CN103137843A - Light-emitting diode device - Google Patents

Light-emitting diode device Download PDF

Info

Publication number
CN103137843A
CN103137843A CN2011103782083A CN201110378208A CN103137843A CN 103137843 A CN103137843 A CN 103137843A CN 2011103782083 A CN2011103782083 A CN 2011103782083A CN 201110378208 A CN201110378208 A CN 201110378208A CN 103137843 A CN103137843 A CN 103137843A
Authority
CN
China
Prior art keywords
lobe body
electrode
lens
light
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011103782083A
Other languages
Chinese (zh)
Inventor
林厚德
张超雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN2011103782083A priority Critical patent/CN103137843A/en
Priority to TW100144264A priority patent/TWI463704B/en
Publication of CN103137843A publication Critical patent/CN103137843A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Abstract

A light-emitting diode device comprises a base, a light-emitting chip arranged in the chip and a lens arranged on the base and covered on the light-emitting chip. The lens is made of elastic and transparent materials and can deform to change the curvature of the lens under the effect of external force. The lens of the light-emitting diode device is elastic and made of transparent materials, the curvature can be changed through the external force, so that the light-emitting diode device can generate different optical field distribution, adapts to different environments and has better environment adapting capability.

Description

Light-emitting diode assembly
Technical field
The present invention relates to field of semiconductor illumination, relate in particular to a kind of light-emitting diode assembly that can change optical field distribution that has.
Background technology
Light-emitting diode (Light Emitting Diode, LED) has the advantages such as high brightness, long-life and low pollution as a kind of emerging light source, therefore is widely used among multiple occasion, and the trend that replaces conventional light source is arranged greatly.
Because single light-emitting diode is a point-source of light, when it makes lighting device, usually coordinate lens to carry out an optical transform to change its optical field distribution.Existing light-emitting diode assembly is according to different lighting environments and is designed with different lens, the optical field distribution of each light-emitting diode assembly is fixed, can not change according to the change of environment, therefore, the adaptive capacity to environment of this light-emitting diode assembly is relatively poor.
Summary of the invention
In view of this, be necessary to provide in fact a kind of light-emitting diode assembly that changes optical field distribution.
A kind of light-emitting diode assembly, comprise base, be located at the luminescence chip in this base and be located on this base and cover the lens of this luminescence chip, these lens are made by elasticity and transparent material, and these lens under external force deformation can occur, to change the curvature of these lens.
Light-emitting diode assembly of the present invention, its lens are made by elasticity and transparent material, can change curvature by external force, thereby make described light-emitting diode assembly produce different optical field distribution, adapt to different environment, thereby make this light-emitting diode assembly have better adaptive capacity to environment.
Description of drawings
Fig. 1 is the structural representation of the light-emitting diode assembly of first embodiment of the invention.
Fig. 2 is the structural representation of light-emitting diode assembly shown in Figure 1 when being in the second state.
Fig. 3 is the structural representation of the light-emitting diode assembly of second embodiment of the invention when being in the second state.
Fig. 4 is the structural representation of the light-emitting diode assembly of third embodiment of the invention.
Fig. 5 is the structural representation of light-emitting diode assembly shown in Figure 4 when being in the second state.
The main element symbol description
Light- emitting diode assembly 100，100a， 100b
Base
10，10a，10b
The first lobe body 11，11a，11b
First step 111
The second lobe body 12，12a，12b
Second step 121
Groove 13
The first electrode 14，14b
The second electrode 15，15b
Wire
16
Luminescence chip 20， 20b
Lens
30，30a
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
See also Fig. 1, be depicted as the light-emitting diode assembly 100 in first embodiment of the invention, this light-emitting diode assembly 100 comprises a base 10, be located at the luminescence chip 20 in this base 10 and be located on this base 10 and cover lens 30 of this luminescence chip 20.
This base 10 comprises one first lobe body 11 and one second lobe body 12, and this first lobe body 11 and the second lobe body 12 are separated from each other and lay respectively at the relative both sides of this luminescence chip 20, and this first lobe body 11 and the second lobe body 12 surround the groove 13 of accommodating this luminescence chip.The bottom of this base 10 is provided with one first electrode 14 and one second electrode 15, in the present embodiment, this first electrode 14 is located at the bottom of this first lobe body 11 and is run through the bottom of this first lobe body 11, this second electrode 15 is located at the bottom of this second lobe body 12 and is run through the bottom of this second lobe body 12, and this light-emitting diode assembly 100 can directly be mounted on circuit board by this first electrode 14 and the second electrode 15.
This luminescence chip 20 is fixed on this first electrode 14, and two electrodes of this luminescence chip 20 are connected with this first electrode 14 and the second electrode 15 respectively by two wires 16.
These lens 30 are made by elasticity and transparent material, as silica gel, rubber etc., the thickness at this lens 30 middle parts is greater than the thickness at edge, and thickness reduces to the edge gradually from the middle part, and the edge of these lens 30 is separable to be fixed on this first lobe body 11 and the second lobe body 12.These lens 30 be positioned at this luminescence chip 20 directly over, be used for to change the optical field distribution of this luminescence chip 20.
When this light-emitting diode assembly 100 environment of living in changes and requires the optical field distribution of this light-emitting diode assembly 100 also to change, because these lens 30 are made by elasticity and transparent material, therefore can make these lens 30 stretch under external force or push, these lens 30 are changed over against the curvature of the part of this luminescence chip 20, until the optical field distribution of this light-emitting diode assembly 100 meets the requirements, then these lens 30 are fixed in setting on this first lobe body 11 and the second lobe body 12.For example, the structure chart of this light-emitting diode assembly 100 after Fig. 2 shows these lens 30 and is stretched, at this moment, the thickness at the middle part of these lens 30 is less than the thickness at edge, and thickness increases to the edge gradually from the middle part, with respect to the lens 30 in Fig. 1, lens 30 curvature in Fig. 2 diminish, and make thus the light field of light-emitting diode assembly 100 be tending towards broad and soft.
Fig. 3 shows the light-emitting diode assembly 100a in second embodiment of the invention, it is similar to the light-emitting diode assembly 100 in the first embodiment, difference is the first lobe body 11a and the second lobe body 12a space of the base 10a of this light-emitting diode assembly 100a, the edge of its lens 30a is fixed on this first lobe body 11a and the second lobe body 12a, visit the first lobe body 11a and the second lobe body 12a can be under external force mutually near or mutually away from, thereby driving these lens 30a stretches or pushes, when this first lobe body 11a and the second lobe body 12a mutually near the time, the thickness at lens 30a middle part becomes large, it is large that lens curvature becomes.When this first lobe body 11a and the second lobe body 12a mutually away from the time, the less thick at these lens 30a middle part, lens 30a curvature diminishes.So, make this light-emitting diode assembly 100a produce different optical field distribution to adapt to different environment.
Fig. 4 shows the light-emitting diode assembly 100b in third embodiment of the invention, it is similar to the light-emitting diode assembly 100a in the second embodiment, difference is that the first lobe body 11b of the base 10b of this light-emitting diode assembly 100b is provided with a downward first step 111 towards the side of its second lobe body 12b, this the second lobe body 12b is provided with a second step 121 that makes progress towards the side of this first lobe body 11b, when this first lobe body 11b and the second lobe body 12b draw close mutually, just the up and down is stacked with the second step 121 of this second lobe body 12b for the first step 111 of this first lobe body 11b, make this first lobe body 11b and the second lobe body 12b form intermeshing structure.The first electrode 14b of light-emitting diode assembly 100b and the second electrode 15b all are located on this first lobe body 11b, this first electrode 14b and the second electrode 15b space and all extend to this first lobe body 11b lower surface of these lens 30 dorsad from this first lobe body 11b towards the side that the upper surface of these lens 30 extends past this first lobe body 11b.This luminescence chip 20b is a vertical-type chip, and the electrode of the wherein side of this luminescence chip 20b is connected on this first electrode 14b by a wire 16, and the electrode of the upper relative opposite side of this luminescence chip 20b is adhered on this second electrode 15b by electric conducting material.
Please refer to Fig. 5, when this first lobe body 11b and the second lobe body 12b mutually away from the time, still partly the up and down is stacked with the second step 121 of this second lobe body 12b for the first step 111 of this first lobe body 11b, can prevent that so foreign matter from entering the inside of this light-emitting diode assembly 100b from the interval between this first lobe body 11b and the second lobe body 12b.Light-emitting diode assembly 100b in this example, the same with the light-emitting diode assembly 100b in the second implementation column, the first lobe body 11b and the second lobe body 12b can be under external force mutually near or mutually away from, stretch or push thereby drive these lens 30, making this light-emitting diode assembly 100b produce different optical field distribution to adapt to different environment.
To sum up, light-emitting diode assembly 100 in the present invention, 100a, 100b, make its lens 30,30b be out of shape to change curvature by outer masterpiece, thereby make described light-emitting diode assembly 100,100a, 100b produce different optical field distribution, adapt to different environment, with respect to light-emitting diode assembly of the prior art, the light-emitting diode assembly 100 in the present invention, 100a, 100b have better adaptive capacity to environment.
Be noted that above-mentioned execution mode only is better embodiment of the present invention, those skilled in the art also can do other variation in spirit of the present invention.The variation that these are done according to spirit of the present invention is within all should being included in the present invention's scope required for protection.

Claims (10)

1. light-emitting diode assembly, comprise base, be located at the luminescence chip in this base and be located on this base and cover the lens of this luminescence chip, it is characterized in that, these lens are made by elasticity and transparent material, deformation can occur in these lens under external force, to change the curvature of these lens.
2. light-emitting diode assembly as claimed in claim 1, it is characterized in that: lens are made by silica gel or rubber.
3. light-emitting diode assembly as claimed in claim 1, it is characterized in that: when these lens were compressed, the thickness at the middle part of these lens was greater than the thickness at edge, and when these lens were stretched, the thickness at the middle part of these lens was less than the thickness at edge.
4. light-emitting diode assembly as claimed in claim 1, it is characterized in that: these lens are fixed on this base separably, are fixed on this base after these lens are stretched or compressed to formalize.
5. light-emitting diode assembly as claimed in claim 1, it is characterized in that: this base comprises the first lobe body and the second lobe body that is separated from each other, this the first lobe body and the second lobe body lay respectively at the relative both sides of this luminescence chip, the edge of these lens is fixed on this first lobe body and the second lobe body, this first lobe body and the second lobe body can external force mutually near or away from being stretched or compressed with drive lens.
6. light-emitting diode assembly as claimed in claim 5, it is characterized in that: also comprise one first electrode and one second electrode, this first electrode is fixed on this first lobe body, and this second electrode is fixed on this second lobe body, and the two poles of the earth of this chip are connected with this first electrode and the second electrode respectively.
7. light-emitting diode assembly as claimed in claim 6, it is characterized in that: this first electrode runs through this first lobe body, and this second electrode runs through this second lobe body, and this luminescence chip is fixed on the first electrode.
8. light-emitting diode assembly as claimed in claim 5, it is characterized in that: also comprise one first electrode and one second electrode, the first electrode and the second electrode all are located on this first lobe body, this first electrode and the second electrode space and all extend to this first lobe body lower surface of these lens dorsad from this first lobe body towards the side that the upper surface of these lens extends past this first lobe body.
9. light-emitting diode assembly as claimed in claim 8, it is characterized in that: this luminescence chip is a vertical-type chip, this luminescence chip wherein electrode of a side is connected on this first electrode by a wire, and on this luminescence chip, the electrode of relative opposite side is adhered on this second electrode by electric conducting material.
10. light-emitting diode assembly as claimed in claim 5, it is characterized in that: the first lobe body is provided with a downward first step towards a side of the second lobe body, this the second lobe body is provided with a second step that makes progress towards a side of this first lobe body, and the second step of the first step of this first lobe body and this second lobe body has at least a part stacked up and down.
CN2011103782083A 2011-11-24 2011-11-24 Light-emitting diode device Pending CN103137843A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2011103782083A CN103137843A (en) 2011-11-24 2011-11-24 Light-emitting diode device
TW100144264A TWI463704B (en) 2011-11-24 2011-12-01 Light illuminating diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011103782083A CN103137843A (en) 2011-11-24 2011-11-24 Light-emitting diode device

Publications (1)

Publication Number Publication Date
CN103137843A true CN103137843A (en) 2013-06-05

Family

ID=48497398

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011103782083A Pending CN103137843A (en) 2011-11-24 2011-11-24 Light-emitting diode device

Country Status (2)

Country Link
CN (1) CN103137843A (en)
TW (1) TWI463704B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7382976B1 (en) * 2005-09-09 2008-06-03 Avago Technologies Ecb4 Ip Pte Ltd Light source having a variable focal length
CN101793377A (en) * 2009-02-02 2010-08-04 秉津股份有限公司 Light-emitting diode (LED) with deformable lens
US20110241035A1 (en) * 2009-06-24 2011-10-06 Paragon Semiconductor Lighting Technology Co., Ltd. Led package structure for increasing light-emitting efficiency and controlling light-projecting angle and method for manufacturing the same
CN102593312A (en) * 2011-01-14 2012-07-18 隆达电子股份有限公司 Light emitting diode packaging structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100693969B1 (en) * 2003-03-10 2007-03-12 도요다 고세이 가부시키가이샤 Solid element device and method for manufacture thereof
TW200635085A (en) * 2005-01-20 2006-10-01 Barnes Group Inc LED assembly having overmolded lens on treated leadframe and method therefor
JP4953578B2 (en) * 2005-02-18 2012-06-13 日亜化学工業株式会社 Light emitting device
TWI415293B (en) * 2007-12-14 2013-11-11 Advanced Optoelectronic Tech Fabricating method of photoelectric device and packaging structure thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7382976B1 (en) * 2005-09-09 2008-06-03 Avago Technologies Ecb4 Ip Pte Ltd Light source having a variable focal length
CN101793377A (en) * 2009-02-02 2010-08-04 秉津股份有限公司 Light-emitting diode (LED) with deformable lens
US20110241035A1 (en) * 2009-06-24 2011-10-06 Paragon Semiconductor Lighting Technology Co., Ltd. Led package structure for increasing light-emitting efficiency and controlling light-projecting angle and method for manufacturing the same
CN102593312A (en) * 2011-01-14 2012-07-18 隆达电子股份有限公司 Light emitting diode packaging structure

Also Published As

Publication number Publication date
TW201322498A (en) 2013-06-01
TWI463704B (en) 2014-12-01

Similar Documents

Publication Publication Date Title
TWI499031B (en) Light emitting device
CN103123949A (en) Flexible light emitting diode package structure and manufacturing method thereof
CN102956627A (en) LED (Light Emitting Diode) package structure
CN104124318A (en) Light-emitting diode packaging structure and manufacturing method thereof
US20120112237A1 (en) Led package structure
CN102054829A (en) Encapsulation structure of LED
CN1874010A (en) Packaging device for LED in low thermal resistance
US20130009175A1 (en) Vertical stacked light emitting structure
CN103187506B (en) Light-emitting diode assembly
CN103000782A (en) Light emitting diode packaging structure
CN103137843A (en) Light-emitting diode device
US20130009174A1 (en) Vertical stacked light emitting structure
EP2416359A3 (en) Warm white light led lamp with high luminance and high color rendering index
CN103574336A (en) Lighting device capable of changing light shape
US8357951B2 (en) LED chip having first conduction layer surrounding a bottom surface and a circumferential surface of a second conduction layer
US20150069441A1 (en) Light emitting diode package
CN104613386A (en) Cabinet lamp
CN205842255U (en) A kind of modularity radiator structure for LED
EP2312918A1 (en) Illumination Device
CN203165939U (en) Novel paster-type large-power LED (Light-Emitting Diode) support
CN2779425Y (en) Power LED package lens
CN102593312A (en) Light emitting diode packaging structure
CN207663733U (en) A kind of LED light that font is luminous
CN103594588B (en) A kind of light-emitting diode routing electrode
CN207298499U (en) A kind of LED light bar, backlight module, liquid crystal display die set and terminal device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130605