAL ) across the interface between the IC and the heat dissipating device may be defined as the sum of the contact thermal resistance at the interface between the IC and the TIM ( ⁇ IC-TIM ), the bulk thermal resistance of the TIM ( ⁇ BULK ), and the contact thermal resistance at the interface between the TIM and the heat dissipating device ( ⁇ TIM-HDD ):
  • ⁇ TOTAL ⁇ BULK + ⁇ IC-TIM + ⁇ TIM-HDD .
  • ⁇ TOTAL for a typical interface between an IC and a heat dissipating device may usually be in the range of 0.5 to 1.5 cm 2 C/W, for one embodiment of the present invention, ⁇ TOTAL may be less than 0.45 cm 2 C/W.
  • FIG. 2 illustrates a flow diagram 200 illustrating exemplary operations of a method according to one embodiment of the present invention.
  • the operations of flow diagram 200 may be described with reference to the exemplary embodiment illustrated in FIG. 1. However, it should be understood that the operations of flow diagram 200 may result in embodiments other than the exemplary embodiment of FIG. 1.
  • a TIM with increased thermal conductivity is provided.
  • a TIM with increased bulk thermal conductivity may have reduced bulk thermal resistance due to an inverse relationship between thermal resistance and thermal conductivity.
  • bulk thermal conductivity may be increased by forming covalent bonds between filler components 110 , such as covalent bond 120 and/or by forming covalent bonds between filler components 110 and the polymer material 108 , such as covalent bond 122 .
  • Covalent bonds may be represented by double lines in FIG. 1.
  • TIMs with increased bulk thermal conductivity due to covalent bonding include molecular composites, nanocomposites, thermally conductive polymers, and crystalline polymers.
  • Increased bulk thermal conductivity may be defined as a bulk thermal conductivity greater than 0.5 W/mK.
  • a TIM may be provided with a bulk thermal conductivity greater than 4 W/mK.
  • a TIM may comprise a molecular composite incorporating a hybrid polymer with covalent bonding between thermally conductive components.
  • FIG. 3 illustrates an exemplary hybrid polymer 300 , comprising metal or ceramic filler components 310 with covalent bonds 320 between the filler components.
  • the hybrid polymer may be produced by organometallic or organic/inorganic synthesis.
  • filler components may be treated to promote covalent bonding with the polymer base material.
  • metal or ceramic filler components may be treated with an oxidizing agent or with a coupling agent, such as silane, to form OH, NH and/or COOH groups, which may react with a polymer material, such as a COOH terminated polymer material.
  • the TIM is covalently bonded to a bottom surface of a heat dissipating device and/or a backside surface of a heat generating device.
  • the TIM may be covalently bonded to the bottom surface of the heat dissipating device 102 via covalent bonds 124 and/or the backside surface of the IC 104 via covalent bonds 126 .
  • Covalently bonding the TIM may reduce contact thermal resistance at the intermediate interfaces 112 and 114 between the TIM and surfaces of the IC and the heat dissipating device, respectively.
  • a typical contact thermal resistance at one of the intermediate interfaces may be in the range of 0.15 to 0.25 cm 2 C/W, for one embodiment of the present invention, the sum of the contact thermal resistances at both intermediate interfaces may be less than 0.15 cm 2 C/W.
  • Various processes may be used to covalently bond the TIM to one or both of the surfaces, such as electrodeposition of a polymer or oligomer, electropolymerization of a monomer, surface grafting, and chemical treatment of the surface.
  • Electrodeposition of an electroactive polymer or oligomer may utilize the heat dissipating device or IC as an electrical conductor or semiconductor.
  • the hybrid polymer 300 illustrated in FIG. 3 may be suitable for electrodeposition onto a metal surface of the heat dissipating device or a silicon surface of the IC.
  • the hybrid polymer may have electroactive end groups, such as NH n + and COO ⁇ . Positive or negative charges may be introduced at one end of the polymer chain, while discharges from the other end of the polymer chain may be deposited on a surface of the heat dissipating device or IC. Electrodeposition may also produce physical bonding superior to traditional methods of adhesion, which may also reduce contact thermal resistance.
  • Elecropolymerization may comprise deposition of a monomer on a surface of the IC and/or the heat dissipating device.
  • the monomer may be cyclic or unsaturated.
  • the heat dissipating device and/or the IC may be utilized as an electrical conductor or semiconductor. Free radical, anionic, or cationic species may be generated to initialize chain polymerization of the monomer, which may result in covalent bonding between the polymer and the surface.
  • Surface graft treatment may also result in covalent bonding at a surface of the IC and/or heat dissipating device.
  • surface graft polymerization may be applied to a monomer deposited on the surface to be treated.
  • a pre-formed polymer or oligomer may be grafted onto the surface. Suitable grafting techniques are well known in the art.
  • a surface of the heat dissipating device and/or the IC may be chemically treated to generate a functional group which may react with the TIM to form covalent bonds.
  • a silicon surface of the IC may be oxidized by an oxidizing agent such as KMnO 4 , to generate COOH or OH which may react with a polymer-based TIM, such as an epoxy resin.
  • a surface of the heat dissipating device may be treated to form aluminum oxide (Al 2 O 3 ), which may react with a COOH terminated TIM.
  • the heat dissipating device is thermally coupled to the heat generating device with the TIM disposed between the bottom surface of the heat dissipating device and the backside surface of the heat generating device.
  • the TIM may be deposited on the backside surface of the IC and the heat dissipating device may then be coupled to the backside surface of the IC.
  • the TIM may be applied to the bottom surface of the heat dissipating device and the heat dissipating device may then be coupled to the backside surface of the IC.
  • an electroactive polymer may be electrodeposited on the bottom surface of the heat dissipating device, while the backside surface of the IC may be chemically treated to form covalent bonds with the TIM.
  • treating a surface of only one of the devices may reduce the total thermal resistance enough to satisfy heat dissipating requirements of a package application. Treating only one device may reduce manufacturing costs.
  • reducing contact resistance may reduce total thermal resistance enough to satisfy heat dissipation requirements without using a TIM with increased bulk thermal conductivity.
  • using a TIM with increased bulk thermal conductivity may adequately reduce total thermal resistance without reducing contact resistance.
  • FIG. 4 illustrates an exemplary IC package 400 , according to one embodiment of the present invention.
  • the IC package may be a flip chip package, also known as control collapse chip connection (C4) package, having an IC 402 mounted on a package substrate 408 , which may be mounted on a PC board 410 .
  • An integrated heat spreader (IHS) 404 may be thermally coupled to a backside surface of the IC with a first TIM 406 disposed between a bottom surface of the IHS and a backside surface of the IC.
  • the IHS may be mounted on standoffs 412 attached to the PC board. The previously described methods may be applied to reduce the total thermal resistance across the interface between the IC and the IHS.
  • a heat sink 414 may be thermally coupled to a top surface of the IHS.
  • the heat sink may include fins or other protrusions to increase its surface area, which may increase its ability to remove heat from the IC package.
  • a second TIM 416 may be disposed between the top surface of the IHS and a bottom surface of the heat sink.
  • the previously described methods may be applied to reduce the total thermal resistance across the interface between the IHS and the heat sink.
  • FIG. 5 illustrates a flow diagram 500 illustrating exemplary operations of a method to fabricate an IC package according to one embodiment.
  • a first TIM is covalently bonded to a bottom surface of an IHS.
  • the IHS is thermally coupled to a backside surface of an IC, the TIM disposed between the bottom surface of the IHS and the backside surface of the IC.
  • a second TIM is convalently bonded to a bottom surface of a heat sink and/or a backside surface of the IHS.
  • the heat sink is thermally coupled to the IHS, the second TIM disposed between the bottom surface of the heat sink and the top surface of the IHS.

Abstract

A thermal interface material may be covalently bonded to a bottom surface of a heat dissipating device and/or a backside surface of a heat generating device. The heat dissipating device may be thermally coupled to the heat generating device, the thermal interface material disposed between the bottom surface of the heat dissipating device and the backside surface of the heat generating device. The thermal interface material may comprise a polymer material with thermally conductive filler components dispersed therein. For one embodiment, the thermally conductive filler components may be covalently bonded together. For one embodiment, the thermally conductive filler components may be covalently bonded with the polymer material.

Description

    FIELD OF THE INVENTION
  • The present invention relates to integrated circuit (IC) package technology and more particularly to improved heat dissipating from integrated circuit packages. [0001]
    • BACKGROUND OF THE INVENTION
  • As integrated circuits (ICs) become smaller and faster, the amount of heat generated per square inch may increase accordingly. Therefore, one of the challenges presented to IC package designers is to dissipate heat. An IC package typically includes an IC mounted on a package substrate. A heat dissipating device, such as an integrated heat spreader (IHS) or a thermal plate, may be coupled to a backside surface of the IC, in an effort to remove heat from the IC. Imperfections in the mating surfaces of the IC and the heat dissipating device may result in small gaps of air between the devices. Because air is a poor conductor of heat, these gaps may serve as a barrier to heat transfer. A thermal interface material (TIM) with a higher thermal conductivity than air may be disposed between the IC and the heat dissipating device in an effort to fill these gaps and enhance heat transfer. [0002]
  • The TIM is typically made of a polymer material in combination with filler components made of a thermally conductive material, such as metal or ceramic. The polymer material may promote adhesion with the IC and the heat dissipating device and may bind the filler components together. Because the polymer material typically has a low thermal conductivity, the thermally conductive filler components may provide the main path for heat transfer. Therefore, heat transfer may be dependent on physical contact between filler components and the surfaces of the IC and the heat dissipating device, as well as physical contact between adjacent filler components in the bulk TIM. [0003]
  • However, layers of polymer material may prevent direct physical contact between filler components and the surfaces of the IC and the heat dissipating device, which may increase contact thermal resistance at these interfaces. Further, layers of polymer material may also fill gaps between adjacent filler components which may prevent direct physical contact between the surfaces of the adjacent filler components and may increase bulk thermal resistance of the TIM. [0004]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 illustrates an exemplary thermal interface between an integrated circuit (IC) and a heat dissipating device according to one embodiment of the present invention. [0005]
  • FIG. 2 illustrates a flow diagram according to one embodiment of the present invention. [0006]
  • FIG. 3 illustrates an exemplary hybrid polymer according to one embodiment of the present invention. [0007]
  • FIG. 4 illustrates an integrated circuit (IC) package according to one embodiment of the present invention. [0008]
  • FIG. 5 illustrates a flow diagram according to another embodiment of the present invention. [0009]
    • DETAILED DESCRIPTION
  • In the following description, numerous specific details are set forth, such as material types and ranges, in order to provide a thorough understanding of the present invention. However, it will be obvious to one of skill in the art that the invention may be practiced without these specific details. In other instances, well-known elements and processing techniques have not been shown in particular detail in order to avoid unnecessarily obscuring the present invention. [0010]
  • The present invention utilizes covalent bonding to reduce thermal resistance across an interface between a heat generating device, such as an integrated circuit (IC), and a heat dissipating device. For one embodiment, covalent bonds may be formed at an interface between a thermal interface material (TIM) and the heat generating device and/or the heat dissipating device. Covalent bonding may result in stronger bonding between atoms and molecules which may result in more effective heat transfer than may be possible using traditional methods that rely on physical contact for heat transfer. For one embodiment, covalent bonding between thermally conductive filler components and a polymer-based material may also reduce bulk thermal resistance of the TIM. [0011]
  • FIG. 1 illustrates an exemplary [0012] thermal interface 100 between an IC 102 and a heat dissipating device 104, according to one embodiment of the present invention. The heat dissipating device may be any suitable heat dissipating device, such as an integrated heat spreader (IHS), a thermal plate, a heat pipe lid, or a heat sink. The heat dissipating device may be made of any suitable thermally conductive material, such as a metal. For one embodiment, the heat dissipating device may be aluminum or copper. A TIM 106 may be disposed between a backside surface of the IC and a bottom surface of the heat dissipating device to enhance heat flow from the IC to the heat dissipating device. The TIM may be any suitable type TIM, such as a thermal grease, thermal adhesive, a thermal gel, an elastomer, a phase change material, or a thermal gap filler.
  • As illustrated, the TIM may comprise a [0013] polymer material 108 with thermally conductive filler components 110 dispersed therein. Intermediate interfaces 112 and 114 may be formed between the IC and the TIM, and between the TIM and the heat dissipating device, respectively. The total thermal resistance (θTOTAL) across the interface between the IC and the heat dissipating device may be defined as the sum of the contact thermal resistance at the interface between the IC and the TIM (θIC-TIM), the bulk thermal resistance of the TIM (θBULK), and the contact thermal resistance at the interface between the TIM and the heat dissipating device (θTIM-HDD):
  • θTOTAL=θBULK+θIC-TIM+θTIM-HDD.
  • While θ[0014] TOTAL for a typical interface between an IC and a heat dissipating device may usually be in the range of 0.5 to 1.5 cm2C/W, for one embodiment of the present invention, θTOTAL may be less than 0.45 cm2C/W.
  • FIG. 2 illustrates a flow diagram [0015] 200 illustrating exemplary operations of a method according to one embodiment of the present invention. The operations of flow diagram 200 may be described with reference to the exemplary embodiment illustrated in FIG. 1. However, it should be understood that the operations of flow diagram 200 may result in embodiments other than the exemplary embodiment of FIG. 1.
  • For [0016] block 210, a TIM with increased thermal conductivity is provided. A TIM with increased bulk thermal conductivity may have reduced bulk thermal resistance due to an inverse relationship between thermal resistance and thermal conductivity. For one embodiment, bulk thermal conductivity may be increased by forming covalent bonds between filler components 110, such as covalent bond 120 and/or by forming covalent bonds between filler components 110 and the polymer material 108, such as covalent bond 122. Covalent bonds may be represented by double lines in FIG. 1.
  • Examples of TIMs with increased bulk thermal conductivity due to covalent bonding include molecular composites, nanocomposites, thermally conductive polymers, and crystalline polymers. Increased bulk thermal conductivity may be defined as a bulk thermal conductivity greater than 0.5 W/mK. For one embodiment, a TIM may be provided with a bulk thermal conductivity greater than 4 W/mK. [0017]
  • For one embodiment, a TIM may comprise a molecular composite incorporating a hybrid polymer with covalent bonding between thermally conductive components. For example, FIG. 3 illustrates an [0018] exemplary hybrid polymer 300, comprising metal or ceramic filler components 310 with covalent bonds 320 between the filler components. The hybrid polymer may be produced by organometallic or organic/inorganic synthesis.
  • To produce the TIM, for one embodiment, filler components may be treated to promote covalent bonding with the polymer base material. For example, metal or ceramic filler components may be treated with an oxidizing agent or with a coupling agent, such as silane, to form OH, NH and/or COOH groups, which may react with a polymer material, such as a COOH terminated polymer material. [0019]
  • For [0020] block 220 of FIG. 2, the TIM is covalently bonded to a bottom surface of a heat dissipating device and/or a backside surface of a heat generating device. For example, the TIM may be covalently bonded to the bottom surface of the heat dissipating device 102 via covalent bonds 124 and/or the backside surface of the IC 104 via covalent bonds 126. Covalently bonding the TIM may reduce contact thermal resistance at the intermediate interfaces 112 and 114 between the TIM and surfaces of the IC and the heat dissipating device, respectively.
  • For example, while a typical contact thermal resistance at one of the intermediate interfaces may be in the range of 0.15 to 0.25 cm[0021] 2C/W, for one embodiment of the present invention, the sum of the contact thermal resistances at both intermediate interfaces may be less than 0.15 cm2C/W. Various processes may be used to covalently bond the TIM to one or both of the surfaces, such as electrodeposition of a polymer or oligomer, electropolymerization of a monomer, surface grafting, and chemical treatment of the surface.
  • Electrodeposition of an electroactive polymer or oligomer may utilize the heat dissipating device or IC as an electrical conductor or semiconductor. For example, the [0022] hybrid polymer 300 illustrated in FIG. 3 may be suitable for electrodeposition onto a metal surface of the heat dissipating device or a silicon surface of the IC. As illustrated, the hybrid polymer may have electroactive end groups, such as NHn + and COO−. Positive or negative charges may be introduced at one end of the polymer chain, while discharges from the other end of the polymer chain may be deposited on a surface of the heat dissipating device or IC. Electrodeposition may also produce physical bonding superior to traditional methods of adhesion, which may also reduce contact thermal resistance.
  • Elecropolymerization may comprise deposition of a monomer on a surface of the IC and/or the heat dissipating device. The monomer may be cyclic or unsaturated. As with electrodeposition, the heat dissipating device and/or the IC may be utilized as an electrical conductor or semiconductor. Free radical, anionic, or cationic species may be generated to initialize chain polymerization of the monomer, which may result in covalent bonding between the polymer and the surface. [0023]
  • Surface graft treatment may also result in covalent bonding at a surface of the IC and/or heat dissipating device. For one embodiment, surface graft polymerization may be applied to a monomer deposited on the surface to be treated. Alternatively, a pre-formed polymer or oligomer may be grafted onto the surface. Suitable grafting techniques are well known in the art. [0024]
  • For one embodiment, a surface of the heat dissipating device and/or the IC may be chemically treated to generate a functional group which may react with the TIM to form covalent bonds. For example, a silicon surface of the IC may be oxidized by an oxidizing agent such as KMnO[0025] 4, to generate COOH or OH which may react with a polymer-based TIM, such as an epoxy resin. As another example, a surface of the heat dissipating device may be treated to form aluminum oxide (Al2O3), which may react with a COOH terminated TIM.
  • For [0026] block 230 of FIG. 2, the heat dissipating device is thermally coupled to the heat generating device with the TIM disposed between the bottom surface of the heat dissipating device and the backside surface of the heat generating device. For one embodiment, the TIM may be deposited on the backside surface of the IC and the heat dissipating device may then be coupled to the backside surface of the IC. For another embodiment, the TIM may be applied to the bottom surface of the heat dissipating device and the heat dissipating device may then be coupled to the backside surface of the IC.
  • For different embodiments, the different treatment processes described above may be combined in various manners. For example, an electroactive polymer may be electrodeposited on the bottom surface of the heat dissipating device, while the backside surface of the IC may be chemically treated to form covalent bonds with the TIM. For another embodiment, treating a surface of only one of the devices may reduce the total thermal resistance enough to satisfy heat dissipating requirements of a package application. Treating only one device may reduce manufacturing costs. For one embodiment, reducing contact resistance may reduce total thermal resistance enough to satisfy heat dissipation requirements without using a TIM with increased bulk thermal conductivity. For another embodiment, using a TIM with increased bulk thermal conductivity may adequately reduce total thermal resistance without reducing contact resistance. [0027]
  • FIG. 4 illustrates an [0028] exemplary IC package 400, according to one embodiment of the present invention. The IC package may be a flip chip package, also known as control collapse chip connection (C4) package, having an IC 402 mounted on a package substrate 408, which may be mounted on a PC board 410. An integrated heat spreader (IHS) 404 may be thermally coupled to a backside surface of the IC with a first TIM 406 disposed between a bottom surface of the IHS and a backside surface of the IC. The IHS may be mounted on standoffs 412 attached to the PC board. The previously described methods may be applied to reduce the total thermal resistance across the interface between the IC and the IHS.
  • As illustrated, in an effort to further enhance heat transfer from the IC package, a [0029] heat sink 414 may be thermally coupled to a top surface of the IHS. The heat sink may include fins or other protrusions to increase its surface area, which may increase its ability to remove heat from the IC package. A second TIM 416 may be disposed between the top surface of the IHS and a bottom surface of the heat sink. For one embodiment, the previously described methods may be applied to reduce the total thermal resistance across the interface between the IHS and the heat sink.
  • FIG. 5 illustrates a flow diagram [0030] 500 illustrating exemplary operations of a method to fabricate an IC package according to one embodiment. For block 510, a first TIM is covalently bonded to a bottom surface of an IHS. For block 520, the IHS is thermally coupled to a backside surface of an IC, the TIM disposed between the bottom surface of the IHS and the backside surface of the IC. For block 530, a second TIM is convalently bonded to a bottom surface of a heat sink and/or a backside surface of the IHS. For block 540, the heat sink is thermally coupled to the IHS, the second TIM disposed between the bottom surface of the heat sink and the top surface of the IHS.
  • In the foregoing description, the invention has been described with reference to specific exemplary embodiments thereof. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit or scope of the present invention as defined in the appended claims. The specification and drawings are, accordingly, to be regarded in an illustrative rather than a restrictive sense. [0031]

Claims (26)

What is claimed is:
1. A method comprising:
covalently bonding a thermal interface material to a bottom surface of a heat dissipating device and/or a backside surface of a heat generating device; and
thermally coupling the heat dissipating device to the heat generating device, the thermal interface material disposed between the bottom surface of the heat dissipating device and the backside surface of the heat generating device.
2. The method of claim 1, wherein covalently bonding the thermal interface material to a bottom surface of a heat dissipating device and/or a backside surface of a heat generating device comprises electropolymerization of a monomer.
3. The method of claim 1, wherein covalently bonding the thermal interface material to a bottom surface of a heat dissipating device and/or a backside surface of a heat generating device comprises electrodeposition of an electroactive polymer.
4. The method of claim 3, wherein electrodeposition of an electroactive polymer comprises electrodeposition of an electroactive polymer on a metal surface of the heat dissipating device.
5. The method of claim 3, wherein the electroactive polymer has an electroactive end group —NHn +.
6. The method of claim 3, wherein the electroactive polymer has an electroactive end group —COOH or —COO—.
7. The method of claim 1, wherein covalently bonding the thermal interface material to a bottom surface of a heat dissipating device and/or a backside surface of a heat generating device comprises surface grafting a polymer on the bottom surface of a heat dissipating device and/or a backside surface of a heat generating device.
8. The method of claim 1, wherein covalently bonding the thermal interface material to a bottom surface of a heat dissipating device and/or a backside surface of a heat generating device comprises chemically treating the backside surface of the heat generating device to generate a functional group that can react with the thermal interface material to form covalent bonds.
9. The method of claim 8, wherein chemically treating the backside surface of the heat generating device comprises oxidizing a silicon surface of the heat generating device with an oxidizing agent.
10. The method of claim 9, wherein the oxidizing agent is KMnO4, and the thermal interface material comprises an epoxy resin.
11. The method of claim 1, wherein the heat generating device is an integrated circuit and the heat dissipating device is an integrated heat spreader.
12. The method of claim 11, wherein the thermal interface material has a bulk thermal conductivity greater than 4 W/mK.
13. A method comprising:
applying a thermal interface material to a backside surface of a heat generating device and/or a bottom surface of a heat dissipating device, wherein the thermal interface material comprises a polymer material with thermally conductive filler components dispersed therein, the thermally conductive filler components covalently bonded together and/or covalently bonded with the polymer material; and
attaching the heat dissipating device to the heat generating device, the thermal interface material disposed between the backside surface of the heat generating device and the bottom surface of the heat dissipating device.
14. The method of claim 13, wherein the TIM comprises a molecular composite material with covalent bonding between metal or ceramic filler components.
15. The method of claim 13, comprising producing the thermal interface material by chemically treating metal or ceramic filler components to form a functional group that can react with the polymer material to form covalent bonds.
16. An apparatus, comprising:
a heat generating device;
a heat dissipating device thermally coupled to a backside surface of the heat generating device; and
a first thermal interface material disposed between the backside surface of the heat generating device and a bottom surface of the heat dissipating device, the first thermal interface material covalently bonded to the bottom surface of the heat dissipating device and/or the backside surface of the heat generating device.
17. The apparatus of claim 16, wherein the heat generating device is an integrated circuit.
18. The apparatus of claim 17, wherein the first thermal interface material comprises an epoxy resin covalently bonded to the backside surface of the integrated circuit.
19. The apparatus of claim 16, wherein the first thermal interface material comprises a molecular composite material.
20. The apparatus of claim 16, wherein the first thermal interface material comprises a nanocomposite material.
21. The apparatus of claim 16, wherein the first thermal interface material comprises a thermally conductive polymer.
22. The apparatus of claim 16, wherein the first thermal interface material has a thermal conductivity greater than 4 W/mK.
23. The apparatus of claim 16, comprising an electroactive polymer bonded to the heat dissipating device by electrodeposition.
24. The apparatus of claim 16, wherein the heat dissipating device is an integrated heat spreader.
25. The apparatus of claim 24, comprising a heat sink thermally coupled to a top surface of the integrated heat spreader.
26. The apparatus of claim 25, comprising a second thermal interface material disposed between the top surface of the integrated heat spreader and a bottom surface of the heat sink, the second thermal interface material covalently bonded to the bottom surface of the heat sink and/or the top surface of the integrated heat spreader.
US10/781,314 2002-01-31 2004-02-17 Heat transfer through covalent bonding of thermal interface material Abandoned US20040164383A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/781,314 US20040164383A1 (en) 2002-01-31 2004-02-17 Heat transfer through covalent bonding of thermal interface material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/062,255 US6761813B2 (en) 2002-01-31 2002-01-31 Heat transfer through covalent bonding of thermal interface material
US10/781,314 US20040164383A1 (en) 2002-01-31 2004-02-17 Heat transfer through covalent bonding of thermal interface material

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/062,255 Division US6761813B2 (en) 2002-01-31 2002-01-31 Heat transfer through covalent bonding of thermal interface material

Publications (1)

Publication Number Publication Date
US20040164383A1 true US20040164383A1 (en) 2004-08-26

Family

ID=27610280

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/062,255 Expired - Fee Related US6761813B2 (en) 2002-01-31 2002-01-31 Heat transfer through covalent bonding of thermal interface material
US10/781,314 Abandoned US20040164383A1 (en) 2002-01-31 2004-02-17 Heat transfer through covalent bonding of thermal interface material

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US10/062,255 Expired - Fee Related US6761813B2 (en) 2002-01-31 2002-01-31 Heat transfer through covalent bonding of thermal interface material

Country Status (1)

Country Link
US (2) US6761813B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040099410A1 (en) * 2002-11-26 2004-05-27 Prosenjit Ghosh Decreasing thermal contact resistance at a material interface
US20130105970A1 (en) * 2010-05-26 2013-05-02 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Conductive Posts and Heat Sink Over Semiconductor Die Using Leadframe
US9269691B2 (en) 2010-05-26 2016-02-23 Stats Chippac, Ltd. Semiconductor device and method of making an embedded wafer level ball grid array (EWLB) package on package (POP) device with a slotted metal carrier interposer

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7473995B2 (en) * 2002-03-25 2009-01-06 Intel Corporation Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly
US7846778B2 (en) * 2002-02-08 2010-12-07 Intel Corporation Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly
TWI286832B (en) * 2002-11-05 2007-09-11 Advanced Semiconductor Eng Thermal enhance semiconductor package
US6841867B2 (en) * 2002-12-30 2005-01-11 Intel Corporation Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials
KR100510517B1 (en) * 2003-01-29 2005-08-26 삼성전자주식회사 Method for fabricating flip chip package having protective cap
US7112472B2 (en) * 2003-06-25 2006-09-26 Intel Corporation Methods of fabricating a composite carbon nanotube thermal interface device
US7550097B2 (en) * 2003-09-03 2009-06-23 Momentive Performance Materials, Inc. Thermal conductive material utilizing electrically conductive nanoparticles
KR100542190B1 (en) * 2003-10-17 2006-01-11 삼성에스디아이 주식회사 Plasma display apparatus having heat dissipating structure for driver ic
US6958548B2 (en) * 2003-11-19 2005-10-25 Freescale Semiconductor, Inc. Semiconductor device with magnetically permeable heat sink
US7612370B2 (en) * 2003-12-31 2009-11-03 Intel Corporation Thermal interface
US7508673B2 (en) * 2004-03-04 2009-03-24 Samsung Sdi Co., Ltd. Heat dissipating apparatus for plasma display device
KR20070006682A (en) * 2004-03-30 2007-01-11 허니웰 인터내셔널 인코포레이티드 Heat spreader constructions, integrated circuitry, methods of forming heat spreader constructions, and methods of forming integrated circuitry
US20050286234A1 (en) * 2004-06-29 2005-12-29 International Business Machines Corporation Thermally conductive composite interface and methods of fabrication thereof for an electronic assembly
TW200633171A (en) * 2004-11-04 2006-09-16 Koninkl Philips Electronics Nv Nanotube-based fluid interface material and approach
US20080166552A1 (en) * 2006-11-06 2008-07-10 Arlon, Inc. Silicone based compositions for thermal interface materials
US20080160330A1 (en) * 2006-12-29 2008-07-03 David Song Copper-elastomer hybrid thermal interface material to cool under-substrate silicon
TW200850127A (en) * 2007-06-06 2008-12-16 Delta Electronics Inc Electronic device with passive heat-dissipating mechanism
US20090077553A1 (en) * 2007-09-13 2009-03-19 Jian Tang Parallel processing of platform level changes during system quiesce
WO2011040253A1 (en) * 2009-09-30 2011-04-07 日本電気株式会社 Structure for cooling electronic component, and electronic apparatus
US20110228481A1 (en) * 2010-03-19 2011-09-22 Domintech Co., Ltd. Thermally conductive interface means
JP5518106B2 (en) * 2012-01-17 2014-06-11 三菱電機株式会社 Integrated electric power steering system
JP5893764B2 (en) * 2012-03-22 2016-03-23 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Thermal interface material, method of providing thermal interface material, method of providing thermal interface, and light emitting device
US20140036435A1 (en) * 2012-08-03 2014-02-06 Mosaid Technologies Incorporated Storage system having a heatsink
US9318450B1 (en) * 2014-11-24 2016-04-19 Raytheon Company Patterned conductive epoxy heat-sink attachment in a monolithic microwave integrated circuit (MMIC)
CN110055038A (en) 2018-01-19 2019-07-26 天津莱尔德电子材料有限公司 The non-silicone putty of highly conforming properties and the thermal interfacial material comprising it
CN110777403B (en) * 2019-08-08 2021-05-25 安徽德诠新材料科技有限公司 Preparation method of foam metal coating with high specific surface area for heat dissipation

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5403783A (en) * 1992-12-28 1995-04-04 Hitachi, Ltd. Integrated circuit substrate with cooling accelerator substrate
US5585671A (en) * 1994-10-07 1996-12-17 Nagesh; Voddarahalli K. Reliable low thermal resistance package for high power flip clip ICs
US6008536A (en) * 1997-06-23 1999-12-28 Lsi Logic Corporation Grid array device package including advanced heat transfer mechanisms
US20010052652A1 (en) * 1998-06-24 2001-12-20 Charles Smith Electronic device having fibrous interface
US20030122242A1 (en) * 2002-01-02 2003-07-03 Takeuchi Timothy M. Semiconductor package with integrated heat spreader attached to a thermally conductive substrate core
US20030128521A1 (en) * 2002-01-04 2003-07-10 Matayabas James C. Electronic packages having good reliability comprising low modulus thermal interface materials
US6707236B2 (en) * 2002-01-29 2004-03-16 Sri International Non-contact electroactive polymer electrodes
US6809462B2 (en) * 2000-04-05 2004-10-26 Sri International Electroactive polymer sensors
US6812064B2 (en) * 2001-11-07 2004-11-02 Micron Technology, Inc. Ozone treatment of a ground semiconductor die to improve adhesive bonding to a substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6673434B2 (en) * 1999-12-01 2004-01-06 Honeywell International, Inc. Thermal interface materials

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5403783A (en) * 1992-12-28 1995-04-04 Hitachi, Ltd. Integrated circuit substrate with cooling accelerator substrate
US5585671A (en) * 1994-10-07 1996-12-17 Nagesh; Voddarahalli K. Reliable low thermal resistance package for high power flip clip ICs
US6008536A (en) * 1997-06-23 1999-12-28 Lsi Logic Corporation Grid array device package including advanced heat transfer mechanisms
US20010052652A1 (en) * 1998-06-24 2001-12-20 Charles Smith Electronic device having fibrous interface
US6809462B2 (en) * 2000-04-05 2004-10-26 Sri International Electroactive polymer sensors
US6812064B2 (en) * 2001-11-07 2004-11-02 Micron Technology, Inc. Ozone treatment of a ground semiconductor die to improve adhesive bonding to a substrate
US20030122242A1 (en) * 2002-01-02 2003-07-03 Takeuchi Timothy M. Semiconductor package with integrated heat spreader attached to a thermally conductive substrate core
US20030128521A1 (en) * 2002-01-04 2003-07-10 Matayabas James C. Electronic packages having good reliability comprising low modulus thermal interface materials
US6707236B2 (en) * 2002-01-29 2004-03-16 Sri International Non-contact electroactive polymer electrodes

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040099410A1 (en) * 2002-11-26 2004-05-27 Prosenjit Ghosh Decreasing thermal contact resistance at a material interface
US7210227B2 (en) 2002-11-26 2007-05-01 Intel Corporation Decreasing thermal contact resistance at a material interface
US20070169345A1 (en) * 2002-11-26 2007-07-26 Prosenjit Ghosh Decreasing thermal contact resistance at a material interface
US20130105970A1 (en) * 2010-05-26 2013-05-02 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Conductive Posts and Heat Sink Over Semiconductor Die Using Leadframe
US9064859B2 (en) * 2010-05-26 2015-06-23 Stats Chippac, Ltd. Semiconductor device and method of forming conductive posts and heat sink over semiconductor die using leadframe
US9269691B2 (en) 2010-05-26 2016-02-23 Stats Chippac, Ltd. Semiconductor device and method of making an embedded wafer level ball grid array (EWLB) package on package (POP) device with a slotted metal carrier interposer

Also Published As

Publication number Publication date
US6761813B2 (en) 2004-07-13
US20030143382A1 (en) 2003-07-31

Similar Documents

Publication Publication Date Title
US6761813B2 (en) Heat transfer through covalent bonding of thermal interface material
US7550097B2 (en) Thermal conductive material utilizing electrically conductive nanoparticles
US7492041B2 (en) Diamond-silicon hybrid integrated heat spreader
US9892994B2 (en) Graphene based filler material of superior thermal conductivity for chip attachment in microstructure devices
US6974723B2 (en) Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials
CN1309064C (en) Structure and process for reducing die corner and edge stresses in microelectronic packages
US7013965B2 (en) Organic matrices containing nanomaterials to enhance bulk thermal conductivity
KR100245971B1 (en) Heat sink assembly using adhesion promoting layer for bonding polymeric adhesive to metal and the method of making the same
US7846779B2 (en) Power device package and method of fabricating the same
US8166645B2 (en) Method for providing near-hermetically coated, thermally protected integrated circuit assemblies
US6770968B2 (en) Method for bonding heat sinks to overmolds and device formed thereby
JP2001267473A5 (en)
CN102034718A (en) Semiconductor device and method of forming open cavity in TSV interposer to contain semiconductor die in WLCSMP
CN101996893A (en) Semiconductor device and method of forming cavity in build-up interconnect structure for short signal path between die
CN107275235A (en) Electron device package part including dielectric layer and encapsulation agent
US6255139B1 (en) Method for providing a thermal path through particles embedded in a thermal cap
US10079195B2 (en) Semiconductor chip package comprising laterally extending connectors
US6924027B2 (en) Phase change thermal interface materials including exfoliated clay
JP2001131517A (en) Thermosetting adhesive material and method for producing the same and use
CN110892525A (en) Semiconductor device with a plurality of semiconductor chips
KR100312237B1 (en) Electronic device modules using a thermally conductive compliant sheet
US20230360929A1 (en) Method for fabricating a semiconductor device module with increased reliability and a semiconductor device module
Tummala et al. Materials in next generation of packaging
CN1209801C (en) Production method of radiating plate with grounded reference potential function for radiating type chip plastic package
US20060044771A1 (en) Electronic module with conductive polymer

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION