CN102279519A - Three-dimensional micron/nano-structured fluid dielectrophoresis force scanning, embossing and forming method - Google Patents
Three-dimensional micron/nano-structured fluid dielectrophoresis force scanning, embossing and forming method Download PDFInfo
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- CN102279519A CN102279519A CN 201110192995 CN201110192995A CN102279519A CN 102279519 A CN102279519 A CN 102279519A CN 201110192995 CN201110192995 CN 201110192995 CN 201110192995 A CN201110192995 A CN 201110192995A CN 102279519 A CN102279519 A CN 102279519A
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Abstract
The invention relates to a three-dimensional micron/nano-structured fluid dielectrophoresis force scanning, embossing and forming method. The method comprises the steps of: firstly, processing an electrically-conductive die; secondly, spin-coating a glue on the die; thirdly, carrying out filling through scanning of a probe electrode; and finally, transferring a resist, so that three-dimensional-structured micron/nano patterns are obtained. According to the method provided by the invention, a polymer can be filled in different positions of the die with different depths, and a three-dimensional micron/nano structure can be reproduced.
Description
Technical field
The invention belongs to field of micro-Na manufacture, be specifically related to a kind of three-dimensional little/the fluid dielectrophoretic force of micro-nano structure scanning impression manufacturing process.
Technical background
Nanometer embossing is with its high-level efficiency, high precision, advantage is considered to have the photoetching technique of future generation of broad prospect of application cheaply.Nanometer embossing not only has wide application value in integrated circuit manufacturing field, other is little/receive and also have important research and using value in the manufacturing field.Glue is lost in the resistance that traditional nanometer embossing utilizes high-precision template to be pressed into and is coated on the substrate, carries out the demoulding after the resistance erosion adhesive curing and can obtain to hinder erosion glue pattern accordingly with template.Traditional nano impression need make mould be pressed into resistance erosion glue under action of mechanical pressure, and big force of impression may make mould deform influences the complex precision, also can increase the difficulty that multilayer is aimed at, even can make mould or substrate that expendable deformation takes place.And the pattern of resistance erosion glue is once finished in the impression, can't obtain to have the resistance erosion glue pattern of arbitrary height.
The fluid dielectrophoretic force is that this masterpiece is used in liquid-gas interface at the dielectric fluid in electric field, points to gas phase from liquid phase, pulling dielectric fluid and moving.That the fluid dielectrophoretic force can effectively be controlled is little/receive the flowing of fluid, in micro-fluidic, obtained at present to use widely.There are some researches show, utilize dielectrophoretic force to drive prepolymer and fill cavity body of mould, replacing traditional mechanical pressure moulding process, thereby can overcome the drawback that bigger mechanical pressure is brought.
Utilize probe electrode to produce internal field and can produce the fluid dielectrophoretic force in the part, make this part mould cavity obtain filling, and other part cavitys are not aggregated the thing filling on every side, and by the track while scan of controlling probe electrode and the size that applies voltage, can realize the different depth of mould diverse location is filled, with mould and transfer to the cure polymer and the demoulding again on the substrate, can obtain to have the little/micro-nano structure of three-dimensional feature behind the end-of-fill.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of three-dimensional little/the fluid dielectrophoretic force of micro-nano structure scanning impression manufacturing process, make polymkeric substance realize the filling of different depth at the diverse location of mould, can copy three-dimensional little/micro-nano structure.
In order to achieve the above object, the technical scheme taked of the present invention is:
A kind of three-dimensional is little/the fluid dielectrophoretic force scanning impression manufacturing process of micro-nano structure, comprise the following steps:
1) processing conductive die, on silicon chip or quartz, etch and have micron or nano-scale patterns structure, prepare a transparency conducting layer and dielectric layer in the surface of patterning order then, the thickness of transparency conducting layer is 50nm, and the thickness of dielectric layer is 1/10～1/100 of cavity body of mould width, transparency conducting layer is tin indium oxide ITO, dielectric layer is SiO2, when conductive die adopts silicon chip, need not deposit transparency conducting layer again, its dielectric layer obtains by hot oxygen technology
2) even glue on conductive die, spin coating ultraviolet cured adhesive, heat-curable glue or hot melt adhesive on conductive die, the thickness of glue are 2 times of the cavity body of mould degree of depth,
3) probe electrode scanning filling is inserted probe electrode or contact resistance erosion glue film, applies DC voltage between conductive die and probe electrode, voltage swing does not exceed so that dielectric layer is breakdown, traveling probe electrode then, then the scanned mold cavity of probe electrode is known from experience and is aggregated thing and fills into
4) resistance erosion glue shifts, and target substrate is covered on the resistance erosion glued membrane, will hinder the erosion adhesive curing then, curing and demolding, and the micro-/ nano pattern that can obtain having three-dimensional structure, target substrate is silicon or quartz.
Because the present invention has adopted dielectrophoretic force to replace traditional mechanical pressure, this dielectrophoretic force acts on and can drive liquid on the liquid-gas interface and fill in cavity body of mould; Probe electrode is done scanning motion in fluid film, apply different voltage in the motion and can make the cavity body of mould under the scanning pattern obtain the different filling degree of depth, so the structure of manufacturing of the present invention has three-dimensional characteristics.
Description of drawings
Fig. 1 is a conductive die sectional schematic diagram of the present invention.
Fig. 2 is that the present invention is at conductive die surface coating synoptic diagram.
Fig. 3 is that probe electrode of the present invention is at conductive die surface scan synoptic diagram.
Fig. 4 is that target substrate of the present invention covers the synoptic diagram on the polymkeric substance.
Fig. 5 is a polymer cure synoptic diagram of the present invention.
Fig. 6 is the three-dimensional structure sectional schematic diagram after the demoulding of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further details.
A kind of three-dimensional is little/the fluid dielectrophoretic force scanning impression manufacturing process of micro-nano structure, comprise the following steps:
1) processing conductive die, with reference to Fig. 1, on silicon chip 2, etch and have micron or nano-scale patterns structure, obtain the dielectric material silica 1 on its surface through hot oxygen then, perhaps on quartz, etch little/receive patterning, prepare a transparency conducting layer and dielectric layer in the surface of patterning order then, can obtain transparent conductive die, the thickness of bright conductive layer is 50nm, and the thickness of dielectric layer is 1/10～1/100 of cavity body of mould width
2) even glue on conductive die, with reference to Fig. 2, spin coating ultraviolet cured adhesive, heat-curable glue or hot melt adhesive on conductive die form one layer of polymeric film 3, and the thickness of thin polymer film 3 is 2 times of the cavity body of mould degree of depth,
3) probe electrode scanning filling, with reference to Fig. 3, probe electrode 4 is inserted or contact thin polymer film 3, apply DC voltage V at conductive die and 4 of probe electrodes, voltage swing does not exceed so that dielectric layer is breakdown, the traveling probe electrode 4 then, then the scanned mold cavities of probe electrode 4 are known from experience and are aggregated thing film 3 and fill, and it is big more to apply voltage V, and it is big more to fill the degree of depth, can obtain the filling of different depth thus by the size of control voltage V
4) polymkeric substance shifts, with reference to Fig. 4, after scanning filling is finished, remove probe electrode 4, target substrate 5 is covered on the thin polymer film 3,, then thin polymer film 3 is solidified with reference to Fig. 5, curing characteristics according to polymkeric substance, by modes 6 such as UV-irradiation, heating, coolings liquid thin polymer film 3 is solidified, curing and demolding is with reference to Fig. 6, can obtain having the micro-/ nano pattern of three-dimensional structure on target substrate 5, target substrate 5 is silicon or quartz.
Claims (1)
- A three-dimensional little/the fluid dielectrophoretic force scanning impression manufacturing process of micro-nano structure, it is characterized in that, comprise the following steps:1) processing conductive die, on silicon chip or quartz, etch and have micron or nano-scale patterns structure, prepare a transparency conducting layer and dielectric layer in the surface of patterning order then, the thickness of transparency conducting layer is 50nm, and the thickness of dielectric layer is 1/10～1/100 of cavity body of mould width, transparency conducting layer is tin indium oxide ITO, dielectric layer is SiO2, when conductive die adopts silicon chip, need not deposit transparency conducting layer again, its dielectric layer obtains by hot oxygen technology2) even glue on conductive die, spin coating ultraviolet cured adhesive, heat-curable glue or hot melt adhesive on conductive die, the thickness of glue are 2 times of the cavity body of mould degree of depth,3) probe electrode scanning filling is inserted probe electrode or contact resistance erosion glue film, applies DC voltage between conductive die and probe electrode, voltage swing does not exceed so that dielectric layer is breakdown, traveling probe electrode then, then the scanned mold cavity of probe electrode is known from experience and is aggregated thing and fills into4) resistance erosion glue shifts, and target substrate is covered on the resistance erosion glued membrane, will hinder the erosion adhesive curing then, curing and demolding, and the micro-/ nano pattern that can obtain having three-dimensional structure, target substrate is silicon or quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201110192995 CN102279519B (en) | 2011-07-11 | 2011-07-11 | Three-dimensional micron/nano-structured fluid dielectrophoresis force scanning, embossing and forming method |
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| CN 201110192995 CN102279519B (en) | 2011-07-11 | 2011-07-11 | Three-dimensional micron/nano-structured fluid dielectrophoresis force scanning, embossing and forming method |
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| CN102279519A true CN102279519A (en) | 2011-12-14 |
| CN102279519B CN102279519B (en) | 2013-01-02 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102566262A (en) * | 2012-02-29 | 2012-07-11 | 青岛理工大学 | Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate |
| CN104122747A (en) * | 2014-08-08 | 2014-10-29 | 青岛理工大学 | Electroosmosis driving nanoimprint device and working method thereof |
| CN111808533A (en) * | 2020-07-19 | 2020-10-23 | 湖州飞鹿新能源科技有限公司 | Crystalline silicon polishing gel special for Topcon battery and use method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1630120A (en) * | 2003-11-18 | 2005-06-22 | 朗迅科技公司 | Electrowetting battery having a nanostructured electrode surface |
| DE102009059094A1 (en) * | 2009-12-18 | 2011-06-22 | Seereal Technologies S.A. | Controllable spatial light modulator for use in spatial light modulation device of holographic display that is utilized in photo indicator, has field arranged outside optical path, where electrowetting on dielectrics cells are controllable |
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2011
- 2011-07-11 CN CN 201110192995 patent/CN102279519B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1630120A (en) * | 2003-11-18 | 2005-06-22 | 朗迅科技公司 | Electrowetting battery having a nanostructured electrode surface |
| DE102009059094A1 (en) * | 2009-12-18 | 2011-06-22 | Seereal Technologies S.A. | Controllable spatial light modulator for use in spatial light modulation device of holographic display that is utilized in photo indicator, has field arranged outside optical path, where electrowetting on dielectrics cells are controllable |
Non-Patent Citations (2)
| Title |
|---|
| 《Journal of Micromechanics and Microengineering》 20110504 Xiangming Li et al. Fabrication of high-aspect-ratio microstructures using dielectrophoresis-electrocapillary force-driven UV-imprinting 第1-9页 第21卷, * |
| 《纳米技术与精密工程》 20101130 李欣等 电场诱导微结构图形化形成机理及常温制备工艺 第504-509页 第8卷, 第6期 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102566262A (en) * | 2012-02-29 | 2012-07-11 | 青岛理工大学 | Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate |
| CN102566262B (en) * | 2012-02-29 | 2013-06-19 | 青岛理工大学 | Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate |
| CN104122747A (en) * | 2014-08-08 | 2014-10-29 | 青岛理工大学 | Electroosmosis driving nanoimprint device and working method thereof |
| CN111808533A (en) * | 2020-07-19 | 2020-10-23 | 湖州飞鹿新能源科技有限公司 | Crystalline silicon polishing gel special for Topcon battery and use method thereof |
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| CN102279519B (en) | 2013-01-02 |
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